CSD19505KTTT

Mfr. #:: CSD19505KTTT
描述:: MOSFET N-CH 80V 200A DDPAK-3
生命周期:: 制造商新产品。
数据表:: CSD19505KTTT 数据表
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更多信息:: CSD19505KTTT 更多信息 CSD19505KTTT Product Details

产品属性
属性值

制造商: 德州仪器

产品分类: 晶体管 - FET、MOSFET - 单

RoHS: 不

安装方式: 贴片/贴片

包装/箱: TO-263-3

通道数: 1 Channel

晶体管极性: N通道

Vds - 漏源击穿电压: 80 V

Id - 连续漏极电流: 200 A

Rds On - 漏源电阻: 2.6 mOhms

Vgs - 栅源电压: + / - 20 V

Vgs th - 栅源阈值电压: 2.6 V

Qg - 栅极电荷: 76 nC

最高工作温度: + 175 C

技术: -

打包: 卷轴

频道模式: 增强

品牌: 德州仪器

配置: 单身的

秋季时间: 3 ns

正向跨导 - 最小值: 262 S

最低工作温度: - 55 C

Pd - 功耗: 300 W

上升时间: 5 ns

系列: CSD19505KTT

晶体管类型: 1 N-Channel

典型关断延迟时间: 22 ns

典型开启延迟时间: 11 ns

Tags: CSD19505, CSD1950, CSD19, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD19505KTTT 描述

***as Instruments: 80-V, N channel NexFET™ power MOSFET, single D2PAK, 3.1 mOhm 3-DDPAK/TO-263 -55 to 175

***ow.cn: Trans MOSFET N-CH Si 80V 200A 4-Pin(3+Tab) TO-263 T/R

***ark: Small Reel Version Of Csd19505ktt

***i-Key Marketplace: CSD19505KTT 80V, N CHANNEL NEXFE

CSD19505KTTT 更多信息

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

型号	描述	库存	价格
CSD19505KTTT DISTI # V72:2272_14839656	Trans MOSFET N-CH Si 80V 200A 4-Pin(3+Tab) TO-263 T/R	200	1:$1.4239
CSD19505KTTT DISTI # V39:1801_14839656	Trans MOSFET N-CH Si 80V 200A 4-Pin(3+Tab) TO-263 T/R	0
CSD19505KTTT DISTI # CSD19505KTTT-ND	MOSFET N-CH 80V 200A DDPAK-3 RoHS: Compliant Min Qty: 200 Container: Tape & Reel (TR)	Temporarily Out of Stock	200:$2.8618
CSD19505KTTT DISTI # 26743160	Trans MOSFET N-CH Si 80V 200A 4-Pin(3+Tab) TO-263 T/R	200	4:$1.4239
CSD19505KTTT DISTI # CSD19505KTTT	Trans MOSFET N-CH 80V 200A 3-Pin TO-263 T/R - Tape and Reel (Alt: CSD19505KTTT) RoHS: Compliant Min Qty: 200 Container: Reel	Americas - 0	2000:$1.6900 600:$1.7900 1000:$1.7900 400:$1.8900 200:$1.9900
CSD19505KTT DISTI # 595-CSD19505KTT	MOSFET 80V, N-Channel NexFET Power Mosfet RoHS: Compliant	930	1:$3.3100 10:$2.9700 100:$2.4300 250:$2.2800 500:$2.0700 1000:$1.7500 2500:$1.6600 5000:$1.6000
CSD19505KTTT DISTI # 595-CSD19505KTTT	MOSFET SMALL REEL VERSION OF CSD19505KTT RoHS: Not compliant	0	1:$3.7000 10:$3.3200 50:$3.3200 100:$2.7200 250:$2.5500 500:$2.3100 1000:$1.9500 2500:$1.8500
CSD19505KTTT	Power Field-Effect Transistor, 200A I(D), 80V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	1200	1000:$1.6700 500:$1.7600 100:$1.8300 25:$1.9100 1:$2.0600

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