SPB18P06PGATMA1

SPB18P06PGATMA1
Mfr. #:
SPB18P06PGATMA1
制造商:
Infineon Technologies
描述:
MOSFET P-Ch -60V 18.6A D2PAK-2
生命周期:
制造商新产品。
数据表:
SPB18P06PGATMA1 数据表
交货:
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支付:
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HTML Datasheet:
SPB18P06PGATMA1 DatasheetSPB18P06PGATMA1 Datasheet (P4-P6)SPB18P06PGATMA1 Datasheet (P7-P8)
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
TO-263-3
通道数:
1 Channel
晶体管极性:
P-通道
Vds - 漏源击穿电压:
60 V
Id - 连续漏极电流:
18.7 A
Rds On - 漏源电阻:
101 mOhms
Vgs th - 栅源阈值电压:
4 V
Vgs - 栅源电压:
20 V
Qg - 门电荷:
- 28 nC
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
Pd - 功耗:
81.1 W
配置:
单身的
频道模式:
增强
打包:
卷轴
高度:
4.4 mm
长度:
10 mm
系列:
XPB18P06
晶体管类型:
1 P-Channel
宽度:
9.25 mm
品牌:
英飞凌科技
正向跨导 - 最小值:
5 S
秋季时间:
11 ns
产品类别:
MOSFET
上升时间:
5.8 ns
出厂包装数量:
1000
子类别:
MOSFET
典型关断延迟时间:
25 ns
典型的开启延迟时间:
12 ns
第 # 部分别名:
G SP000102181 SPB18P06P SPB18P6PGXT
单位重量:
0.139332 oz
Tags
SPB18P06PG, SPB18P, SPB18, SPB1, SPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ler Electronic
MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity: P Channel; Continuous Drai
***ure Electronics
Single P-Channel 60 V 130 mOhm 21 nC SIPMOS® Power Mosfet - D2PAK
***nell
MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-18.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.101ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:81.1W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
型号 制造商 描述 库存 价格
SPB18P06PGATMA1
DISTI # V72:2272_06384573
Infineon Technologies AGTrans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 1000:$0.4878
  • 500:$0.5168
  • 250:$0.5742
  • 100:$0.6380
  • 25:$0.7977
  • 10:$0.8010
  • 1:$0.9051
SPB18P06PGATMA1
DISTI # SPB18P06PGATMA1CT-ND
Infineon Technologies AGMOSFET P-CH 60V 18.7A TO-263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1955In Stock
  • 500:$0.7565
  • 100:$0.9754
  • 10:$1.2340
  • 1:$1.3900
SPB18P06PGATMA1
DISTI # SPB18P06PGATMA1DKR-ND
Infineon Technologies AGMOSFET P-CH 60V 18.7A TO-263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1955In Stock
  • 500:$0.7565
  • 100:$0.9754
  • 10:$1.2340
  • 1:$1.3900
SPB18P06PGATMA1
DISTI # SPB18P06PGATMA1TR-ND
Infineon Technologies AGMOSFET P-CH 60V 18.7A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 1000:$0.5798
SPB18P06PGATMA1
DISTI # 30205349
Infineon Technologies AGTrans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
10000
  • 1000:$0.5322
SPB18P06PGATMA1
DISTI # 30679613
Infineon Technologies AGTrans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 1000:$0.4878
  • 500:$0.5168
  • 250:$0.5742
  • 100:$0.6380
  • 25:$0.7977
  • 17:$0.8010
SPB18P06P G
DISTI # SPB18P06PGATMA1
Infineon Technologies AGTrans MOSFET P-CH 60V 18.6A 3-Pin TO-263 T/R - Tape and Reel (Alt: SPB18P06PGATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$0.4049
  • 2000:$0.3899
  • 4000:$0.3759
  • 6000:$0.3629
  • 10000:$0.3569
SPB18P06PGATMA1
DISTI # 47W3753
Infineon Technologies AGMOSFET, P CHANNEL, 60V, 18.7A, TO-263,Transistor Polarity:P Channel,Continuous Drain Current Id:-18.7A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.101ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V , RoHS Compliant: Yes110
  • 1:$1.2800
  • 10:$1.0800
  • 100:$0.8320
  • 500:$0.7350
SPB18P06PGATMA1
DISTI # 726-SPB18P06PGATMA1
Infineon Technologies AGMOSFET P-Ch -60V 18.6A D2PAK-2
RoHS: Compliant
1830
  • 1:$1.1600
  • 10:$0.9840
  • 100:$0.7560
  • 500:$0.6680
  • 1000:$0.5280
SPB18P06P G
DISTI # 726-SPB18P06PG
Infineon Technologies AGMOSFET P-Ch -60V 18.6A D2PAK-2
RoHS: Compliant
1373
  • 1:$1.1600
  • 10:$0.9840
  • 100:$0.7560
  • 500:$0.6680
  • 1000:$0.5280
SPB18P06PGATMA1Infineon Technologies AGPower Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
450
  • 1000:$0.5000
  • 500:$0.5300
  • 100:$0.5500
  • 25:$0.5700
  • 1:$0.6200
SPB18P06PGATMA1Infineon Technologies AGSingle P-Channel 60 V 130 mOhm 21 nC SIPMOS Power Mosfet - D2PAK
RoHS: Not Compliant
1000Reel
  • 1000:$0.4500
  • 2000:$0.4350
SPB18P06PGATMA1
DISTI # 7533169P
Infineon Technologies AGMOSFET P-CHANNEL 60V 18.6A SIPMOS TO263, RL695
  • 10:£0.7120
  • 25:£0.6840
  • 50:£0.6560
  • 100:£0.5460
SPB18P06PGATMA1
DISTI # XSFP00000115904
Infineon Technologies AGRISCMicrocontroller,32-Bit,FLASH,CORTEX-M3CPU,48MHz,CMOS, PQFP64
RoHS: Compliant
906
  • 223:$0.6000
  • 906:$0.5625
SPB18P06PGATMA1
DISTI # 2212884
Infineon Technologies AGMOSFET, P-CH, 60V, 18.7A, TO-263
RoHS: Compliant
115
  • 5:£0.7260
  • 25:£0.6690
  • 100:£0.5570
  • 250:£0.5300
  • 500:£0.5030
SPB18P06PGATMA1
DISTI # C1S322000626588
Infineon Technologies AGMOSFETs
RoHS: Compliant
1000
  • 250:$0.5742
  • 100:$0.6380
  • 25:$0.7977
  • 10:$0.8010
SPB18P06PGATMA1
DISTI # C1S322000465871
Infineon Technologies AGMOSFETs
RoHS: Compliant
10000
  • 2000:$0.4910
  • 1000:$0.5930
SPB18P06PGATMA1
DISTI # 2212884
Infineon Technologies AGMOSFET, P-CH, 60V, 18.7A, TO-263
RoHS: Compliant
133
  • 1:$1.8400
  • 10:$1.5600
  • 100:$1.2000
  • 500:$1.0700
  • 1000:$0.8360
图片 型号 描述
BZG03C39-HM3-08

