NGTB30N65IHL2WG

NGTB30N65IHL2WG
Mfr. #:
NGTB30N65IHL2WG
制造商:
ON Semiconductor
描述:
IGBT Transistors 650V/30A FAST IGBT FSII T
生命周期:
制造商新产品。
数据表:
NGTB30N65IHL2WG 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB30N65IHL2WG DatasheetNGTB30N65IHL2WG Datasheet (P4-P6)NGTB30N65IHL2WG Datasheet (P7)
ECAD Model:
更多信息:
NGTB30N65IHL2WG 更多信息
产品属性
属性值
制造商:
安森美半导体
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-247-3
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
650 V
集电极-发射极饱和电压:
1.6 V
最大栅极发射极电压:
20 V
25 C 时的连续集电极电流:
60 A
Pd - 功耗:
300 W
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
打包:
管子
连续集电极电流 Ic 最大值:
60 A
品牌:
安森美半导体
栅极-发射极漏电流:
100 nA
产品类别:
IGBT晶体管
出厂包装数量:
30
子类别:
IGBT
单位重量:
0.211644 oz
Tags
NGTB30N6, NGTB30, NGTB3, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247
***et
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube
***emi
IGBT, 650V 30A FS2 Induction Heating
***ark
650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 650V 60A TO247-3
***ark
Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 30 A low loss
***nell
IGBT, SINGLE, 650V, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***nell
IGBT, SINGLE, N-CH, 650V, 60A, TO-247AC; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No
***ineon
Benefits: Low VCE(ON) and Switching Losses; 5.5s Short Circuit SOA; Square RBSOA; Maximum Junction Temperature 175C; Positive VCE(ON) Temperature Coefficient; Lead-Free, RoHs compliant
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***ark
IGBT, SINGLE, 650V, 60A, TO-247AC
***ineon
Target Applications: Pump; Solar; UPS; Welding
***ment14 APAC
TRANSISTOR, BIPOLAR, N CHANNEL, 650V, TO-247AC
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***S
French Electronic Distributor since 1988
***ure Electronics
IRG4PC40SPbF Series 600 V 31 A N-Channel Standard Speed IGBT - TO-220AC
***p One Stop Global
Trans IGBT Chip N-CH 600V 60A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 940 ns Power dissipation: 160 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):1.5V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 600V, 60A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:60A; Current Temperature:25°C; Device Marking:IRG4PC40SPbF; Fall Time Max:380ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 30 A low loss
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
***ronik
IGBT 650V 30A 1,55V TO247-3 RoHSconf
***el Electronic
Cap Ceramic 470pF 50V C0G 5% Pad SMD 0805 125C Automotive T/R
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
***icroelectronics SCT
Short-circuit rugged IGBT, TO-247, Tube
NGTB 25-75A Insulated Gate Bipolar Transistors
ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged  free wheeling diode with a low forward voltage.Learn More
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ON Semiconductor / KEMET Motor Driver Solutions include ON Semiconductor Compact Intelligent Power Modules and KEMET's broad portfolio of capacitors. ON Semiconductor's 600V Compact Intelligent Power Modules are fully-integrated inverter power stages suitable for driving permanent magnet synchronous motors (PMSM). The modules also drive brushless-DC (BLDC) motors and AC asynchronous motors. KEMET's capacitors are suitable for harsh environments in a variety of dielectrics, terminations, and form factors offering superior performance when coupled with Intelligent Power Module motor drive systems.Learn More
型号 制造商 描述 库存 价格
NGTB30N65IHL2WG
DISTI # NGTB30N65IHL2WG-ND
ON SemiconductorIGBT 600V 70A 300W TO247
RoHS: Compliant
Min Qty: 120
Container: Tube
Temporarily Out of Stock
  • 120:$3.3169
NGTB30N65IHL2WG
DISTI # NGTB30N65IHL2WG
ON SemiconductorTrans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB30N65IHL2WG)
RoHS: Compliant
Min Qty: 210
Container: Tube
Americas - 0
  • 210:$2.0900
  • 270:$2.0900
  • 480:$1.9900
  • 1050:$1.9900
  • 2100:$1.9900
NGTB30N65IHL2WGON Semiconductor 
RoHS: Not Compliant
1159
  • 1000:$2.6500
  • 500:$2.7900
  • 100:$2.9000
  • 25:$3.0300
  • 1:$3.2600
NGTB30N65IHL2WG
DISTI # 863-NGTB30N65IHL2WG
ON SemiconductorIGBT Transistors 650V/30A FAST IGBT FSII T
RoHS: Compliant
184
  • 1:$4.3800
  • 10:$3.7200
  • 100:$3.2300
  • 250:$3.0600
  • 500:$2.7500
  • 1000:$2.3200
  • 2500:$2.2000
图片 型号 描述
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Mfr.#: FFH60UP40S3

OMO.#: OMO-FFH60UP40S3

Rectifiers 400V, 60A Ultrafast
FFH60UP40S3

Mfr.#: FFH60UP40S3

OMO.#: OMO-FFH60UP40S3-ON-SEMICONDUCTOR

Rectifiers 400V, 60A Ultrafast
STTH12T06DI

Mfr.#: STTH12T06DI

OMO.#: OMO-STTH12T06DI-STMICROELECTRONICS

Rectifiers 600V Tandem Diode 7pF 12A If 15ns
可用性
库存:
134
订购:
2117
输入数量:
NGTB30N65IHL2WG的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$4.38
US$4.38
10
US$3.72
US$37.20
100
US$3.23
US$323.00
250
US$3.06
US$765.00
500
US$2.75
US$1 375.00
1000
US$2.32
US$2 320.00
2500
US$2.20
US$5 500.00
5000
US$2.12
US$10 600.00
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