HGTG30N60B3D

Mfr. #:: HGTG30N60B3D
制造商:: ON Semiconductor
描述:: IGBT 600V 60A 208W TO247
生命周期:: 制造商新产品。
数据表:: HGTG30N60B3D 数据表
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产品属性
属性值

制造商: 仙童半导体

产品分类: IGBT - 单

系列: -

打包: 管子

部分别名: HGTG30N60B3D_NL

单位重量: 0.225401 oz

安装方式: 通孔

包装盒: TO-247-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-247

配置: 单身的

最大功率: 208W

反向恢复时间trr: 55ns

电流收集器 Ic-Max: 60A

电压收集器发射极击穿最大值: 600V

IGBT型: -

电流收集器脉冲Icm: 220A

Vce-on-Max-Vge-Ic: 1.9V @ 15V, 30A

开关能源: 550μJ (on), 680μJ (off)

栅极电荷: 170nC

Td-on-off-25°C: 36ns/137ns

测试条件: 480V, 30A, 3 Ohm, 15V

钯功耗: 208 W

最高工作温度: + 150 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 600 V

集电极-发射极-饱和-电压: 1.45 V

25-C 时的连续集电极电流: 60 A

栅极-发射极-漏电流: +/- 250 nA

最大栅极发射极电压: +/- 20 V

连续集电极电流 Ic-Max: 60 A

Tags: HGTG30N60B3D, HGTG30N60B3, HGTG30N60B, HGTG30N60, HGTG30N6, HGTG30N, HGTG30, HGTG3, HGTG, HGT

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HGTG30N60B3D 描述

***ark: IGBT Single Transistor, 60 A, 1.9 V, 208 W, 600 V, TO-247, 3 RoHS Compliant: Yes

***ical: Trans IGBT Chip N=-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Rail

***inecomponents.com: 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast

***et: 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST

***p One Stop Japan: Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail

***ure Electronics: HGTG30N60B3D Series 600 V 60 A Flange Mount UFS N-Channel IGBT-TO-247

***ser: IGBTs 600V, IGBT UFS N-Channel

***i-Key: IGBT N-CH UFS 600V 30A TO-247

***trelec: IGBT Housing type: TO-247 Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.1 V Current release time: 200 ns Power dissipation: 208 W

***Semiconductor: 600V, PT IGBT

***ment14 APAC: Prices include import duty and tax. IGBT,N CH,600V,30A,TO-247; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:208W; Transistor Type:IGBT

***nell: IGBT,N CH,600V,30A,TO-247; Corrente di Collettore CC:60A; Tensione Saturaz Collettore-Emettitore Vce(on):1.9V; Dissipazione di Potenza Pd:208W; Tensione Collettore-Emettitore V(br)ceo:600V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018); Dissipazione di Potenza Max:208W; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tipo di Transistor:IGBT