Mfr.#: BZG03C39-HM3-08

OMO.#: OMO-BZG03C39-HM3-08

Zener Diodes Uni-direc 300W Pppm SMA (DO-214AC)
CRCW060310K0FKECC

Mfr.#: CRCW060310K0FKECC

OMO.#: OMO-CRCW060310K0FKECC

Thick Film Resistors - SMD 1/10Watt 10Kohms 1% Commercial Use
CRCW080510R0FKEAC

Mfr.#: CRCW080510R0FKEAC

OMO.#: OMO-CRCW080510R0FKEAC

Thick Film Resistors - SMD 1/8Watt 10ohms 1% Commercial Use
CRCW080510R0FKEAC

Mfr.#: CRCW080510R0FKEAC

OMO.#: OMO-CRCW080510R0FKEAC-VISHAY-DALE

D12/CRCW0805-C 100 10R 1% ET1
CRCW060375R0FKEAC

Mfr.#: CRCW060375R0FKEAC

OMO.#: OMO-CRCW060375R0FKEAC-VISHAY-DALE

D11/CRCW0603-C 100 75R 1% ET1
CRCW0603100RFKEAC

Mfr.#: CRCW0603100RFKEAC

OMO.#: OMO-CRCW0603100RFKEAC-VISHAY-DALE

D11/CRCW0603-C 100 100R 1% ET1
BZG03C39-HM3-08

Mfr.#: BZG03C39-HM3-08

OMO.#: OMO-BZG03C39-HM3-08-VISHAY

DIODE ZENER 39V 1.25W DO214AC
CRCW060347K0FKEAC

Mfr.#: CRCW060347K0FKEAC

OMO.#: OMO-CRCW060347K0FKEAC-VISHAY-DALE

D11/CRCW0603-C 100 47K 1% ET1
C0603C104K5RECAUTO

Mfr.#: C0603C104K5RECAUTO

OMO.#: OMO-C0603C104K5RECAUTO-KEMET

Cap Ceramic 0.1uF 50V X7R 10% Pad SMD 0603 125C Automotive T/R
可用性
库存:
Available
订购:
1984
输入数量:
SPB18P06PGATMA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$1.15
US$1.15
10
US$0.98
US$9.84
100
US$0.76
US$75.60
500
US$0.67
US$334.00
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