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HGTG18N120BN

HGTG18N120BN
Mfr. #:
HGTG18N120BN
制造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 54A 1200V N-Ch
生命周期:
制造商新产品。
数据表:
HGTG18N120BN 数据表
交货:
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HTML Datasheet:
HGTG18N120BN DatasheetHGTG18N120BN Datasheet (P4-P6)HGTG18N120BN Datasheet (P7-P8)
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
IGBT晶体管
RoHS：
E
技术：
硅
包装/案例：
TO-247-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
1200 V
集电极-发射极饱和电压：
2.45 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
54 A
Pd - 功耗：
390 W
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
系列：
HGTG18N120BN
打包：
管子
连续集电极电流 Ic 最大值：
54 A
高度：
20.82 mm
长度：
15.87 mm
宽度：
4.82 mm
品牌：
安森美半导体/飞兆半导体
连续集电极电流：
54 A
栅极-发射极漏电流：
+/- 250 nA
产品类别：
IGBT晶体管
出厂包装数量：
450
子类别：
IGBT
第 # 部分别名：
HGTG18N120BN_NL
单位重量：
0.225401 oz
Tags
HGTG18N120B, HGTG18, HGTG1, HGTG, HGT
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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
TransIGBTChipNCH1200V54A390000mW3Pin3TabTO247Rail
***ark
IGBT;TransistorTypeIGBT;TransistorPolarityNChannel;ContinuousCollectorCurrentIc54A;CollectorEmitterSaturationVoltageVcesat27V;PowerDissipationPd390W;PackageCaseTO247;RoHSCompliantYes
***rchildSemiconductor
HGTG18N120BNisbasedonNonPunchThroughNPTIGBTdesignsTheIGBTisidealformanyhighvoltageswitchingapplicationsoperatingatmoderatefrequencieswherelowconductionlossesareessentialsuchasUPSsolarinvertermotorcontrolandpowersupplies
型号 制造商 描述 库存 价格
HGTG18N120BN
DISTI # 16558844		ON Semiconductor54A&#44,1200V&#44,NPT SERIES300
  • 300:$1.6945
HGTG18N120BND
DISTI # HGTG18N120BND-ND		ON SemiconductorIGBT 1200V 54A 390W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		884In Stock
  • 2700:$2.3913
  • 900:$2.9772
  • 450:$3.3180
  • 25:$4.0352
  • 10:$4.2690
  • 1:$4.7500
HGTG18N120BN
DISTI # HGTG18N120BN-ND		ON SemiconductorIGBT 1200V 54A 390W TO247
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
  • 450:$2.9221
HGTG18N120BND
DISTI # V36:1790_06358981		ON SemiconductorNPTPIGBT TO247 54A 1200V0
  • 450000:$1.9270
  • 225000:$1.9320
  • 45000:$2.7410
  • 4500:$4.4480
  • 450:$4.7500
HGTG18N120BND
DISTI # HGTG18N120BND		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG18N120BND)
RoHS: Compliant
Min Qty: 30
Container: Tube		Americas - 1266
  • 150:$2.4900
  • 300:$2.4900
  • 30:$2.5900
  • 60:$2.5900
  • 90:$2.5900
HGTG18N120BN
DISTI # HGTG18N120BN		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG18N120BN)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$1.9900
  • 450:$2.0900
  • 900:$2.0900
  • 1800:$2.0900
  • 2700:$2.0900
HGTG18N120BN
DISTI # HGTG18N120BN		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG18N120BN)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 100:€1.5900
  • 500:€1.5900
  • 1000:€1.5900
  • 25:€1.6900
  • 50:€1.6900
  • 10:€1.7900
  • 1:€1.8900
HGTG18N120BN
DISTI # HGTG18N120BN		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG18N120BN)
RoHS: Compliant
Min Qty: 50
Container: Bulk		Americas - 0
  • 500:$6.0900
  • 250:$6.2900
  • 150:$6.3900
  • 50:$6.4900
  • 100:$6.4900
HGTG18N120BND
DISTI # HGTG18N120BND		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG18N120BND)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.6900
  • 500:€1.7900
  • 50:€1.8900
  • 100:€1.8900
  • 25:€1.9900
  • 10:€2.0900
  • 1:€2.2900
HGTG18N120BND
DISTI # 58K8901		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8901)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
    HGTG18N120BN
    DISTI # 83F5467    		ON SemiconductorSINGLE IGBT, 1.2KV, 54A,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2.7V,Power Dissipation Pd:390W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes0
    • 500:$4.5000
    • 250:$4.6400
    • 100:$5.5400
    • 50:$5.9600
    • 25:$6.3700
    • 10:$6.9900
    • 1:$7.7900
    HGTG18N120BND
    DISTI # 97K1398    		ON SemiconductorIGBT Single Transistor, General Purpose, 54 A, 2.7 V, 390 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes382
    • 500:$4.2400
    • 250:$4.6100
    • 100:$4.7900
    • 50:$5.1100
    • 25:$5.4300
    • 10:$5.6700
    • 1:$6.2100
    HGTG18N120BN
    DISTI # 512-HGTG18N120BN    		ON SemiconductorIGBT Transistors 54A 1200V N-Ch
    RoHS: Compliant    		0
      HGTG18N120BND
      DISTI # 512-HGTG18N120BND      		ON SemiconductorIGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
      RoHS: Compliant      		665
      • 1:$6.2100
      • 10:$5.2800
      • 100:$4.5700
      • 250:$4.3400
      • 500:$3.8900
      HGTG18N120BNFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247
      RoHS: Compliant      		737
      • 1000:$2.4300
      • 500:$2.5600
      • 100:$2.6700
      • 25:$2.7800
      • 1:$3.0000
      HGTG18N120BND
      DISTI # 9034285      		ON SemiconductorIGBT N-CH 1200V 54A NPT TO-247, EA93
      • 300:£3.6400
      • 100:£3.8000
      • 30:£4.3900
      • 15:£4.6000
      • 1:£5.0900
      HGTG18N120BND
      DISTI # 9034285P      		ON SemiconductorIGBT N-CH 1200V 54A NPT TO-247, TU732
      • 300:£3.6400
      • 100:£3.8000
      • 30:£4.3900
      • 15:£4.6000
      HGTG18N120BNDHarris Semiconductor 38
        HGTG18N120BN
        DISTI # HGTG18N120BN        		ON SemiconductorTransistor: IGBT,1.2kV,26A,390W,TO247-311
        • 20:$5.2254
        • 10:$5.9461
        • 5:$6.9000
        • 1:$7.6669
        HGTG18N120BND
        DISTI # HGTG18N120BND        		ON SemiconductorTransistor: IGBT,1.2kV,26A,390W,TO247-346
        • 30:$3.8900
        • 10:$4.3200
        • 3:$5.3900
        • 1:$6.2500
        HGTG18N120BND
        DISTI # 1095111        		ON SemiconductorIGBT, N, TO-247
        RoHS: Compliant        		391
        • 500:$5.9800
        • 250:$6.6800
        • 100:$7.0300
        • 10:$8.1200
        • 1:$9.5500
        HGTG18N120BND
        DISTI # XSKDRABS0025239        		ON SEMICONDUCTOR 
        RoHS: Compliant        		360 in Stock0 on Order
        • 360:$2.8300
        • 165:$3.0300
        HGTG18N120BND
        DISTI # 1095111        		ON SemiconductorIGBT, N, TO-2472009
        • 500:£3.0000
        • 250:£3.3400
        • 100:£3.5200
        • 10:£4.0700
        • 1:£5.2800
        图片 型号 描述
        HGTG18N120BND

        Mfr.#: HGTG18N120BND

        OMO.#: OMO-HGTG18N120BND

        		 IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
        HGTG18N120BN

        Mfr.#: HGTG18N120BN

        OMO.#: OMO-HGTG18N120BN

        		 IGBT Transistors 54A 1200V N-Ch
        HGTG18N120BND

        Mfr.#: HGTG18N120BND

        OMO.#: OMO-HGTG18N120BND-ON-SEMICONDUCTOR

        		 IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
        HGTG18N120

        Mfr.#: HGTG18N120

        OMO.#: OMO-HGTG18N120-1190

        		 全新原装
        HGTG18N120BN

        Mfr.#: HGTG18N120BN

        OMO.#: OMO-HGTG18N120BN-ON-SEMICONDUCTOR

        		 IGBT 1200V 54A 390W TO247
        HGTG18N120BND,18N120BND

        Mfr.#: HGTG18N120BND,18N120BND

        OMO.#: OMO-HGTG18N120BND-18N120BND-1190

        		 全新原装
        HGTG18N120BND,18N120BND,

        Mfr.#: HGTG18N120BND,18N120BND,

        OMO.#: OMO-HGTG18N120BND-18N120BND--1190

        		 全新原装
        HGTG18N120BND,18N120BND,18N120,

        Mfr.#: HGTG18N120BND,18N120BND,18N120,

        OMO.#: OMO-HGTG18N120BND-18N120BND-18N120--1190

        		 全新原装
        HGTG18N120BND-NL

        Mfr.#: HGTG18N120BND-NL

        OMO.#: OMO-HGTG18N120BND-NL-1190

        		 全新原装
        HGTG18N120BN G18N120BN

        Mfr.#: HGTG18N120BN G18N120BN

        OMO.#: OMO-HGTG18N120BN-G18N120BN-1190

        		 全新原装
        可用性
        库存:
        Available
        订购:
        5500
        输入数量:
        HGTG18N120BN的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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