***rchild Semiconductor: The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.

Market price

型号	制造商	描述	库存	价格
HGTG30N60B3D DISTI # V99:2348_06359031	ON Semiconductor	PTPIGBT TO247 60A 600V	204	500:$4.0640 250:$4.2640 100:$4.6150 25:$5.1460 10:$5.4660 1:$5.9900
HGTG30N60B3D DISTI # HGTG30N60B3D-ND	ON Semiconductor	IGBT 600V 60A 208W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	1604In Stock	900:$4.4340 450:$4.8630 10:$6.1500 1:$6.8100
HGTG30N60B3D DISTI # 26882380	ON Semiconductor	PTPIGBT TO247 60A 600V	204	500:$4.0640 250:$4.2640 100:$4.6150 25:$5.1460 10:$5.4660 2:$5.9900
HGTG30N60B3D DISTI # 30618810	ON Semiconductor	PTPIGBT TO247 60A 600V	58	50:$4.4752 10:$4.7940 4:$6.6045
HGTG30N60B3D DISTI # HGTG30N60B3D	ON Semiconductor	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG30N60B3D) RoHS: Compliant Min Qty: 1	Europe - 0	1:€3.7900 10:€3.4900 25:€3.2900 50:€3.1900 100:€3.0900 500:€2.9900 1000:€2.7900
HGTG30N60B3D DISTI # HGTG30N60B3D	ON Semiconductor	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG30N60B3D) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$4.4900 900:$4.3900 1800:$4.3900 2700:$4.2900 4500:$4.1900
HGTG30N60B3D DISTI # 58K1592	ON Semiconductor	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1592) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$6.4900 10:$5.8600 25:$5.5900 50:$5.2200 100:$4.8500 250:$4.6400
HGTG30N60B3D DISTI # 58K1592	ON Semiconductor	SINGLE IGBT, 600V, 60A,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.45V,Power Dissipation Pd:208W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	456	250:$4.8700 100:$5.0800 50:$5.4500 25:$5.8200 10:$6.0900 1:$6.7200
HGTG30N60B3D DISTI # 512-HGTG30N60B3D	ON Semiconductor	IGBT Transistors 600V IGBT UFS N-Channel RoHS: Compliant	414	1:$6.4800 10:$5.8500 25:$5.5800 100:$4.8500 250:$4.6300 500:$4.2200
HGTG30N60B3D_Q DISTI # 512-HGTG30N60B3D_Q	ON Semiconductor	IGBT Transistors 600V IGBT UFS N-Channel RoHS: Not compliant	0
HGTG30N60B3D	Fairchild Semiconductor Corporation	RoHS: Not Compliant	16000	1000:$5.0400 500:$5.3100 100:$5.5200 25:$5.7600 1:$6.2000
HGTG30N60B3D	Fairchild Semiconductor Corporation		30
HGTG30N60B3D_R4731	Fairchild Semiconductor Corporation		5
HGTG30N60B3D	Fairchild Semiconductor Corporation	60 A, 600 V, N-CHANNEL IGBT, TO-247	3	2:$5.4000 1:$8.1000
HGTG30N60B3D DISTI # HGTG30N60B3D	ON Semiconductor	Transistor: IGBT,600V,30A,208W,TO247	256	1:$6.5700 3:$5.9700 10:$4.9600 30:$4.3400 120:$3.9400
HGTG30N60B3D.. DISTI # 1838984	ON Semiconductor	IGBT,N CH,600V,30A,TO-247 RoHS: Compliant	676	100:£3.9100 50:£4.2200 10:£4.5100 5:£5.2300 1:£6.0700
HGTG30N60B3D.. DISTI # 1838984	ON Semiconductor	IGBT,N CH,600V,30A,TO-247 RoHS: Compliant	593	250:$7.3400 100:$7.6800 25:$8.8500 10:$9.2800 1:$10.2700

图片	型号	描述
	Mfr.#: HGTG30N60B3 OMO.#: OMO-HGTG30N60B3	IGBT Transistors 600V N-Channel IGBT UFS Series
	Mfr.#: HGTG30N60B3 OMO.#: OMO-HGTG30N60B3-ON-SEMICONDUCTOR	IGBT Transistors 600V N-Channel IGBT UFS Series
	Mfr.#: HGTG30B60A4D OMO.#: OMO-HGTG30B60A4D-1190	全新原装
	Mfr.#: HGTG30N120CN OMO.#: OMO-HGTG30N120CN-1190	全新原装
	Mfr.#: HGTG30N60 OMO.#: OMO-HGTG30N60-1190	全新原装
	Mfr.#: HGTG30N60A4 G30N60A4 OMO.#: OMO-HGTG30N60A4-G30N60A4-1190	全新原装
	Mfr.#: HGTG30N60A4D,G30N60A4D,G OMO.#: OMO-HGTG30N60A4D-G30N60A4D-G-1190	全新原装
	Mfr.#: HGTG30N60B3D G30N60B3D OMO.#: OMO-HGTG30N60B3D-G30N60B3D-1190	全新原装
	Mfr.#: HGTG30N60C3 OMO.#: OMO-HGTG30N60C3-1190	Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
	Mfr.#: HGTG30N60A4D-- OMO.#: OMO-HGTG30N60A4D---1190	全新原装

HGTG30N60B3D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes