NGTB40N60FL2WG

NGTB40N60FL2WG
Mfr. #:
NGTB40N60FL2WG
制造商:
ON Semiconductor
描述:
IGBT Transistors 600V/40A FAST IGBT FSII T
生命周期:
制造商新产品。
数据表:
NGTB40N60FL2WG 数据表
交货:
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HTML Datasheet:
NGTB40N60FL2WG DatasheetNGTB40N60FL2WG Datasheet (P4-P6)NGTB40N60FL2WG Datasheet (P7-P9)NGTB40N60FL2WG Datasheet (P10)
ECAD Model:
更多信息:
NGTB40N60FL2WG 更多信息
产品属性
属性值
制造商:
安森美半导体
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-247-3
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
600 V
集电极-发射极饱和电压:
1.85 V
最大栅极发射极电压:
20 V
25 C 时的连续集电极电流:
80 A
Pd - 功耗:
366 W
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
打包:
管子
连续集电极电流 Ic 最大值:
80 A
品牌:
安森美半导体
栅极-发射极漏电流:
200 nA
产品类别:
IGBT晶体管
出厂包装数量:
30
子类别:
IGBT
单位重量:
1.340411 oz
Tags
NGTB40N60, NGTB40N6, NGTB40, NGTB4, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 80A 366000mW 3-Pin(3+Tab) TO-247 Tube
***ied Electronics & Automation
NGTB40N60FL2WG; IGBT Transistor; 80 A 600 V; 1MHz; 3-Pin TO-247
***nell
600V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Field Stop II Series IGBTs
ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More
型号 制造商 描述 库存 价格
NGTB40N60FL2WG
DISTI # V99:2348_07301290
ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
8
  • 2500:$1.2715
  • 1000:$1.2872
  • 500:$1.3381
  • 250:$1.3675
  • 100:$1.3812
  • 10:$1.4161
  • 1:$2.7717
NGTB40N60FL2WG
DISTI # NGTB40N60FL2WGOS-ND
ON SemiconductorIGBT 600V 80A 366W TO247
RoHS: Compliant
Min Qty: 90
Container: Tube
On Order
  • 90:$4.6842
NGTB40N60FL2WG
DISTI # 30243099
ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
8
  • 3:$2.7717
NGTB40N60FL2WG
DISTI # NGTB40N60FL2WG
ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube (Alt: NGTB40N60FL2WG)
RoHS: Compliant
Min Qty: 180
Container: Tube
Asia - 0
    NGTB40N60FL2WG
    DISTI # NGTB40N60FL2WG
    ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube (Alt: NGTB40N60FL2WG)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1:€4.4800
    • 10:€3.4400
    • 100:€2.9800
    • 250:€2.8300
    • 500:€2.5500
    NGTB40N60FL2WG
    DISTI # NGTB40N60FL2WG
    ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube - Bulk (Alt: NGTB40N60FL2WG)
    Min Qty: 118
    Container: Bulk
    Americas - 0
    • 118:$2.6900
    • 120:$2.6900
    • 238:$2.6900
    • 590:$2.5900
    • 1180:$2.5900
    NGTB40N60FL2WG
    DISTI # 70600205
    ON SemiconductorNGTB40N60FL2WG,IGBT Transistor,80 A 600 V,1MHz,3-Pin TO-247
    RoHS: Compliant
    0
    • 2:$3.6000
    • 10:$3.4200
    • 20:$3.2500
    • 50:$3.1000
    • 100:$2.9400
    NGTB40N60FL2WG
    DISTI # 863-NGTB40N60FL2WG
    ON SemiconductorIGBT Transistors 600V/40A FAST IGBT FSII T
    RoHS: Compliant
    162
    • 1:$5.0500
    • 10:$4.2900
    • 100:$3.7200
    • 250:$3.5300
    • 500:$3.1700
    • 1000:$2.6700
    • 2500:$2.5400
    NGTB40N60FL2WGON SemiconductorInsulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
    RoHS: Compliant
    930
    • 1000:$2.7900
    • 500:$2.9400
    • 100:$3.0600
    • 25:$3.1900
    • 1:$3.4300
    图片 型号 描述
    IRS2113SPBF

    Mfr.#: IRS2113SPBF

    OMO.#: OMO-IRS2113SPBF

    Gate Drivers HI LO SIDE DRVR 600V 2A 120ns
    FQA32N20C

    Mfr.#: FQA32N20C

    OMO.#: OMO-FQA32N20C

    MOSFET 200V N-Channel Advance Q-FET
    IRS2113SPBF

    Mfr.#: IRS2113SPBF

    OMO.#: OMO-IRS2113SPBF-INFINEON-TECHNOLOGIES

    Gate Drivers HI LO SIDE DRVR 600V 2A 120ns
    FQA32N20C

    Mfr.#: FQA32N20C

    OMO.#: OMO-FQA32N20C-ON-SEMICONDUCTOR

    Darlington Transistors MOSFET 200V N-Channel Advance Q-FET
    可用性
    库存:
    162
    订购:
    2145
    输入数量:
    NGTB40N60FL2WG的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$5.05
    US$5.05
    10
    US$4.29
    US$42.90
    100
    US$3.72
    US$372.00
    250
    US$3.53
    US$882.50
    500
    US$3.17
    US$1 585.00
    1000
    US$2.67
    US$2 670.00
    2500
    US$2.54
    US$6 350.00
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