PMGD8000LN

Mfr. #:: PMGD8000LN
制造商:: nxp
描述:
生命周期:: 制造商新产品。
数据表:: PMGD8000LN 数据表
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产品属性
属性值

制造商: 恩智浦

产品分类: FET - 阵列

Tags: PMGD8, PMGD, PMG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PMGD8000LN 描述

***ark: MOSFET, DUAL, NN, SOT-363; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:0.125A; Resistance, Rds On:8ohm; Voltage, Vgs Rds on Measurement:4V; Voltage, Vgs th Typ:1.5V; Case Style:SOT-363; ;RoHS Compliant: Yes

***nell: MOSFET, DUAL, NN, SOT-363; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:0.125A; Resistance, Rds On:8ohm; Voltage, Vgs Rds on Measurement:4V; Voltage, Vgs th Typ:1.5V; Case Style:SOT-363; Termination Type:SMD; Current, Idm Pulse:0.25A; No. of Pins:6; Power Dissipation:0.2W; Power, Pd:0.2W; Resistance, Rds on Max:8ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:7ns; Time, Rise:7ns; Time, t Off:15ns; Time, t On:10ns; Transistors, No. of:2; Voltage, Vds Max:30V; Voltage, Vgs th Max:1.5V

***ment14 APAC: MOSFET, DUAL, NN, SOT-363; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:125mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:4V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:200mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:125mA; Current Temperature:25°C; Fall Time tf:7ns; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance Max:8ohm; Package / Case:SOT-363; Power Dissipation Pd:200mW; Power Dissipation Pd:200mW; Pulse Current Idm:250mA; Rise Time:7ns; Termination Type:SMD; Turn Off Time:15ns; Turn On Time:10ns; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:4V; Voltage Vgs th Max:1.5V

Market price

型号	制造商	描述	库存	价格
PMGD8000LN,115 DISTI # C1S537100167091	NXP Semiconductors	Trans MOSFET N-CH 30V 0.125A 6-Pin TSSOP T/R RoHS: Compliant	12	10:$0.2570
PMGD8000LN,115 DISTI # 568-2370-2-ND	NXP Semiconductors	MOSFET 2N-CH 30V 0.125A 6TSSOP RoHS: Compliant Min Qty: 9000 Container: Tape & Reel (TR)	Limited Supply - Call
PMGD8000LN,115 DISTI # 568-2370-1-ND	NXP Semiconductors	MOSFET 2N-CH 30V 0.125A 6TSSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
PMGD8000LN,115 DISTI # 568-2370-6-ND	NXP Semiconductors	MOSFET 2N-CH 30V 0.125A 6TSSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
PMGD8000LN115	NXP Semiconductors	Small Signal Field-Effect Transistor, 0.125A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	27664	1000:$0.1500 100:$0.1600 500:$0.1600 25:$0.1700 1:$0.1800
PMGD8000LN,115 DISTI # 771-PMGD8000LN-T/R	Nexperia	MOSFET N-CH TRENCH DL 30V RoHS: Compliant	0

图片	型号	描述
	Mfr.#: PMGD8000LN OMO.#: OMO-PMGD8000LN-1190	全新原装
	Mfr.#: PMGD8000LN , HSMP-3812-T OMO.#: OMO-PMGD8000LN-HSMP-3812-T-1190	全新原装
	Mfr.#: PMGD8000LN,115 OMO.#: OMO-PMGD8000LN-115-NXP-SEMICONDUCTORS	MOSFET 2N-CH 30V 0.125A 6TSSOP
	Mfr.#: PMGD8000LN115 OMO.#: OMO-PMGD8000LN115-1190	Trans MOSFET N-CH 30V 0.125A 6-Pin TSSOP T/R - Bulk (Alt: PMGD8000LN115)

PMGD8000LN

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes