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BFR 35AP E6327

BFR 35AP E6327
Mfr. #:
BFR 35AP E6327
制造商:
Infineon Technologies
描述:
RF Bipolar Transistors NPN Silicon RF TRANSISTOR
生命周期:
制造商新产品。
数据表:
BFR 35AP E6327 数据表
交货:
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支付:
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ECAD Model:
更多信息:
BFR 35AP E6327 更多信息
产品属性
属性值
制造商
英飞凌科技
产品分类
射频晶体管 (BJT)
系列
BFR35
打包
卷轴
部分别名
BFR35APE6327HTSA1 BFR35APE6327XT SP000011060
单位重量
0.007090 oz
安装方式
贴片/贴片
包装盒
SOT-23
技术
硅
配置
单身的
晶体管型
双极
钯功耗
280 mW
最高工作温度
+ 150 C
最低工作温度
- 65 C
工作频率
5000 MHz
集电极-发射极-电压-VCEO-Max
15 V
晶体管极性
NPN
发射极-基极-电压-VEBO
2.5 V
最大直流集电极电流
0.045 A
Tags
BFR35APE6, BFR35APE, BFR35AP, BFR35A, BFR35, BFR3, BFR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF Transistors
Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.
型号 制造商 描述 库存 价格
BFR35APE6327HTSA1
DISTI # BFR35APE6327HTSA1TR-ND		Infineon Technologies AGRF TRANS NPN 15V 5GHZ SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.1066
BFR35APE6327HTSA1
DISTI # SP000011060		Infineon Technologies AGTrans GP BJT NPN 15V 0.045A 3-Pin SOT-23 T/R (Alt: SP000011060)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 3000
  • 3000:€0.1629
  • 6000:€0.1269
  • 12000:€0.1039
  • 18000:€0.0879
  • 30000:€0.0809
BFR 35AP E6327
DISTI # SP000011060		Infineon Technologies AGTrans GP BJT NPN 15V 0.045A 3-Pin SOT-23 T/R (Alt: SP000011060)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.1509
  • 6000:€0.1299
  • 12000:€0.1109
  • 18000:€0.0949
  • 30000:€0.0899
BFR35APE6327BTSA1
DISTI # BFR35APE6327HTSA1		Infineon Technologies AGTrans GP BJT NPN 15V 0.045A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BFR35APE6327HTSA1)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.0929
  • 12000:$0.0889
  • 18000:$0.0859
  • 30000:$0.0829
  • 60000:$0.0819
BFR35APE6327HTSA1
DISTI # 13AC8244		Infineon Technologies AGRF TRANSISTOR, NPN, 15V, 5GHZ, SOT-23,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:15V,Transition Frequency ft:5GHz,Power Dissipation Pd:280mW,DC Collector Current:45mA,DC Current Gain hFE:70hFE,RF Transistor RoHS Compliant: Yes2179
  • 1000:$0.1380
  • 500:$0.1520
  • 250:$0.1650
  • 100:$0.1790
  • 50:$0.2240
  • 25:$0.2690
  • 10:$0.3150
  • 1:$0.4110
BFR35APE6327Infineon Technologies AG 
RoHS: Not Compliant		393000
  • 500:$0.0800
  • 1000:$0.0800
  • 25:$0.0900
  • 100:$0.0900
  • 1:$0.1000
BFR35APE6327HTSA1Infineon Technologies AGRF Small Signal Bipolar Transistor, 0.045A I(C), 1-Element, L Band, Silicon, NPN
RoHS: Compliant		18000
  • 500:$0.1100
  • 1000:$0.1100
  • 25:$0.1200
  • 100:$0.1200
  • 1:$0.1300
BFR 35AP E6327
DISTI # 726-BFR35APE6327		Infineon Technologies AGRF Bipolar Transistors NPN Silicon RF TRANSISTOR
RoHS: Compliant		5738
  • 1:$0.3700
  • 10:$0.2870
  • 100:$0.1560
  • 1000:$0.1170
  • 3000:$0.1010
  • 9000:$0.0940
BFR35APE6327HTSA1
DISTI # 726-BFR35APE6327HTSA		Infineon Technologies AGRF Bipolar Transistors NPN Silicon RF TRANSISTOR
RoHS: Compliant		2725
  • 1:$0.3700
  • 10:$0.2870
  • 100:$0.1560
  • 1000:$0.1170
  • 3000:$0.1010
  • 9000:$0.0940
BFR35APE6327HTSA1
DISTI # 4452203P		Infineon Technologies AGNPN BIPOLAR RF BFR35AP 5GHZ SOT23, RL5675
  • 100:£0.1080
BFR35APE6327HTSA1
DISTI # 4452203		Infineon Technologies AGNPN BIPOLAR RF BFR35AP 5GHZ SOT23, PK505
  • 100:£0.1080
  • 5:£0.4000
BFR35APE6327Infineon Technologies AG 2534
    BFR35AP-E6327 INSTOCK2482
      BFR35AP-E6327Infineon Technologies AGINSTOCK2482
        BFR35APE6327HTSA1
        DISTI # 2726104        		Infineon Technologies AGRF TRANSISTOR, NPN, 15V, 5GHZ, SOT-23
        RoHS: Compliant        		2179
        • 500:£0.0882
        • 250:£0.0986
        • 100:£0.1090
        • 25:£0.2420
        • 5:£0.2510
        BFR35APE6327HTSA1
        DISTI # 2726104        		Infineon Technologies AGRF TRANSISTOR, NPN, 15V, 5GHZ, SOT-23
        RoHS: Compliant        		2279
        • 3000:$0.1600
        • 1000:$0.1850
        • 100:$0.2470
        • 10:$0.4550
        • 1:$0.6020
        图片 型号 描述
        BFR 35AP E6327

        Mfr.#: BFR 35AP E6327

        OMO.#: OMO-BFR-35AP-E6327

        		 RF Bipolar Transistors NPN Silicon RF TRANSISTOR
        BFR 35AP E6327

        Mfr.#: BFR 35AP E6327

        OMO.#: OMO-BFR-35AP-E6327-317

        		 RF Bipolar Transistors NPN Silicon RF TRANSISTOR
        可用性
        库存:
        Available
        订购:
        2500
        输入数量:
        BFR 35AP E6327的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格（美元）
        数量
        单价
        小计金额
        1
        US$0.11
        US$0.11
        10
        US$0.11
        US$1.08
        100
        US$0.10
        US$10.25
        500
        US$0.10
        US$48.40
        1000
        US$0.09
        US$91.10
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