FDU8882

FDU8882
Mfr. #:
FDU8882
制造商:
ON Semiconductor
描述:
MOSFET N-CH 30V 55A I-PAK
生命周期:
制造商新产品。
数据表:
FDU8882 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
金融服务中心
产品分类
FET - 单
Tags
FDU888, FDU88, FDU8, FDU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
Trans MOSFET N-CH 30V 55A 3-Pin (3+Tab) TO-251 Rail
***ser
MOSFETs 30V,55A,11 OHM, NCH PWR TRENCH MOSFET
***ter Electronics
30V,55A,11 OHM, NCH, IPAK, POWER TRENCH MOSFET
***eco
003, PLASTIC MOLDED, TO-251 IPAK PKG, THRU-HOLE (39)<AZ
***i-Key
MOSFET N-CH 30V 55A I-PAK
***ark
MOSFET, N, I-PAK; Transistor type:MOSFET; Voltage, Vds typ:30V; Current, Id cont:55A; Resistance, Rds on:0.0115ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:2.5V; Case style:I-PAK (TO-251); Case style, RoHS Compliant: Yes
***nell
MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:55A; Resistance, Rds On:0.0115ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251; Current, Idm Pulse:50A; Lead Length:9.8mm; Lead Spacing:2.285mm; Power, Pd:55W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, trr Typ:82ns; Transistors, No. of:1; Voltage, Rds Measurement:10V; Voltage, Vds Max:30V
***ment14 APAC
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Transistor Case Style:I-PAK; SVHC:No SVHC (15-Dec-2010); Alternate Case Style:TO-251; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Length:9.8mm; Lead Spacing:2.285mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:55W; Pulse Current Idm:50A; Reverse Recovery Time trr Typ:82ns; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
型号 制造商 描述 库存 价格
FDU8882
DISTI # FDU8882-ND
ON SemiconductorMOSFET N-CH 30V 55A I-PAK
RoHS: Compliant
Min Qty: 1800
Container: Tube
Limited Supply - Call
    FDU8882
    DISTI # 512-FDU8882
    ON SemiconductorMOSFET 30V 55A 11 OHM NCH PWR TRENCH MOSFET
    RoHS: Compliant
    0
      FDU8882Fairchild Semiconductor CorporationPower Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Compliant
      518
      • 1000:$0.5000
      • 500:$0.5300
      • 100:$0.5500
      • 25:$0.5700
      • 1:$0.6200
      图片 型号 描述
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      Fixed Inductors 1 UH 20%
      可用性
      库存:
      Available
      订购:
      3000
      输入数量:
      FDU8882的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$0.75
      US$0.75
      10
      US$0.71
      US$7.12
      100
      US$0.68
      US$67.50
      500
      US$0.64
      US$318.75
      1000
      US$0.60
      US$600.00
      从...开始
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