SI7922DN-T1-E3

SI7922DN-T1-E3
Mfr. #:
SI7922DN-T1-E3
制造商:
Vishay
描述:
IGBT Transistors MOSFET DUAL N-CH 100V (D-S)
生命周期:
制造商新产品。
数据表:
SI7922DN-T1-E3 数据表
交货:
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支付:
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ECAD Model:
更多信息:
SI7922DN-T1-E3 更多信息
产品属性
属性值
制造商
威世
产品分类
FET - 阵列
系列
沟槽FETR
打包
Digi-ReelR 替代包装
部分别名
SI7922DN-T1
安装方式
贴片/贴片
包装盒
PowerPAKR 1212-8 Dual
技术
工作温度
-55°C ~ 150°C (TJ)
安装型
表面贴装
通道数
2 Channel
供应商-设备-包
PowerPAKR 1212-8 Dual
配置
双重的
FET型
2 N-Channel (Dual)
最大功率
1.3W
晶体管型
2 N-Channel
漏源电压 Vdss
100V
输入电容-Ciss-Vds
-
FET-Feature
逻辑电平门
Current-Continuous-Drain-Id-25°C
1.8A
Rds-On-Max-Id-Vgs
195 mOhm @ 2.5A, 10V
Vgs-th-Max-Id
3.5V @ 250μA
栅极电荷-Qg-Vgs
8nC @ 10V
钯功耗
1.3 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
11 ns
上升时间
11 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
1.8 A
Vds-漏-源-击穿电压
100 V
Rds-On-Drain-Source-Resistance
195 mOhms
晶体管极性
N通道
典型关断延迟时间
8 ns
典型开启延迟时间
7 ns
通道模式
增强
Tags
SI7922DN-T, SI7922D, SI7922, SI792, SI79, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
型号 制造商 描述 库存 价格
SI7922DN-T1-E3
DISTI # SI7922DN-T1-E3TR-ND
Vishay SiliconixMOSFET 2N-CH 100V 1.8A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.8465
SI7922DN-T1-E3
DISTI # SI7922DN-T1-E3CT-ND
Vishay SiliconixMOSFET 2N-CH 100V 1.8A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.9364
  • 500:$1.1302
  • 100:$1.4531
  • 10:$1.8080
  • 1:$2.0000
SI7922DN-T1-E3
DISTI # SI7922DN-T1-E3DKR-ND
Vishay SiliconixMOSFET 2N-CH 100V 1.8A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.9364
  • 500:$1.1302
  • 100:$1.4531
  • 10:$1.8080
  • 1:$2.0000
SI7922DN-T1-E3
DISTI # SI7922DN-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R (Alt: SI7922DN-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€1.5849
  • 6000:€1.1108
  • 12000:€0.9159
  • 18000:€0.8129
  • 30000:€0.7689
SI7922DN-T1-E3
DISTI # SI7922DN-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7922DN-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.8289
  • 6000:$0.8049
  • 12000:$0.7719
  • 18000:$0.7499
  • 30000:$0.7299
SI7922DN-T1-E3
DISTI # 06J8182
Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 100V, POWERPAK,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.162ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V , RoHS Compliant: Yes0
  • 1:$1.7800
  • 25:$1.4800
  • 50:$1.3100
  • 100:$1.1400
  • 250:$1.0700
  • 500:$0.9980
  • 1000:$0.8270
SI7922DN-T1-E3
DISTI # 73W9421
Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 100V, 0.162OHM, 1.8A, POWERPAK, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.162ohm,Rds(on) Test Voltage Vgs:10V , RoHS Compliant: Yes0
  • 1:$0.8440
  • 3000:$0.8380
  • 6000:$0.7980
  • 12000:$0.7070
SI7922DN-T1-E3
DISTI # 70026293
Vishay SiliconixSI7922DN-T1-E3 Dual N-channel MOSFET Module,1.8 A,100 V,8-Pin PowerPAK 1212
RoHS: Compliant
0
  • 3000:$0.9300
  • 6000:$0.9200
  • 9000:$0.8700
SI7922DN-T1-E3
DISTI # 781-SI7922DN-T1-E3
Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK 1212-8
RoHS: Compliant
0
  • 1:$1.7800
  • 10:$1.4800
  • 100:$1.1400
  • 500:$0.9980
  • 1000:$0.8270
  • 3000:$0.7700
SI7922DN-T1-E3Vishay Intertechnologies 145
    SI7922DN-T1-E3Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK 1212-8Americas -
    • 3000:$0.7680
    • 6000:$0.7180
    • 12000:$0.6910
    SI7922DN-T1-E3
    DISTI # 1189340
    Vishay IntertechnologiesDUAL N CH MOSFET, 100V, POWERPAK
    RoHS: Compliant
    0
    • 3000:£0.7270
    图片 型号 描述
    SI7922DN-T1-E3

    Mfr.#: SI7922DN-T1-E3

    OMO.#: OMO-SI7922DN-T1-E3

    MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
    SI7922DN-T1-GE3

    Mfr.#: SI7922DN-T1-GE3

    OMO.#: OMO-SI7922DN-T1-GE3

    MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
    SI7922DN-T1-GE3

    Mfr.#: SI7922DN-T1-GE3

    OMO.#: OMO-SI7922DN-T1-GE3-VISHAY

    IGBT Transistors MOSFET Dual N-Ch 100V 195 mohm @ 4.5V
    SI7922DN-T1-E3

    Mfr.#: SI7922DN-T1-E3

    OMO.#: OMO-SI7922DN-T1-E3-VISHAY

    IGBT Transistors MOSFET DUAL N-CH 100V (D-S)
    SI7922DN-T1-E3-CUT TAPE

    Mfr.#: SI7922DN-T1-E3-CUT TAPE

    OMO.#: OMO-SI7922DN-T1-E3-CUT-TAPE-1190

    全新原装
    SI7922DN

    Mfr.#: SI7922DN

    OMO.#: OMO-SI7922DN-1190

    MOSFET, DUAL, NN, POWERPAK
    SI7922DN-T1

    Mfr.#: SI7922DN-T1

    OMO.#: OMO-SI7922DN-T1-1190

    MOSFET Transistor, Matched Pair, N-Channel, LLCC
    可用性
    库存:
    Available
    订购:
    4500
    输入数量:
    SI7922DN-T1-E3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$1.04
    US$1.04
    10
    US$0.98
    US$9.85
    100
    US$0.93
    US$93.29
    500
    US$0.88
    US$440.50
    1000
    US$0.83
    US$829.20
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