FGB5N60UNDF

Mfr. #:: FGB5N60UNDF
制造商:: ON Semiconductor
描述:: IGBT Transistors 600V 5A NPT IGBT
生命周期:: 制造商新产品。
数据表:: FGB5N60UNDF 数据表
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更多信息:: FGB5N60UNDF 更多信息

产品属性
属性值

制造商: 仙童半导体

产品分类: IGBT - 单

系列: -

打包: 管子

单位重量: 0.046296 oz

安装方式: 贴片/贴片

包装盒: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

输入类型: 标准

安装型: 表面贴装

供应商-设备-包: TO-263AB (D2PAK)

配置: 单身的

最大功率: 73.5W

反向恢复时间trr: 35ns

电流收集器 Ic-Max: 10A

电压收集器发射极击穿最大值: 600V

IGBT型: 不扩散条约

电流收集器脉冲Icm: 15A

Vce-on-Max-Vge-Ic: 2.4V @ 15V, 5A

开关能源: 80μJ (on), 70μJ (off)

栅极电荷: 12.1nC

Td-on-off-25°C: 5.4ns/25.4ns

测试条件: 400V, 5A, 10 Ohm, 15V

钯功耗: 73.5 W

最高工作温度: + 150 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 600 V

集电极-发射极-饱和-电压: 2.4 V

25-C 时的连续集电极电流: 10 A

栅极-发射极-漏电流: +/- 10 nA

最大栅极发射极电压: +/- 20 V

Tags: FGB5, FGB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGB5N60UNDF 更多信息

Field Stop & Short Circuit Rated IGBTs: ON Semiconductor's Field Stop & short Circuit Rated IGBTs offer a variety of 600 and 650V Insulated Gate Bipolar Transistors (IGBTs) that have a collector current rating between 5A to 60A. This offers optimum performance for welding and PFC or low power inverter driven applications where low conduction, low switching losses and short circuit ruggedness features are essential. Typical applications for these include solar inverters, UPS, SMPS, welder, PFC, home appliance inverter driven (fan motor driver, circulation pump, refrigerator, dish washer), and industrial inverter (sewing machine, CNC).

Market price

型号	制造商	描述	库存	价格
FGB5N60UNDF DISTI # 26733835	ON Semiconductor	600V 5A NPT IGBT	2400	9600:$0.7729 4800:$0.7841 2400:$0.8148 800:$0.8742
FGB5N60UNDF DISTI # FGB5N60UNDF-ND	ON Semiconductor	IGBT 600V 10A 73.5W D2PAK RoHS: Compliant Min Qty: 800 Container: Tube	Temporarily Out of Stock	800:$1.1190
FGB5N60UNDF DISTI # V36:1790_06338232	ON Semiconductor	600V 5A NPT IGBT	0
FGB5N60UNDF DISTI # FGB5N60UNDF	ON Semiconductor	Trans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail (Alt: FGB5N60UNDF) RoHS: Compliant Min Qty: 800	Europe - 0	8000:€0.7199 4800:€0.7709 3200:€0.8309 1600:€0.8999 800:€1.0799
FGB5N60UNDF DISTI # FGB5N60UNDF	ON Semiconductor	Trans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail - Bulk (Alt: FGB5N60UNDF) Min Qty: 368 Container: Bulk	Americas - 0	3680:$0.8389 1840:$0.8599 1104:$0.8709 736:$0.8829 368:$0.8879
FGB5N60UNDF DISTI # FGB5N60UNDF	ON Semiconductor	Trans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail - Tape and Reel (Alt: FGB5N60UNDF) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	8000:$0.7509 4800:$0.7699 3200:$0.7799 1600:$0.7899 800:$0.7959
FGB5N60UNDF DISTI # 57AC1890	ON Semiconductor	IGBT, SINGLE, 600V, 10A, TO-263AB,DC Collector Current:10A,Collector Emitter Saturation Voltage Vce(on):1.9V,Power Dissipation Pd:73.5W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-263AB,No. of Pins:3Pins,RoHS Compliant: Yes	775	1000:$1.1100 500:$1.1700 250:$1.2600 100:$1.4500 50:$1.6400 25:$1.8100 10:$1.9900 1:$2.2500
FGB5N60UNDF DISTI # 95T0027	ON Semiconductor	NPTPIGBT TO263 5A 600V / REEL	0	9600:$0.8230 2400:$0.8470 800:$0.9260 1:$0.9320
FGB5N60UNDF DISTI # 512-FGB5N60UNDF	ON Semiconductor	IGBT Transistors 600V 5A NPT IGBT RoHS: Compliant	2160	1:$1.7900 10:$1.5200 100:$1.2100 500:$1.0600 800:$0.8830 2400:$0.8230 4800:$0.7920 9600:$0.7620
FGB5N60UNDF	ON Semiconductor	Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant	1600	1000:$0.9000 500:$0.9400 100:$0.9800 25:$1.0200 1:$1.1000
FGB5N60UNDF	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant	73530	1000:$0.9000 500:$0.9400 100:$0.9800 25:$1.0200 1:$1.1000
FGB5N60UNDF	Fairchild Semiconductor Corporation		1250
FGB5N60UNDF DISTI # 2860234	ON Semiconductor	IGBT, SINGLE, 600V, 10A, TO-263AB RoHS: Compliant	775	1600:$1.3500 800:$1.6300 100:$1.9900 10:$2.4700 1:$2.7500
FGB5N60UNDF DISTI # 2860234	ON Semiconductor	IGBT, SINGLE, 600V, 10A, TO-263AB RoHS: Compliant	800	500:£0.6870 250:£0.8160 100:£0.9450 25:£1.1800 5:£1.3000
FGB5N60UNDF	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant	Europe - 800

FGB5N60UNDF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes