SI8466EDB-T2-E1

SI8466EDB-T2-E1
Mfr. #:
SI8466EDB-T2-E1
制造商:
Vishay
描述:
IGBT Transistors MOSFET 8V 5.4A 1.8W 43mOhms @ 4.5V
生命周期:
制造商新产品。
数据表:
SI8466EDB-T2-E1 数据表
交货:
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支付:
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ECAD Model:
更多信息:
SI8466EDB-T2-E1 更多信息
产品属性
属性值
制造商
威世硅
产品分类
FET - 单
系列
沟槽FETR
打包
Digi-ReelR 替代包装
安装方式
贴片/贴片
商品名
MICROFOOT TrenchFET
包装盒
4-UFBGA, WLCSP
技术
工作温度
-55°C ~ 150°C (TJ)
安装型
表面贴装
通道数
1 Channel
供应商-设备-包
4-Microfoot
配置
单身的
FET型
MOSFET N 沟道,金属氧化物
最大功率
780mW
晶体管型
1 N-Channel
漏源电压 Vdss
8V
输入电容-Ciss-Vds
710pF @ 4V
FET-Feature
标准
Current-Continuous-Drain-Id-25°C
-
Rds-On-Max-Id-Vgs
43 mOhm @ 2A, 4.5V
Vgs-th-Max-Id
700mV @ 250μA
栅极电荷-Qg-Vgs
13nC @ 4.5V
钯功耗
1.8 W
秋季时间
20 ns
上升时间
30 ns
VGS-栅极-源极-电压
700 mV
Id 连续漏极电流
5.4 A
Vds-漏-源-击穿电压
8 V
VGS-th-Gate-Source-Threshold-Voltage
700 mV
Rds-On-Drain-Source-Resistance
43 mOhms
晶体管极性
N通道
典型关断延迟时间
80 ns
典型开启延迟时间
20 ns
Qg-门电荷
13 nC
正向跨导最小值
30 S
Tags
SI846, SI84, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 8V 5.4A 4-Pin Micro Foot T/R
***ark
N-Channel 8-V (D-S) Mosfet Rohs Compliant: No
***et
N-CH MOSFET MFOOT 1X1 8V 43MOHM @ 4.5V
***i-Key
MOSFET N-CH 8V 3.6A MICROFOOT
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
型号 制造商 描述 库存 价格
SI8466EDB-T2-E1
DISTI # V72:2272_09216592
Vishay IntertechnologiesTrans MOSFET N-CH 8V 5.4A 4-Pin Micro Foot T/R
RoHS: Compliant
1632
  • 1000:$0.1651
  • 500:$0.2050
  • 250:$0.2403
  • 100:$0.2430
  • 25:$0.3052
  • 10:$0.3089
  • 1:$0.3788
SI8466EDB-T2-E1
DISTI # SI8466EDB-T2-E1CT-ND
Vishay SiliconixMOSFET N-CH 8V 3.6A MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
15174In Stock
  • 1000:$0.2119
  • 500:$0.2742
  • 100:$0.3739
  • 10:$0.4990
  • 1:$0.5900
SI8466EDB-T2-E1
DISTI # SI8466EDB-T2-E1DKR-ND
Vishay SiliconixMOSFET N-CH 8V 3.6A MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
15174In Stock
  • 1000:$0.2119
  • 500:$0.2742
  • 100:$0.3739
  • 10:$0.4990
  • 1:$0.5900
SI8466EDB-T2-E1
DISTI # SI8466EDB-T2-E1TR-ND
Vishay SiliconixMOSFET N-CH 8V 3.6A MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
15000In Stock
  • 3000:$0.1875
SI8466EDB-T2-E1
DISTI # 25790159
Vishay IntertechnologiesTrans MOSFET N-CH 8V 5.4A 4-Pin Micro Foot T/R
RoHS: Compliant
1632
  • 1000:$0.1651
  • 500:$0.2050
  • 250:$0.2403
  • 100:$0.2430
  • 45:$0.3052
SI8466EDB-T2-E1
DISTI # SI8466EDB-T2-E1
Vishay IntertechnologiesTrans MOSFET N-CH 8V 5.4A 4-Pin MICRO FOOT T/R - Tape and Reel (Alt: SI8466EDB-T2-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 3000
  • 3000:$0.1829
  • 6000:$0.1829
  • 12000:$0.1819
  • 18000:$0.1819
  • 30000:$0.1809
SI8466EDB-T2-E1
DISTI # 67X6880
Vishay IntertechnologiesN-CHANNEL 8-V (D-S) MOSFET0
  • 1:$0.1900
  • 5000:$0.1850
  • 10000:$0.1710
  • 20000:$0.1600
  • 30000:$0.1490
  • 50000:$0.1420
SI8466EDB-T2-E1
DISTI # 78-SI8466EDB-T2-E1
Vishay IntertechnologiesMOSFET 8V Vds 5V Vgs MICRO FOOT 1 x 1
RoHS: Compliant
5844
  • 1:$0.5300
  • 10:$0.3980
  • 100:$0.2950
  • 500:$0.2430
  • 1000:$0.1880
  • 3000:$0.1710
  • 6000:$0.1600
  • 9000:$0.1490
  • 24000:$0.1430
SI8466EDB-T2-E1
DISTI # C1S803603975991
Vishay IntertechnologiesMOSFETs1632
  • 250:$0.2403
  • 100:$0.2430
  • 25:$0.3052
  • 10:$0.3089
图片 型号 描述
SI8466EDB-T2-E1

Mfr.#: SI8466EDB-T2-E1

OMO.#: OMO-SI8466EDB-T2-E1

MOSFET 8V Vds 5V Vgs MICRO FOOT 1 x 1
SI8466EDB-T2-E1

Mfr.#: SI8466EDB-T2-E1

OMO.#: OMO-SI8466EDB-T2-E1-VISHAY

IGBT Transistors MOSFET 8V 5.4A 1.8W 43mOhms @ 4.5V
可用性
库存:
Available
订购:
3500
输入数量:
SI8466EDB-T2-E1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.21
US$0.21
10
US$0.20
US$2.02
100
US$0.19
US$19.17
500
US$0.18
US$90.55
1000
US$0.17
US$170.40
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