IRGB10B60KDPBF

Mfr. #:: IRGB10B60KDPBF
制造商:: Infineon Technologies
描述:: IGBT Transistors 600V UltraFast 10-30kHz
生命周期:: 制造商新产品。
数据表:: IRGB10B60KDPBF 数据表
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产品属性
属性值

Tags: IRGB10, IRGB1, IRGB, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRGB10B60KDPBF 描述

***ineon: Target Applications: Air Conditioner; Dryer; Fan; Pump; Solar; UPS; Washing Machine; Welding

***ernational Rectifier: 600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package

***ure Electronics: IRGB10B60 Series 600 V 22 A 156 W Insulated Gate Bipolar Transistor - TO-220AB

***ied Electronics & Automation: 600V ULTRAFAST 10-30 KHZ COPACK IGBT IN A TO-220AB PACKAGE

***ical: Trans IGBT Chip N-CH 600V 22A 3-Pin(3+Tab) TO-220AB

***i-Key: IGBT W/DIODE 600V 22A TO-220AB

***ark: IGBT, 600V, 22A, TO-220; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current, Ic Continuous a Max:22A; Voltage, Vce Sat Max:2.2V; Power Dissipation:104W; Case Style:TO-220AB; Termination Type:Through ;RoHS Compliant: Yes

***nell: IGBT, 600V, 22A, TO-220; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current Ic Continuous a Max:22A; Voltage, Vce Sat Max:2.2V; Power Dissipation:104W; Case Style:TO-220AB; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:44A; Power, Pd:104W; Time, Fall:32ns; Time, Fall Max:32ns; Time, Rise:20ns

***ment14 APAC: IGBT, 600V, 22A, TO-220; Transistor Type:IGBT; DC Collector Current:22A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:104W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:22A; Fall Time Max:32ns; Fall Time tf:32ns; Package / Case:TO-220AB; Power Dissipation Max:156W; Power Dissipation Pd:104W; Power Dissipation Pd:104W; Pulsed Current Icm:44A; Rise Time:20ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Market price

型号	制造商	描述	库存	价格
IRGB10B60KDPBF DISTI # IRGB10B60KDPBF-ND	Infineon Technologies AG	IGBT 600V 22A 156W TO220AB RoHS: Compliant Min Qty: 1000 Container: Tube	Limited Supply - Call	1000:$1.8318
IRGB10B60KDPBF DISTI # IRGB10B60KDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 22A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRGB10B60KDPBF) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	10000:$1.4900 4000:$1.5900 6000:$1.5900 1000:$1.6900 2000:$1.6900
IRGB10B60KDPBF DISTI # IRGB10B60KDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 22A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRGB10B60KDPBF) Min Qty: 234 Container: Bulk	Americas - 0	1170:$1.2900 2340:$1.2900 468:$1.3900 702:$1.3900 234:$1.4900
IRGB10B60KDPBF DISTI # 63J7437	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 22A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7437) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0
IRGB10B60KDPBF DISTI # SP001542270	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 22A 3-Pin(3+Tab) TO-220AB (Alt: SP001542270) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€1.2900 100:€1.3900 500:€1.3900 25:€1.4900 50:€1.4900 10:€1.6900 1:€1.8900
IRGB10B60KDPBF DISTI # 63J7437	Infineon Technologies AG	SINGLE IGBT, 600V, 22A,DC Collector Current:22A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:156W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	5	500:$1.7700 250:$1.8200 100:$2.1700 50:$2.5100 25:$2.6700 10:$3.0500 1:$3.5300
IRGB10B60KDPBF DISTI # 70017214	Infineon Technologies AG	600V Ultrafast 10-30 kHz COPACK IGBT IN A TO-220AB Package RoHS: Compliant	405	1:$3.6500 2:$3.5770 5:$3.4680 10:$3.3220 25:$3.1030
IRGB10B60KDPBF DISTI # 942-IRGB10B60KDPBF	Infineon Technologies AG	IGBT Transistors 600V UltraFast 10-30kHz RoHS: Compliant	116	1:$2.8500 10:$2.4200 100:$2.1000 250:$1.9900 500:$1.7900 1000:$1.5100
IRGB10B60KDPBF	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	2	1000:$1.4100 500:$1.4800 100:$1.5400 25:$1.6100 1:$1.7300
IRGB10B60KDPBF	International Rectifier	Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	3620	1000:$1.4100 500:$1.4800 100:$1.5400 25:$1.6100 1:$1.7300
IRGB10B60KDPBF DISTI # 8659567	Infineon Technologies AG	IGBT, 600V, 22A, TO-220 RoHS: Compliant	0	500:$2.7600 250:$3.0600 100:$3.2300 10:$3.7300 1:$4.3800

图片	型号	描述
	Mfr.#: IRGB10B60KDPBF OMO.#: OMO-IRGB10B60KDPBF	IGBT Transistors 600V UltraFast 10-30kHz
	Mfr.#: IRGB10B60KDPBF OMO.#: OMO-IRGB10B60KDPBF-INFINEON-TECHNOLOGIES	IGBT Transistors 600V UltraFast 10-30kHz
	Mfr.#: IRGB10B60KD OMO.#: OMO-IRGB10B60KD-1190	IGBT, 600V, 22A, TO-220
	Mfr.#: IRGB10B60KD1PBF OMO.#: OMO-IRGB10B60KD1PBF-1190	全新原装
	Mfr.#: IRGB10B60KDPBF,IRGB10B60 OMO.#: OMO-IRGB10B60KDPBF-IRGB10B60-1190	全新原装

IRGB10B60KDPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes