FGA15N120ANTDTU

Mfr. #:: FGA15N120ANTDTU
制造商:: ON Semiconductor / Fairchild
描述:: IGBT Transistors 1200V NPT Trench IGBT
生命周期:: 制造商新产品。
数据表:: FGA15N120ANTDTU 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:

产品属性
属性值

制造商：: 安森美半导体

产品分类：: IGBT晶体管

RoHS：: Y

技术：: 硅

包装/案例：: TO-3P-3

安装方式：: 通孔

配置：: 单身的

集电极-发射极电压 VCEO 最大值：: 1200 V

最大栅极发射极电压：: 20 V

Pd - 功耗：: 186 W

最低工作温度：: - 55 C

最高工作温度：: + 150 C

打包：: 管子

连续集电极电流 Ic 最大值：: 30 A

高度：: 19.9 mm

长度：: 15.6 mm

宽度：: 4.8 mm

品牌：: 安森美半导体/飞兆半导体

产品类别：: IGBT晶体管

出厂包装数量：: 450

子类别：: IGBT

单位重量：: 0.245577 oz

Tags: FGA15N120ANTDT, FGA15N120ANT, FGA15N120AN, FGA15N120A, FGA15N120, FGA15N1, FGA15N, FGA15, FGA1, FGA

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGA15N120ANTDTU 描述

***ical: Trans IGBT Chip N-CH 1.2KV 30A 3-Pin (3+Tab) TO-3P Rail

***ser: MOSFETs 1200V NPT Trench IGBT

***i-Key: IGBT NPT 1200V 15A TO-3P

***ment14 APAC: IGBT, NPT, 1200V, TO-3P; DC Collector Current:30A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:186W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Ic @ Vce Sat:15A; Current Ic Continuous a Max:30A; Current Temperature:25°C; Fall Time tf:100ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.67°C/W; No. of Transistors:1; Package / Case:TO-3P; Pin Configuration:With flywheel diode; Power Dissipation Max:186W; Power Dissipation Pd:186W; Pulsed Current Icm:45A; Rise Time:20ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

Market price

型号	制造商	描述	库存	价格
FGA15N120ANTDTU-F109 DISTI # 31299420	ON Semiconductor	1200V NPT TRENCH IGBT	2590	10:$1.0760
FGA15N120ANTDTU-F109 DISTI # FGA15N120ANTDTU-F109-ND	ON Semiconductor	IGBT 1200V 30A 186W TO3P RoHS: Compliant Min Qty: 1 Container: Tube	71In Stock	1350:$1.4057 900:$1.6966 450:$1.9389 10:$2.5690 1:$2.8600
FGA15N120ANTDTU DISTI # FGA15N120ANTDTU-ND	ON Semiconductor	IGBT 1200V 30A 186W TO3P RoHS: Compliant Min Qty: 450 Container: Tube	Limited Supply - Call
FGA15N120ANTDTU-F109 DISTI # C1S541901598224	ON Semiconductor	Unclassified	2590	2000:$1.3000 1000:$1.4000 500:$1.8300 100:$1.9900 25:$2.4200 5:$2.9900
FGA15N120ANTDTU_F109 DISTI # FGA15N120ANTDTU-F109	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 24A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FGA15N120ANTDTU-F109) RoHS: Compliant Min Qty: 1	Europe - 0	1:€1.7449 10:€1.4269 25:€1.2199 50:€1.1079 100:€1.0899 500:€1.0739 1000:€1.0569
FGA15N120ANTDTU_F109 DISTI # FGA15N120ANTDTU-F109	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 24A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA15N120ANTDTU-F109) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$1.0489 900:$1.0419 1800:$1.0289 2700:$1.0159 4500:$0.9909
FGA15N120ANTDTU-F109 DISTI # 31Y1431	ON Semiconductor	IGBT, SINGLE, 1.2KV, 30A, TO-3P-3,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):2.3V,Power Dissipation Pd:186W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes	368	1:$2.7200 10:$2.3100 100:$1.8500 500:$1.6200 1000:$1.3400 2500:$1.2500 5000:$1.2100
FGA15N120ANTDTU DISTI # 512-FGA15N120ANTDTU	ON Semiconductor	IGBT Transistors 1200V NPT Trench IGBT RoHS: Compliant	0
FGA15N120ANTDTU-F109 DISTI # 512-FGA15N120ANTDTUF	ON Semiconductor	IGBT Transistors 1200V NPT Trench RoHS: Compliant	513	1:$2.7200 10:$2.3100 100:$1.8500 500:$1.6200 1000:$1.3400
FGA15N120ANTDTU	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	10712	1000:$1.6300 500:$1.7200 100:$1.7900 25:$1.8700 1:$2.0100
FGA15N120ANTDTU_F109 DISTI # 6715398P	ON Semiconductor	TRANSISTOR IGBT N-CH 1.2KV 24A TO-3P(N), TU	18	25:£1.9600 100:£1.8000 250:£1.6800 500:£1.5600
FGA15N120ANTDTU_F109 DISTI # 6715398	ON Semiconductor	TRANSISTOR IGBT N-CH 1.2KV 24A TO-3P(N), EA	38	1:£2.3900 25:£1.9600 100:£1.8000 250:£1.6800 500:£1.5600
FGA15N120ANTDTU-F109 DISTI # 2453877	ON Semiconductor	IGBT, SINGLE, 1.2KV, 30A, TO-3P-3 RoHS: Compliant	818	1:£2.1000 10:£1.7200 100:£1.3900 250:£1.2600 500:£1.1300
FGA15N120ANTDTU DISTI # 1324824	ON Semiconductor	RoHS: Compliant	0	1:$3.1000 25:$2.8300 100:$2.6500 250:$2.4100 500:$2.0300 1000:$1.7500
FGA15N120ANTDTU-F109 DISTI # 2453877	ON Semiconductor	IGBT, SINGLE, 1.2KV, 30A, TO-3P-3 RoHS: Compliant	818	1:$4.3100 10:$3.6600 100:$2.9300 500:$2.5700 1000:$2.1300 2500:$1.9800 5000:$1.9200 10000:$1.8400

图片	型号	描述
	Mfr.#: FGA15N120FTDTU OMO.#: OMO-FGA15N120FTDTU	IGBT Transistors 1200V 15A Field Stop Trench
	Mfr.#: FGA15N120,FGA15N120ANTD, OMO.#: OMO-FGA15N120-FGA15N120ANTD--1190	全新原装
	Mfr.#: FGA15N120ADN OMO.#: OMO-FGA15N120ADN-1190	全新原装
	Mfr.#: FGA15N120AND(IGBT) OMO.#: OMO-FGA15N120AND-IGBT--1190	全新原装
	Mfr.#: FGA15N120ANTD OMO.#: OMO-FGA15N120ANTD-1190	全新原装
	Mfr.#: FGA15N120ANTD 15A 1200V NPT OMO.#: OMO-FGA15N120ANTD-15A-1200V-NPT-1190	全新原装
	Mfr.#: FGA15N120ANTDTU,FGA15N12 OMO.#: OMO-FGA15N120ANTDTU-FGA15N12-1190	全新原装
	Mfr.#: FGA15N120D OMO.#: OMO-FGA15N120D-1190	全新原装
	Mfr.#: FGA15N120KDA OMO.#: OMO-FGA15N120KDA-1190	全新原装
	Mfr.#: FGA15N120RUFD OMO.#: OMO-FGA15N120RUFD-1190	全新原装

FGA15N120ANTDTU

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes