RN1907FE,LF(CB

Mfr. #:: RN1907FE,LF(CB
制造商:: Toshiba Semiconductor and Storage
描述:
生命周期:: 制造商新产品。
数据表:: RN1907FE,LF(CB 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:

产品属性
属性值

制造商: 东芝半导体和存储

产品分类: 晶体管 (BJT) - 阵列，预偏置

系列: -

打包: Digi-ReelR 替代包装

包装盒: SOT-563, SOT-666

安装型: 表面贴装

供应商-设备-包: ES6

最大功率: 100mW

晶体管型: 2 NPN - Pre-Biased (Dual)

电流收集器 Ic-Max: 100mA

电压收集器发射极击穿最大值: 50V

电阻-基-R1-欧姆: 10k

电阻-发射极-基极-R2-欧姆: 47k

DC-电流-增益-hFE-Min-Ic-Vce: 80 @ 10mA, 5V

Vce-饱和度-Max-Ib-Ic: 300mV @ 250μA, 5mA

电流收集器截止最大值: 100nA (ICBO)

频率转换: 250MHz

Tags: RN1907F, RN1907, RN190, RN19, RN1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RN1907FE,LF(CB 描述

***i-Key: TRANS 2NPN PREBIAS 0.1W ES6

***ure Electronics: 2SAR523UB Series 50 V 100 mA PNP General Purpose Transistor - UMT3F

***ical: Trans GP BJT PNP 50V 0.1A 3-Pin UMTF T/R

***nell: TRANS, PNP, -50V, -0.1A, 150DEG C, 0.2W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 200mW; DC Collector Current: -100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-323FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***et Europe: Trans GP BJT PNP 50V 0.1A 3-Pin SOT-416FL T/R

***ment14 APAC: Transistor, PNP, -50V, -0.1A, 150DEG C, 0.15W; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:-; Power

***nell: TRANS, PNP, -50V, -0.1A, 150DEG C, 0.15W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: -; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-416; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

*** Stop Electro: Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

***et: Trans GP BJT PNP 50V 0.1A 3-Pin SOT-723 T/R

***nell: TRANS, PNP, -50V, -0.1A, 150DEG C, 0.15W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 150mW; DC Collector Current: -100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-723; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: DDTC114CA Series NPN 50 V 100 mA Digital Transistor Surface Mount - SOT-23-3

***p One Stop Global: Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R

***S.I.T. Europe - USA - Asia: Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***p One Stop Global: Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R

***ure Electronics: DDTC Series 50 V 100 mA NPN Pre-Biased Small Signal Transistor - SOT-23-3

***ark: Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:4.7Kohm; Base-Emitter Resistor R2:4.7Kohm; Resistor Ratio, R1 / R2:1(Ratio); Msl:- Rohs Compliant: Yes

***ow.cn: Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-323 T/R

***ure Electronics: DDTC114 Series 50 V 100 mA Surface Mount Pre-Biased Transistor - SOT-323

***ark: Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Ratio, R1 / R2:0.21(Ratio); Msl:- Rohs Compliant: Yes

Market price

型号	制造商	描述	库存	价格
RN1907FE,LF(CT DISTI # V36:1790_13897297	Toshiba America Electronic Components	X34 PB-F ES6 PLN (LF) TRANSIST	0	4000000:$0.0242 2000000:$0.0243 400000:$0.0313 40000:$0.0458 4000:$0.0483
RN1907FE,LF(CT DISTI # RN1907FELF(CTCT-ND	Toshiba America Electronic Components	TRANS 2NPN PREBIAS 0.1W ES6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3338In Stock	1000:$0.0552 500:$0.0811 250:$0.0952 100:$0.1514 25:$0.1948 10:$0.2700 1:$0.3000
RN1907FE,LF(CT DISTI # RN1907FELF(CTDKR-ND	Toshiba America Electronic Components	TRANS 2NPN PREBIAS 0.1W ES6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3338In Stock	1000:$0.0552 500:$0.0811 250:$0.0952 100:$0.1514 25:$0.1948 10:$0.2700 1:$0.3000
RN1907FE,LF(CT DISTI # RN1907FELF(CTTR-ND	Toshiba America Electronic Components	TRANS 2NPN PREBIAS 0.1W ES6 RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Temporarily Out of Stock	100000:$0.0280 28000:$0.0336 12000:$0.0357 8000:$0.0420 4000:$0.0483
RN1907FELF(CT DISTI # RN1907FE,LF(CT	Toshiba America Electronic Components	Trans Digital BJT NPN 50V 100mA 6-Pin SC-107C T/R - Tape and Reel (Alt: RN1907FE,LF(CT) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	40000:$0.0256 24000:$0.0263 16000:$0.0278 8000:$0.0295 4000:$0.0314
RN1907FE,LF(CT DISTI # 757-RN1907FELF(CT	Toshiba America Electronic Components	Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor RoHS: Compliant	7240	1:$0.2900 10:$0.1860 100:$0.0780 1000:$0.0530 4000:$0.0400 8000:$0.0350 24000:$0.0320 48000:$0.0300 100000:$0.0270
RN1907FE,LF(CT	Toshiba America Electronic Components	Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor RoHS: Compliant	Americas -
RN1907FELF(CT	Toshiba America Electronic Components	Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRAN 200MW /250M RoHS: Compliant	Americas -

图片	型号	描述
	Mfr.#: RN1907FE,LF(CT OMO.#: OMO-RN1907FE-LF-CT	Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
	Mfr.#: RN1907FE,LF(CT OMO.#: OMO-RN1907FE-LF-CT-TOSHIBA-SEMICONDUCTOR-AND-STOR	Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto
	Mfr.#: RN1907FELF(CTCT-ND OMO.#: OMO-RN1907FELF-CTCT-ND-1190	全新原装
	Mfr.#: RN1907FELF(CTDKR-ND OMO.#: OMO-RN1907FELF-CTDKR-ND-1190	全新原装
	Mfr.#: RN1907FELF(CTTR-ND OMO.#: OMO-RN1907FELF-CTTR-ND-1190	全新原装
	Mfr.#: RN1907FELF(CT OMO.#: OMO-RN1907FELF-CT-1190	Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRAN 200MW /250M
	Mfr.#: RN1907FE OMO.#: OMO-RN1907FE-1190	全新原装
	Mfr.#: RN1907FE,LF(CB OMO.#: OMO-RN1907FE-LF-CB-1190	全新原装
	Mfr.#: RN1907FETE85L OMO.#: OMO-RN1907FETE85L-1190	全新原装

RN1907FE,LF(CB

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes