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IRF9Z34NLPBF

IRF9Z34NLPBF
Mfr. #:
IRF9Z34NLPBF
制造商:
Infineon Technologies
描述:
Darlington Transistors MOSFET MOSFT PCh -55V -19A 100mOhm 23.3nC
生命周期:
制造商新产品。
数据表:
IRF9Z34NLPBF 数据表
交货:
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ECAD Model:
产品属性
属性值
制造商
红外线
产品分类
FET - 单
打包
管子
单位重量
0.084199 oz
安装方式
通孔
包装盒
I2PAK-3
技术
硅
通道数
1 Channel
晶体管型
1 P-Channel
钯功耗
68 W
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
- 19 A
Vds-漏-源-击穿电压
- 55 V
Rds-On-Drain-Source-Resistance
100 mOhms
晶体管极性
P-通道
Qg-门电荷
23.3 nC
Tags
IRF9Z34N, IRF9Z34, IRF9Z3, IRF9Z, IRF9, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
IRF9Z34NLPBF P-channel MOSFET Transistor, 14 A, 55 V, 3-Pin TO-262
***ernational Rectifier
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
***ical
Trans MOSFET P-CH 55V 19A 3-Pin(3+Tab) TO-262
***Components
MOSFET P-CHANNEL HEXFET 55V 19A TO262
***i-Key
MOSFET P-CH 55V 19A TO-262
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:-19A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. P CHANNEL MOSFET, -55V, 19A, TO-262; Tra; P CHANNEL MOSFET, -55V, 19A, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:-19A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; MSL:-
***nell
MOSFET, CA-P, -55V, -19A, TO-262-3; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-19A; Tensione Drain Source Vds:-55V; Resistenza di Attivazione Rds(on):0.1ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-4V; Dissipazione di Potenza Pd:68W; Modello Case Transistor:TO-262; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HEXFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 4 - 72 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
型号 制造商 描述 库存 价格
IRF9Z34NLPBF
DISTI # V99:2348_13889926		Infineon Technologies AGTrans MOSFET P-CH 55V 19A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		639
  • 100:$0.9713
  • 25:$1.0502
  • 10:$1.1822
  • 1:$1.3531
IRF9Z34NLPBF
DISTI # IRF9Z34NLPBF-ND		Infineon Technologies AGMOSFET P-CH 55V 19A TO-262
RoHS: Compliant
Min Qty: 650
Container: Tube		Limited Supply - Call
    IRF9Z34NLPBF
    DISTI # 26198084    		Infineon Technologies AGTrans MOSFET P-CH 55V 19A 3-Pin(3+Tab) TO-262 Tube
    RoHS: Compliant    		639
    • 100:$0.9728
    • 25:$1.0537
    • 11:$1.1888
    IRF9Z34NLPBF
    DISTI # 19K8339    		Infineon Technologies AGP CHANNEL MOSFET, -55V, 19A, TO-262,Transistor Polarity:P Channel,Continuous Drain Current Id:-19A,Drain Source Voltage Vds:-55V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4V,MSL:- RoHS Compliant: Yes0
      IRF9Z34NLPBF
      DISTI # 942-IRF9Z34NLPBF      		Infineon Technologies AGMOSFET MOSFT PCh -55V -19A 100mOhm 23.3nC
      RoHS: Compliant      		0
        IRF9Z34NLPBF
        DISTI # IRF9Z34NLPBF        		Infineon Technologies AGTransistor: P-MOSFET,unipolar,-55V,-19A,68W,TO26247
        • 1:$0.9700
        • 3:$0.8400
        • 10:$0.7900
        • 100:$0.7300
        IRF9Z34NLPBFInternational Rectifier 
        RoHS: Compliant        		Europe - 700
          IRF9Z34NLPBF
          DISTI # C1S322000488094          		Infineon Technologies AGMOSFETs
          RoHS: Compliant          		639
          • 100:$0.9728
          • 25:$1.0537
          • 10:$1.1888
          IRF9Z34NLPBF
          DISTI # 2576890          		Infineon Technologies AGMOSFET, P-CH, -55V, -19A, TO-262-3
          RoHS: Compliant          		0
          • 1:$2.6100
          • 10:$2.1800
          • 100:$1.6700
          • 250:$1.4200
          • 500:$1.2300
          • 1000:$1.1700
          IRF9Z34NLPBF.
          DISTI # 1162958          		Infineon Technologies AGP CHANNEL MOSFET, -55V, 19A, TO-262
          RoHS: Compliant          		0
          • 1:$2.9700
          • 10:$2.4600
          • 100:$1.9200
          • 500:$1.6200
          • 1000:$1.4200
          • 2500:$1.3200
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          Mfr.#: IRF9Z34STRRPBF

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          IRF9Z34NSPBF

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          		 MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC
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          OMO.#: OMO-IRF9Z34N-1190

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          IRF9Z34NPBF C

          Mfr.#: IRF9Z34NPBF C

          OMO.#: OMO-IRF9Z34NPBF-C-1190

          		 全新原装
          IRF9Z34NPBF-M

          Mfr.#: IRF9Z34NPBF-M

          OMO.#: OMO-IRF9Z34NPBF-M-1190

          		 全新原装
          IRF9Z34NSPBF

          Mfr.#: IRF9Z34NSPBF

          OMO.#: OMO-IRF9Z34NSPBF-INFINEON-TECHNOLOGIES

          		 Darlington Transistors MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC
          可用性
          库存:
          Available
          订购:
          3000
          输入数量:
          IRF9Z34NLPBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
          参考价格（美元）
          数量
          单价
          小计金额
          1
          US$1.08
          US$1.08
          10
          US$1.03
          US$10.26
          100
          US$0.97
          US$97.20
          500
          US$0.92
          US$459.00
          1000
          US$0.86
          US$864.00
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