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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SIS430DN-T1-GE3 DISTI # SIS430DN-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 25V 35A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 2In Stock |
|
| SIS430DN-T1-GE3 DISTI # SIS430DN-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 25V 35A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 2In Stock |
|
| SIS430DN-T1-GE3 DISTI # SIS430DN-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 25V 35A PPAK 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SIS430DN-T1-GE3 DISTI # 70616571 | Vishay Siliconix | SIS430DN-T1-GE3 N-channel MOSFET Transistor,21 A,25 V,8-Pin PowePAK 1212 RoHS: Compliant | 0 |
|
| SIS430DN-T1-GE3 DISTI # 781-SIS430DN-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SISA12ADN-T1-GE3 RoHS: Compliant | 1904 |
|
| SIS430DN-T1-GE3 DISTI # 8141308P | Vishay Intertechnologies | TRANS MOSFET N-CH 25V 21.5A, RL | 1650 |
|
| SIS430DNT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 21.5A I(D), 25V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 |
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: SIS443DN-T1-GE3 OMO.#: OMO-SIS443DN-T1-GE3 |
MOSFET -40V Vds 20V Vgs PowerPAK 1212-8 |
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Mfr.#: SIS4001X01-3070 OMO.#: OMO-SIS4001X01-3070-1190 |
全新原装 |
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Mfr.#: SIS402DN-T1-GE3CT OMO.#: OMO-SIS402DN-T1-GE3CT-1190 |
全新原装 |
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Mfr.#: SIS407DN-T1-GE3 OMO.#: OMO-SIS407DN-T1-GE3-VISHAY |
MOSFET P-CH 20V 25A 1212-8 PPAK |
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Mfr.#: SIS412-DN OMO.#: OMO-SIS412-DN-1190 |
全新原装 |
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Mfr.#: SIS412DN-T1-E3 OMO.#: OMO-SIS412DN-T1-E3-1190 |
全新原装 |
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Mfr.#: SIS413DN-T1-GE3 OMO.#: OMO-SIS413DN-T1-GE3-VISHAY |
MOSFET P-CH 30V 18A PPAK 1212-8 |
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Mfr.#: SIS415DNT-T1-E3 OMO.#: OMO-SIS415DNT-T1-E3-1190 |
全新原装 |
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Mfr.#: SIS472ADN-T1-GE3 OMO.#: OMO-SIS472ADN-T1-GE3-VISHAY |
MOSFET N-CH 30V 24A POWERPAK1212 |
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Mfr.#: SIS4953 OMO.#: OMO-SIS4953-1190 |
全新原装 |