S25FL512SAGMFVR10

S25FL512SAGMFVR10
Mfr. #:
S25FL512SAGMFVR10
制造商:
Cypress Semiconductor
描述:
Flash Memory 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN TRAY PACKING, RESET# + VIO
生命周期:
制造商新产品。
数据表:
S25FL512SAGMFVR10 数据表
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ECAD Model:
更多信息:
S25FL512SAGMFVR10 更多信息 S25FL512SAGMFVR10 Product Details
产品属性
属性值
制造商
跨度
产品分类
记忆
系列
FL-S
打包
托盘替代包装
安装方式
贴片/贴片
工作温度范围
- 40 C to + 105 C
包装盒
SO-16
工作温度
-40°C ~ 105°C (TA)
界面
SPI 串行
电压供应
2.7 V ~ 3.6 V
供应商-设备-包
16-SOIC
内存大小
512M (64M x 8)
内存型
闪存 - NOR
速度
133MHz
建筑学
MirrorBit Eclipse
格式化内存
闪光
标准
通用闪存接口 (CFI)
接口类型
SPI
组织
64 M x 8
电源电流最大值
100 mA
数据总线宽度
8 bit
最大电源电压
3.6 V
电源电压最小值
2.7 V
最大时钟频率
133 MHz
时序型
异步
Tags
S25FL512SAGMFVR, S25FL512SAGMFV, S25FL512SAGM, S25FL512SAG, S25FL512SA, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Serial NOR Flash Memory, 512 Mbit Density, SOIC-16, RoHS
***ical
NOR Flash Parallel/Serial 3V/3.3V 512M-bit 8ns Automotive 16-Pin SOIC W Tray
***ark
TRAY PKGED / 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN TRAY PACKING, RESET# + VIO
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
型号 制造商 描述 库存 价格
S25FL512SAGMFVR10
DISTI # S25FL512SAGMFVR10-ND
Cypress SemiconductorIC FLASH 512M SPI 133MHZ 16SOIC
RoHS: Compliant
Min Qty: 240
Container: Tray
Temporarily Out of Stock
  • 240:$7.1041
S25FL512SAGMFVR10
DISTI # 727-S25FL512SAGMFVR0
Cypress SemiconductorNOR Flash Nor
RoHS: Compliant
239
  • 1:$10.7100
  • 10:$9.8100
  • 25:$8.9200
  • 50:$8.5000
  • 100:$8.0300
S25FL512SAGMFVR10Spansion 
RoHS: Not Compliant
415
  • 1000:$6.7500
  • 500:$7.1100
  • 100:$7.4000
  • 25:$7.7100
  • 1:$8.3100
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S25FL512SAGMFMG10

Mfr.#: S25FL512SAGMFMG10

OMO.#: OMO-S25FL512SAGMFMG10-CYPRESS-SEMICONDUCTOR

IC FLASH 512M SPI 133MHZ 16SO
S25FL512SAGBHVB13

Mfr.#: S25FL512SAGBHVB13

OMO.#: OMO-S25FL512SAGBHVB13-CYPRESS-SEMICONDUCTOR

IC FLASH 512M SPI 133MHZ 24BGA FL-S
S25FL512SDSMFV013

Mfr.#: S25FL512SDSMFV013

OMO.#: OMO-S25FL512SDSMFV013-CYPRESS-SEMICONDUCTOR

Flash Memory 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN TAPE & REEL PACKING
S25FL512SDPBHIC13

Mfr.#: S25FL512SDPBHIC13

OMO.#: OMO-S25FL512SDPBHIC13-CYPRESS-SEMICONDUCTOR

IC FLASH 512M SPI 66MHZ 24BGA FL-S
S25FL512SDPMFV010

Mfr.#: S25FL512SDPMFV010

OMO.#: OMO-S25FL512SDPMFV010-CYPRESS-SEMICONDUCTOR

Flash Memory 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN TRAY PACKING
S25FL512SDPBHV210

Mfr.#: S25FL512SDPBHV210

OMO.#: OMO-S25FL512SDPBHV210-CYPRESS-SEMICONDUCTOR

IC FLASH 512M SPI 66MHZ 24BGA FL-S
S25FL512SAGBHIC13

Mfr.#: S25FL512SAGBHIC13

OMO.#: OMO-S25FL512SAGBHIC13-CYPRESS-SEMICONDUCTOR

IC FLASH 512M SPI 133MHZ 24BGA FL-S
可用性
库存:
Available
订购:
3500
输入数量:
S25FL512SAGMFVR10的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$10.12
US$10.12
10
US$9.62
US$96.19
100
US$9.11
US$911.25
500
US$8.61
US$4 303.15
1000
US$8.10
US$8 100.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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