IRF1503PBF

IRF1503PBF
Mfr. #:
IRF1503PBF
制造商:
Infineon Technologies
描述:
MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
生命周期:
制造商新产品。
数据表:
IRF1503PBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF1503PBF DatasheetIRF1503PBF Datasheet (P4-P6)IRF1503PBF Datasheet (P7-P9)
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
通孔
包装/案例:
TO-220-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
30 V
Id - 连续漏极电流:
240 A
Rds On - 漏源电阻:
3.3 mOhms
Vgs - 栅源电压:
20 V
Qg - 门电荷:
130 nC
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
Pd - 功耗:
330 W
配置:
单身的
频道模式:
增强
打包:
管子
高度:
15.65 mm
长度:
10 mm
晶体管类型:
1 N-Channel
类型:
汽车MOSFET
宽度:
4.4 mm
品牌:
英飞凌科技
秋季时间:
48 ns
产品类别:
MOSFET
上升时间:
130 ns
出厂包装数量:
1000
子类别:
MOSFET
典型关断延迟时间:
59 ns
典型的开启延迟时间:
17 ns
第 # 部分别名:
SP001561384
单位重量:
0.211644 oz
Tags
IRF1503, IRF150, IRF15, IRF1, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 240A;TO-220AB;PD 330W;-55de
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***et
Trans MOSFET N-CH 30V 240A 3-Pin(3+Tab) TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 30V, 240A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:240A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:75A; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:3.3ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:960A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
型号 制造商 描述 库存 价格
IRF1503PBF
DISTI # IRF1503PBF-ND
Infineon Technologies AGMOSFET N-CH 30V 75A TO-220AB
RoHS: Compliant
Min Qty: 3000
Container: Tube
Temporarily Out of Stock
  • 3000:$1.5874
IRF1503PBF
DISTI # 32628576
Infineon Technologies AGTrans MOSFET N-CH Si 30V 240A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
19000
  • 3000:$1.4756
IRF1503PBF
DISTI # IRF1503PBF
Infineon Technologies AGTrans MOSFET N-CH 30V 240A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF1503PBF)
RoHS: Compliant
Min Qty: 3000
Container: Tube
Americas - 0
  • 3000:$1.1900
  • 5000:$1.1900
  • 8000:$1.0900
  • 15000:$1.0900
  • 30000:$1.0900
IRF1503PBF
DISTI # 70016944
Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 2.6 Milliohms,ID 240A,TO-220AB,PD 330W,-55de
RoHS: Compliant
0
  • 3000:$3.7600
  • 6000:$3.6850
  • 15000:$3.5720
  • 30000:$3.4220
  • 75000:$3.1960
IRF1503PBF
DISTI # 942-IRF1503PBF
Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
RoHS: Compliant
0
  • 3000:$1.8000
IRF1503PBFInternational RectifierPOWER FIELD-EFFECT TRANSISTOR, 75A I(D), 30V, 0.0033OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB35
  • 30:$2.3588
  • 9:$2.5947
  • 1:$3.5382
IRF1503PBF
DISTI # IRF1503PBF
Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,240A,330W,TO220AB103
  • 1:$2.3500
  • 3:$2.1500
  • 10:$1.8200
  • 100:$1.5900
IRF1503PBFInternational Rectifier 
RoHS: Compliant
Europe - 220
    IRF1503PBF
    DISTI # XSKDRABV0021334
    Infineon Technologies AGPowerField-EffectTransistor,100AI(D),40V,0.009ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-220AB
    RoHS: Compliant
    1985 in Stock0 on Order
    • 1985:$2.0640
    • 400:$2.2080
    IRF1503PBF
    DISTI # 8657440
    Infineon Technologies AG 
    RoHS: Compliant
    0
    • 1000:$3.0600
    • 500:$3.2900
    • 250:$3.7100
    • 100:$4.1600
    • 10:$5.1300
    • 1:$6.2300
    图片 型号 描述
    IRF150P220XKMA1

    Mfr.#: IRF150P220XKMA1

    OMO.#: OMO-IRF150P220XKMA1

    MOSFET TRENCH_MOSFETS
    IRF150P221XKMA1

    Mfr.#: IRF150P221XKMA1

    OMO.#: OMO-IRF150P221XKMA1

    MOSFET TRENCH_MOSFETS
    IRF150P220XKMA1

    Mfr.#: IRF150P220XKMA1

    OMO.#: OMO-IRF150P220XKMA1-1190

    TRENCH_MOSFETS - Rail/Tube (Alt: IRF150P220XKMA1)
    IRF1503LPBF

    Mfr.#: IRF1503LPBF

    OMO.#: OMO-IRF1503LPBF-INFINEON-TECHNOLOGIES

    MOSFET N-CH 30V 75A TO-262
    IRF1503PBF,IRF1503

    Mfr.#: IRF1503PBF,IRF1503

    OMO.#: OMO-IRF1503PBF-IRF1503-1190

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    IRF1503STRPBF

    Mfr.#: IRF1503STRPBF

    OMO.#: OMO-IRF1503STRPBF-1190

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    Mfr.#: IRF150CECC

    OMO.#: OMO-IRF150CECC-1190

    全新原装
    IRF150M

    Mfr.#: IRF150M

    OMO.#: OMO-IRF150M-1190

    全新原装
    IRF150N

    Mfr.#: IRF150N

    OMO.#: OMO-IRF150N-1190

    全新原装
    IRF151

    Mfr.#: IRF151

    OMO.#: OMO-IRF151-1190

    Power Field-Effect Transistor, 40A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
    可用性
    库存:
    Available
    订购:
    5000
    输入数量:
    IRF1503PBF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    3000
    US$1.80
    US$5 400.00
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