SIZ730DT-T1-GE3

Name: Vishay - SIZ730DT-T1-GE3
Brand: Vishay
SKU: OMO-4657213
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIZ730DT-T1-GE3
制造商:: Vishay
描述:: MOSFET 2N-CH 30V 16A 6-POWERPAIR
生命周期:: 制造商新产品。
数据表:: SIZ730DT-T1-GE3 数据表
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ECAD Model:

产品属性
属性值

制造商: 威世硅

产品分类: FET - 阵列

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SIZ730DT-GE3

安装方式: 贴片/贴片

包装盒: 6-PowerPair

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: 6-PowerPair

配置: 双重的

FET型: 2 N-Channel (Half Bridge)

最大功率: 27W, 48W

晶体管型: 2 N-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: 830pF @ 15V

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 16A, 35A

Rds-On-Max-Id-Vgs: 9.3 mOhm @ 15A, 10V

Vgs-th-Max-Id: 2.2V @ 250μA

栅极电荷-Qg-Vgs: 24nC @ 10V

钯功耗: 3.9 W 4.6 W

秋季时间: 7 ns 10 ns

上升时间: 15 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 12.9 A

Vds-漏-源-击穿电压: 30 V

VGS-th-Gate-Source-Threshold-Voltage: 2.2 V

Rds-On-Drain-Source-Resistance: 7.5 mOhms 3.2 mOhms

晶体管极性: N通道

Qg-门电荷: 15.6 nC 43 nC

正向跨导最小值: 48 S 80 S

Tags: SIZ7, SiZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIZ730DT-T1-GE3 描述

***ureElectronics: DualNChannel30V0013Ohm1232nC3946WSiliconMosfetPOWERPAIR6x37

***ical: TransMOSFETNCH30V129A264A6PinPowerPAIRTR

***ment14APAC: MOSFETDUALNCH30V16A35APOWERPA

***iKey: MOSFET2NCH30V16A6POWERPAIR

***S: MOSFETNCH30VDSPOWERPAIRSMD

***nell: DUALNCHPOWERPAIR30V9339MOHM

***ark: MOSFETDUALNCH30V16A35APOWERPAIR;TransistorPolarityNChannel;RdsonTestVoltageVgs10V;PowerDissipationPd48W;OperatingTemperatureRange55Cto150C;NoofPins6;ContinuousDrainCurrentIdNChannel35A;RoHSCompliantYes

Market price

型号	制造商	描述	库存	价格
SIZ730DT-T1-GE3 DISTI # SIZ730DT-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 16A 6-POWERPAIR Min Qty: 1 Container: Cut Tape (CT)	2994In Stock	1000:$0.5715 500:$0.5798 100:$0.6174 10:$0.7050 1:$0.8600
SIZ730DT-T1-GE3 DISTI # SIZ730DT-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 16A 6-POWERPAIR Min Qty: 1 Container: Digi-Reel®	2994In Stock	1000:$0.6257 500:$0.7926 100:$0.9594 10:$1.2310 1:$1.3800
SIZ730DT-T1-GE3 DISTI # SIZ730DT-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 16A 6-POWERPAIR Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SIZ730DT-T1-GE3 DISTI # 65T1677	Vishay Intertechnologies	MOSFET, DUAL N-CH, 30V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes RoHS: Compliant	0
SIZ730DT-T1-GE3 DISTI # 83T3537	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 30V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0075ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes RoHS: Compliant	0
SIZ730DT-T1-GE3 DISTI # 781-SIZ730DT-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 3.7 RoHS: Compliant	0
SIZ730DT-T1-GE3 DISTI # 2400401	Vishay Intertechnologies	MOSFET, 2 N CH, 30V, 16A, POWERPAIR-8 RoHS: Compliant	0	9000:$0.7810 6000:$0.8110 3000:$0.8530 1000:$0.9150 500:$1.1600 100:$1.3500 10:$1.7500 1:$2.1200
SIZ730DT-T1-GE3 DISTI # 2400401	Vishay Intertechnologies	MOSFET, 2 N CH, 30V, 16A, POWERPAIR-8 RoHS: Compliant	0	250:£0.2600 100:£0.2820 25:£0.3140 5:£0.3790

SIZ730DT-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes