SI4464DY-T1-E3

Mfr. #:: SI4464DY-T1-E3
制造商:: Vishay
描述:: MOSFET N-CH 200V 1.7A 8-SOIC
生命周期:: 制造商新产品。
数据表:: SI4464DY-T1-E3 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: SI4464DY-T1-E3 更多信息

产品属性
属性值

制造商: 威世硅

产品分类: FET - 单

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI4464DY-T1

单位重量: 0.006596 oz

安装方式: 贴片/贴片

商品名: 沟槽场效应晶体管

包装盒: 8-SOIC (0.154", 3.90mm Width)

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: 8-SO

配置: 单身的

FET型: MOSFET N 沟道，金属氧化物

最大功率: 1.5W

晶体管型: 1 N-Channel

漏源电压 Vdss: 200V

输入电容-Ciss-Vds: -

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 1.7A (Ta)

Rds-On-Max-Id-Vgs: 240 mOhm @ 2.2A, 10V

Vgs-th-Max-Id: 4V @ 250μA

栅极电荷-Qg-Vgs: 18nC @ 10V

钯功耗: 1.5 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 12 ns

上升时间: 12 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 1.7 A

Vds-漏-源-击穿电压: 200 V

Rds-On-Drain-Source-Resistance: 240 mOhms

晶体管极性: N通道

典型关断延迟时间: 15 ns

典型开启延迟时间: 10 ns

通道模式: 增强

Tags: SI4464DY-T1, SI4464D, SI4464, SI446, SI44, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4464DY-T1-E3 更多信息

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

型号	制造商	描述	库存	价格
SI4464DY-T1-E3 DISTI # SI4464DY-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 200V 1.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	12459In Stock	1000:$0.5646 500:$0.7151 100:$0.9221 10:$1.1670 1:$1.3200
SI4464DY-T1-E3 DISTI # SI4464DY-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 200V 1.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	12459In Stock	1000:$0.5646 500:$0.7151 100:$0.9221 10:$1.1670 1:$1.3200
SI4464DY-T1-E3 DISTI # SI4464DY-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 200V 1.7A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	10000In Stock	2500:$0.5116
SI4464DY-T1-E3 DISTI # SI4464DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R (Alt: SI4464DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.7209 5000:€0.4919 10000:€0.4229 15000:€0.3909 25000:€0.3639
SI4464DY-T1-E3 DISTI # SI4464DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4464DY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.4519 5000:$0.4389 10000:$0.4209 15000:$0.4089 25000:$0.3979
SI4464DY-T1-E3 DISTI # 35K3467	Vishay Intertechnologies	N CH MOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:200V,On Resistance Rds(on):195mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:2.5W , RoHS Compliant: Yes	0	1:$0.6250 2500:$0.6200 5000:$0.6020 10000:$0.5790
SI4464DY-T1-E3 DISTI # 06J7747	Vishay Intertechnologies	N CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:200V,On Resistance Rds(on):195mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:2.5W , RoHS Compliant: Yes	0	1:$1.4000 10:$1.1500 25:$1.0600 50:$0.9710 100:$0.8820 250:$0.8200 500:$0.7580
SI4464DY-T1-E3 DISTI # 70026108	Vishay Siliconix	MOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.195Ohm,ID 1.7A,SO-8,PD 1.5W,VGS +/-20V RoHS: Compliant	1091	1:$0.9700 25:$0.9300 100:$0.8500 250:$0.8000 500:$0.7300
SI4464DY-T1-E3 DISTI # 781-SI4464DY-T1-E3	Vishay Intertechnologies	MOSFET 200V Vds 20V Vgs SO-8 RoHS: Compliant	1514	1:$1.4000 10:$1.1500 100:$0.8820 500:$0.7580 1000:$0.5990 2500:$0.5590 5000:$0.5310 10000:$0.5190
SI4464DY-T1-E3	Vishay Intertechnologies	RoHS: Compliant	2250Cut Tape/Mini-Reel	1:$0.7300 250:$0.6300 500:$0.6200 750:$0.6150 1500:$0.5950
SI4464DY-T1-E3	Vishay Intertechnologies	Single N-Channel 200 V 0.24 Ohms Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant	12500Reel	2500:$0.5350
SI4464DY-T1-E3	Vishay Intertechnologies		2068
SI4464DY-T1-E3	Vishay Intertechnologies	INSTOCK	2910
SI4464DY-T1-E3	Vishay Semiconductors	INSTOCK	2910
SI4464DY-T1-E3 DISTI # XSFP00000063472	Vishay Siliconix	RoHS: Compliant	6680	2500:$1.4600 6680:$1.3300

图片	型号	描述
	Mfr.#: SI4464DY-T1-E3 OMO.#: OMO-SI4464DY-T1-E3	MOSFET 200V Vds 20V Vgs SO-8
	Mfr.#: SI4464DY-T1-GE3 OMO.#: OMO-SI4464DY-T1-GE3	MOSFET 200V Vds 20V Vgs SO-8
	Mfr.#: SI4464DY-T1-E3-CUT TAPE OMO.#: OMO-SI4464DY-T1-E3-CUT-TAPE-1190	全新原装
	Mfr.#: SI4464DY-T1 OMO.#: OMO-SI4464DY-T1-1190	全新原装
	Mfr.#: SI4464DY-T1-E3 OMO.#: OMO-SI4464DY-T1-E3-VISHAY	MOSFET N-CH 200V 1.7A 8-SOIC
	Mfr.#: SI4464DY-T1-GE3 OMO.#: OMO-SI4464DY-T1-GE3-VISHAY	MOSFET N-CH 200V 1.7A 8-SOIC
	Mfr.#: SI4464DY-TI-E3 OMO.#: OMO-SI4464DY-TI-E3-1190	全新原装

SI4464DY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes