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SIR424DP-T1-GE3

SIR424DP-T1-GE3
Mfr. #:
SIR424DP-T1-GE3
制造商:
Vishay
描述:
MOSFET N-CH 20V 30A PPAK SO-8
生命周期:
制造商新产品。
数据表:
SIR424DP-T1-GE3 数据表
交货:
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支付:
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ECAD Model:
更多信息:
SIR424DP-T1-GE3 更多信息
产品属性
属性值
制造商
威世硅
产品分类
FET - 单
系列
沟槽FETR
打包
Digi-ReelR 替代包装
部分别名
SIR424DP-GE3
单位重量
0.017870 oz
安装方式
贴片/贴片
包装盒
PowerPAKR SO-8
技术
硅
工作温度
-55°C ~ 150°C (TJ)
安装型
表面贴装
通道数
1 Channel
供应商-设备-包
PowerPAKR SO-8
配置
单四漏三源
FET型
MOSFET N 沟道，金属氧化物
最大功率
41.7W
晶体管型
1 N-Channel
漏源电压 Vdss
20V
输入电容-Ciss-Vds
1250pF @ 10V
FET-Feature
标准
Current-Continuous-Drain-Id-25°C
30A (Tc)
Rds-On-Max-Id-Vgs
5.5 mOhm @ 20A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
栅极电荷-Qg-Vgs
35nC @ 10V
钯功耗
4.8 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
10 ns
上升时间
12 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
30 A
Vds-漏-源-击穿电压
20 V
VGS-th-Gate-Source-Threshold-Voltage
2.5 V
Rds-On-Drain-Source-Resistance
4.6 mOhms
晶体管极性
N通道
典型关断延迟时间
23 ns
典型开启延迟时间
18 ns
Qg-门电荷
22 nC
正向跨导最小值
80 S
通道模式
增强
Tags
SIR42, SIR4, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIR424DP-T1-GE3 N-channel MOSFET Transistor; 23 A; 20 V; 8-Pin PowerPAK SO
***ure Electronics
SiR172DP Series N-Channel 20 V 0.0074 Ohm 41.7 W SMT Mosfet - PowerPAK® SO-8
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.0046Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:41.7W; No. Of Pins:8Pins Rohs Compliant: Yes
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
型号 制造商 描述 库存 价格
SIR424DP-T1-GE3
DISTI # V72:2272_07432057		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R2810
  • 1000:$0.4094
  • 500:$0.4629
  • 250:$0.5056
  • 100:$0.5225
  • 25:$0.6391
  • 10:$0.6415
  • 1:$0.7429
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 20V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2073In Stock
  • 1000:$0.4589
  • 500:$0.5812
  • 100:$0.7495
  • 10:$0.9480
  • 1:$1.0700
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 20V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2073In Stock
  • 1000:$0.4589
  • 500:$0.5812
  • 100:$0.7495
  • 10:$0.9480
  • 1:$1.0700
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 20V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.4158
SIR424DP-T1-GE3
DISTI # 27490183		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R3000
  • 3000:$0.4382
SIR424DP-T1-GE3
DISTI # 28976247		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R2810
  • 1000:$0.4094
  • 500:$0.4629
  • 250:$0.5056
  • 100:$0.5225
  • 25:$0.6391
  • 17:$0.6415
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R (Alt: SIR424DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.7809
  • 6000:€0.5599
  • 12000:€0.4539
  • 18000:€0.4009
  • 30000:€0.3839
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR424DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3929
  • 6000:$0.3809
  • 12000:$0.3649
  • 18000:$0.3549
  • 30000:$0.3459
SIR424DP-T1-GE3
DISTI # 70AC6481		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 70AC6481)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$1.0700
  • 25:$0.9480
  • 50:$0.8490
  • 100:$0.7490
  • 250:$0.6650
  • 500:$0.5810
  • 1000:$0.4580
SIR424DP-T1-GE3
DISTI # 70AC6481		Vishay Intertechnologies 3000
  • 1:$1.0700
  • 25:$0.9480
  • 50:$0.8490
  • 100:$0.7490
  • 250:$0.6650
  • 500:$0.5810
  • 1000:$0.4580
SIR424DP-T1-GE3
DISTI # 15R4881		Vishay IntertechnologiesN-CHANNEL 20-V (D-S) MOSFET0
  • 1:$0.4500
  • 3000:$0.4500
SIR424DP-T1-GE3.
DISTI # 30AC0117		Vishay IntertechnologiesN-CHANNEL 20-V (D-S) MOSFET , ROHS COMPLIANT: YES0
  • 1:$0.4500
  • 3000:$0.4500
SIR424DP-T1-GE3
DISTI # 70616563		Vishay SiliconixSIR424DP-T1-GE3 N-channel MOSFET Transistor,23 A,20 V,8-Pin PowerPAK SO
RoHS: Compliant		0
  • 300:$0.5100
  • 600:$0.5000
  • 1500:$0.4900
  • 3000:$0.4800
SIR424DP-T1-GE3
DISTI # 781-SIR424DP-GE3		Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		3647
  • 1:$0.9500
  • 10:$0.7780
  • 100:$0.5970
  • 500:$0.5140
  • 1000:$0.4500
SIR424DP-T1-GE3
DISTI # 2646399		Vishay IntertechnologiesMOSFET, N-CH, 20V, 30A, POWERPAK SO
RoHS: Compliant		0
  • 1:$1.5100
  • 10:$1.2300
  • 100:$0.9450
  • 500:$0.8140
  • 1000:$0.7120
  • 3000:$0.7120
SIR424DP-T1-GE3
DISTI # 2679709		Vishay IntertechnologiesMOSFET, N-CH, 20V, 30A, POWERPAK SO
RoHS: Compliant		0
  • 3000:$0.5700
  • 6000:$0.5510
  • 9000:$0.5410
SIR424DP-T1-GE3
DISTI # 2646399		Vishay IntertechnologiesMOSFET, N-CH, 20V, 30A, POWERPAK SO
RoHS: Compliant		0
  • 5:£0.6120
  • 50:£0.5880
  • 100:£0.4340
  • 500:£0.3410
  • 1500:£0.3260
SIR424DP-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		Americas - 15000
    SIR424DP-T1-GE3
    DISTI # C1S803603788924    		Vishay IntertechnologiesMOSFETs
    RoHS: Compliant    		3000
    • 3000:$0.5020
    SIR424DP-T1-GE3
    DISTI # C1S803601945880    		Vishay IntertechnologiesMOSFETs
    RoHS: Compliant    		2810
    • 250:$0.5057
    • 100:$0.5227
    • 25:$0.6392
    • 10:$0.6417
    图片 型号 描述
    SIR424DP-T1-GE3

    Mfr.#: SIR424DP-T1-GE3

    OMO.#: OMO-SIR424DP-T1-GE3

    		 MOSFET 20V Vds 20V Vgs PowerPAK SO-8
    SIR424DP-T1-E3

    Mfr.#: SIR424DP-T1-E3

    OMO.#: OMO-SIR424DP-T1-E3-1190

    		 全新原装
    SIR424DP-T1-GE3

    Mfr.#: SIR424DP-T1-GE3

    OMO.#: OMO-SIR424DP-T1-GE3-VISHAY

    		 MOSFET N-CH 20V 30A PPAK SO-8
    可用性
    库存:
    Available
    订购:
    3000
    输入数量:
    SIR424DP-T1-GE3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$0.51
    US$0.51
    10
    US$0.49
    US$4.88
    100
    US$0.46
    US$46.20
    500
    US$0.44
    US$218.15
    1000
    US$0.41
    US$410.60
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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