IPB108N15N3GATMA1

Mfr. #:: IPB108N15N3GATMA1
制造商:: Infineon Technologies
描述:: MOSFET MV POWER MOS
生命周期:: 制造商新产品。
数据表:: IPB108N15N3GATMA1 数据表
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产品属性
属性值

制造商：: 英飞凌

产品分类：: MOSFET

技术：: 硅

安装方式：: 贴片/贴片

包装/案例：: TO-263-3

通道数：: 1 Channel

晶体管极性：: N通道

配置：: 单身的

商品名：: 优化MOS

打包：: 卷轴

高度：: 4.4 mm

长度：: 10 mm

晶体管类型：: 1 N-Channel

宽度：: 9.25 mm

品牌：: 英飞凌科技

产品类别：: MOSFET

子类别：: MOSFET

第 # 部分别名：: G IPB108N15N3 IPB18N15N3GXT SP000677862

单位重量：: 0.139332 oz

Tags: IPB108N15N3G, IPB108, IPB10, IPB1, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB108N15N3GATMA1 描述

***ure Electronics: Single N-Channel 150 V 10.8 mOhm 41 nC OptiMOS Power Mosfet - D2PAK

***ow.cn: Trans MOSFET N-CH 150V 83A Automotive 3-Pin(2+Tab) D2PAK T/R

***ineon SCT: The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO263-3, RoHS

***ineon: The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

Market price

型号	制造商	描述	库存	价格
IPB108N15N3GATMA1 DISTI # V72:2272_06378661	Infineon Technologies AG	Trans MOSFET N-CH 150V 83A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
IPB108N15N3GATMA1 DISTI # V36:1790_06378661	Infineon Technologies AG	Trans MOSFET N-CH 150V 83A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$2.1480 500000:$2.1510 100000:$2.3420 10000:$2.6590 1000:$2.7110
IPB108N15N3GATMA1 DISTI # IPB108N15N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 150V 83A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7116In Stock	500:$2.7588 100:$3.2408 10:$3.9550 1:$4.4000
IPB108N15N3GATMA1 DISTI # IPB108N15N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 83A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7116In Stock	500:$2.7588 100:$3.2408 10:$3.9550 1:$4.4000
IPB108N15N3GATMA1 DISTI # IPB108N15N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 150V 83A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	7000In Stock	2000:$2.1460 1000:$2.2590
IPB108N15N3GXT DISTI # IPB108N15N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 150V 83A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB108N15N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	6000:$1.8900 10000:$1.8900 4000:$1.9900 2000:$2.0900 1000:$2.1900
IPB108N15N3GATMA1 DISTI # 85X6017	Infineon Technologies AG	MOSFET Transistor, N Channel, 83 A, 150 V, 0.0091 ohm, 10 V, 3 V RoHS Compliant: Yes	862	500:$2.5800 250:$2.8700 100:$3.0200 50:$3.1700 25:$3.3300 10:$3.4800 1:$4.1000
IPB108N15N3 G DISTI # 726-IP726-B108N15N3G	Infineon Technologies AG	MOSFET N-Ch 150V 83A D2PAK-2 OptiMOS 3 RoHS: Compliant	1489	1:$4.0600 10:$3.4500 100:$2.9900 250:$2.8400 500:$2.5500 1000:$2.1500 2000:$2.0400
IPB108N15N3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	625	1000:$1.8200 500:$1.9100 100:$1.9900 25:$2.0800 1:$2.2400
IPB108N15N3GATMA1 DISTI # 2443383	Infineon Technologies AG	MOSFET, N CH, 150V, 83A, TO-263-3 RoHS: Compliant	862	1000:$3.2400 500:$3.8400 250:$4.2800 100:$4.5100 10:$5.2000 1:$6.1200
IPB108N15N3GATMA1 DISTI # 2443383RL	Infineon Technologies AG	MOSFET, N CH, 150V, 83A, TO-263-3 RoHS: Compliant	0	1000:$3.2400 500:$3.8400 250:$4.2800 100:$4.5100 10:$5.2000 1:$6.1200
IPB108N15N3GATMA1 DISTI # 2443383	Infineon Technologies AG	MOSFET, N CH, 150V, 83A, TO-263-3	892	500:£1.9700 250:£2.1900 100:£2.3000 10:£2.6600 1:£3.5000

图片	型号	描述
	Mfr.#: IPB108N15N3 G OMO.#: OMO-IPB108N15N3-G	MOSFET N-Ch 150V 83A D2PAK-2 OptiMOS 3
	Mfr.#: IPB108N15N3GATMA1 OMO.#: OMO-IPB108N15N3GATMA1	MOSFET MV POWER MOS
	Mfr.#: IPB108N15N3G 108N15N OMO.#: OMO-IPB108N15N3G-108N15N-1190	全新原装
	Mfr.#: IPB108N15N3 OMO.#: OMO-IPB108N15N3-1190	全新原装
	Mfr.#: IPB108N15N3 G OMO.#: OMO-IPB108N15N3-G-1190	Trans MOSFET N-CH 150V 83A 3-Pin TO-263 T/R (Alt: IPB108N15N3 G)
	Mfr.#: IPB108N15N3G OMO.#: OMO-IPB108N15N3G-1190	Power Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	Mfr.#: IPB108N15N3GATMA1 OMO.#: OMO-IPB108N15N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 150V 83A TO263-3
	Mfr.#: IPB108N15N3GS OMO.#: OMO-IPB108N15N3GS-1190	全新原装

IPB108N15N3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes