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SPD08N50C3ATMA1

SPD08N50C3ATMA1
Mfr. #:
SPD08N50C3ATMA1
制造商:
Infineon Technologies
描述:
MOSFET LOW POWER_LEGACY
生命周期:
制造商新产品。
数据表:
SPD08N50C3ATMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-252-3
Vds - 漏源击穿电压：
500 V
商品名：
酷摩
打包：
卷轴
高度：
2.3 mm
长度：
6.5 mm
系列：
CoolMOS C3
宽度：
6.22 mm
品牌：
英飞凌科技
产品类别：
MOSFET
出厂包装数量：
2500
子类别：
MOSFET
第 # 部分别名：
SP001117776 SPD08N50C3
单位重量：
0.139332 oz
Tags
SPD08N50C, SPD08N5, SPD08N, SPD08, SPD0, SPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 500 V 600 mOhm 32 nC CoolMOS™ Power Mosfet - PG-TO252-3-1
*** Source Electronics
Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 500V 7.6A DPAK
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:560V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:7.6A; Package / Case:TO-252; Power Dissipation Pd:83W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***icroelectronics
N-channel 600 V, 0.57 Ohm, 8 A, DPAK FDmesh(TM) II Power MOSFET
***et
Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 600 V 600 mOhm Surface Mount FDmesh™ II Power Mosfet - TO-252-3
***ark
MOSFET, N CH, 600V, 8A, TO-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.57ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 8A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***icroelectronics
Automotive-grade N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a DPAK package
***ure Electronics
Single N-Channel 500 V 0.32 Ohm 27 nC 90 W Silicon SMT Mosfet - TO-252-3
***r Electronics
Power Field-Effect Transistor, 12A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ment14 APAC
MOSFET, N CH, 500V, 12A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:90W; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ark
Mosfet Transistor, N Channel, 6 A, 525 V, 0.95 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
***icroelectronics
N-channel 525 V, 0.95 Ohm typ., 6 A SuperFREDmesh(TM) 3 Power MOSFET in DPAK package
***ure Electronics
N-Channel 525 V 1.15 Ohm Surface Mount SuperFREDMesh III MosFet - TO-252-3
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 6A I(D), 525V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N CH, 525V, 6A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 525V; On Resistance Rds(on): 0.95ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power
***ure Electronics
D Series 500 V 5.3 A 1.5 Ohm Single N-Channel Power MOSFET - TO-252
***ical
Trans MOSFET N-CH 500V 5.3A 3-Pin(2+Tab) DPAK
***el Electronic
MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS
***S
French Electronic Distributor since 1988
***nell
MOSFET, N-CH, 500V, 5.3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***ical
Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) DPAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N-CH, 500V, 3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:500V; On Resistance Rds(on):2.6ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***ark
MOSFET Transistor, N Channel, 7.1 A, 550 V, 520 mohm, 10 V, 3 V
***roFlash
Power Field-Effect Transistor, 7.1A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.1A; Drain Source Voltage Vds:550V; On Resistance Rds(on):520mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:7.1A; Package / Case:TO-252; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:550V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
型号 制造商 描述 库存 价格
SPD08N50C3ATMA1
DISTI # V72:2272_06383995		Infineon Technologies AGTrans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2170
  • 1000:$0.8048
  • 500:$1.0073
  • 250:$1.1005
  • 100:$1.1457
  • 25:$1.2883
  • 10:$1.4314
  • 1:$1.8551
SPD08N50C3ATMA1
DISTI # V36:1790_06383995		Infineon Technologies AGTrans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500000:$0.7015
  • 1250000:$0.7019
  • 250000:$0.7389
  • 25000:$0.8086
  • 2500:$0.8205
SPD08N50C3ATMA1
DISTI # SPD08N50C3ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 500V 7.6A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		226In Stock
  • 1000:$0.9076
  • 500:$1.0954
  • 100:$1.3333
  • 10:$1.6590
  • 1:$1.8500
SPD08N50C3ATMA1
DISTI # SPD08N50C3ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 500V 7.6A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		226In Stock
  • 1000:$0.9076
  • 500:$1.0954
  • 100:$1.3333
  • 10:$1.6590
  • 1:$1.8500
SPD08N50C3ATMA1
DISTI # SPD08N50C3ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 500V 7.6A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 12500:$0.7698
  • 5000:$0.7901
  • 2500:$0.8205
SPD08N50C3ATMA1
DISTI # 32669651		Infineon Technologies AGTrans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 2500:$0.7249
SPD08N50C3ATMA1
DISTI # 30722726		Infineon Technologies AGTrans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2290
  • 8:$1.8551
SPD08N50C3ATMA1
DISTI # SPD08N50C3ATMA1		Infineon Technologies AGTrans MOSFET N-CH 500V 7.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: SPD08N50C3ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.7349
  • 15000:$0.7479
  • 10000:$0.7739
  • 5000:$0.8029
  • 2500:$0.8339
SPD08N50C3ATMA1
DISTI # SP001117776		Infineon Technologies AGTrans MOSFET N-CH 500V 7.6A 3-Pin TO-252 T/R (Alt: SP001117776)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.7539
  • 15000:€0.8039
  • 10000:€0.8839
  • 5000:€0.9889
  • 2500:€1.2679
SPD08N50C3ATMA1
DISTI # 726-SPD08N50C3ATMA1		Infineon Technologies AGMOSFET LOW POWER_LEGACY
RoHS: Compliant		0
  • 1:$1.7000
  • 10:$1.4400
  • 100:$1.1500
  • 500:$1.0100
  • 1000:$0.8400
  • 2500:$0.7820
  • 5000:$0.7530
  • 10000:$0.7240
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可用性
库存:
Available
订购:
5000
输入数量:
SPD08N50C3ATMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$1.70
US$1.70
10
US$1.44
US$14.40
100
US$1.15
US$115.00
500
US$1.01
US$505.00
1000
US$0.84
US$840.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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