CSD17327Q5A

Mfr. #:: CSD17327Q5A
描述:: RF Bipolar Transistors MOSFET 30V,NCh Nex FET Pwr MOSFET
生命周期:: 制造商新产品。
数据表:: CSD17327Q5A 数据表
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更多信息:: CSD17327Q5A 更多信息 CSD17327Q5A Product Details

产品属性
属性值

制造商: 德州仪器

产品分类: 晶体管 - FET、MOSFET - 单

RoHS: 细节

品牌: 德州仪器

安装方式: 贴片/贴片

包装/箱: VSON-FET-8

通道数: 1 Channel

晶体管极性: N通道

Vds - 漏源击穿电压: 30 V

Id - 连续漏极电流: 16 A

Rds On - 漏源电阻: 12.4 mOhms

Vgs - 栅源电压: 10 V

Vgs th - 栅源阈值电压: 1.6 V

Qg - 栅极电荷: 3.6 nC

最高工作温度: + 150 C

技术: 硅

打包: 卷轴

配置: 单身的

最低工作温度: - 55 C

Pd - 功耗: 3 W

系列: CSD17322Q5A

商品名: 场效应管

晶体管类型: 1 N-Channel

Tags: CSD173, CSD17, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD17327Q5A 描述

***as Instruments: 30V, N ch NexFET MOSFET™, single SON5x6, 15.5mOhm 8-VSONP -55 to 150

***ical: Trans MOSFET N-CH 30V 13A 8-Pin VSON-FET EP T/R

***et: 30V N-Channel NexFET Power MOSFETs

CSD17327Q5A 更多信息

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

型号	描述	库存	价格
CSD17327Q5A DISTI # 296-29019-1-ND	MOSFET N-CH 30V 65A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1960In Stock	1000:$0.4502 500:$0.5664 100:$0.7261 10:$0.9150 1:$1.0300
CSD17327Q5A DISTI # 296-29019-6-ND	MOSFET N-CH 30V 65A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1960In Stock	1000:$0.4502 500:$0.5664 100:$0.7261 10:$0.9150 1:$1.0300
CSD17327Q5A DISTI # 296-29019-2-ND	MOSFET N-CH 30V 65A 8SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.4089
CSD17327Q5A DISTI # CSD17327Q5A	30V N-Channel NexFET Power MOSFETs - Tape and Reel (Alt: CSD17327Q5A) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.4089 5000:$0.3889 10000:$0.3759 15000:$0.3629 25000:$0.3529
CSD17327Q5A	30V, N-Channel NexFET&#153,Power MOSFETs	4765	1000:$0.3200 750:$0.3600 500:$0.4500 250:$0.5500 100:$0.6000 25:$0.7000 10:$0.7500 1:$0.8400
CSD17327Q5A DISTI # 595-CSD17327Q5A	MOSFET 30V,NCh Nex FET Pwr MOSFET RoHS: Compliant	0	2500:$0.3760 10000:$0.3610 22500:$0.3500
CSD17327Q5A	Power Field-Effect Transistor, 13A I(D), 30V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	1975	1000:$0.3700 500:$0.3900 100:$0.4000 25:$0.4200 1:$0.4500

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