S25FL256SAGMFVR03

Mfr. #:: S25FL256SAGMFVR03
制造商:: Cypress Semiconductor
描述:: Flash Memory 256-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORYWITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 64KB, SO3016 IN T&R PACKING, RESET# + VIO
生命周期:: 制造商新产品。
数据表:: S25FL256SAGMFVR03 数据表
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更多信息:: S25FL256SAGMFVR03 更多信息 S25FL256SAGMFVR03 Product Details

产品属性
属性值

制造商: 赛普拉斯半导体公司

产品分类: 记忆

系列: FL-S

打包: 卷带 (TR) 替代包装

包装盒: 16-SOIC (0.295", 7.50mm Width)

工作温度: -40°C ~ 105°C (TA)

界面: SPI 串行

电压供应: 2.7 V ~ 3.6 V

供应商-设备-包: 16-SO

内存大小: 256M (32M x 8)

内存型: 闪存 - NOR

速度: 133MHz

格式化内存: 闪光

Tags: S25FL256SAGMFVR, S25FL256SAGMFV, S25FL256SAGM, S25FL256SAG, S25FL256SA, S25FL256S, S25FL25, S25FL2, S25FL, S25F, S25

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

S25FL256SAGMFVR03 描述

***ical: NOR Flash Serial-SPI 3V/3.3V 256M-bit 256M x 1 8ns Automotive 16-Pin SOIC W T/R

***ress Semiconductor SCT: Serial NOR Flash Memory, 256 Mbit Density, SOIC-16, RoHS

***ark: TAPE AND REEL / 256-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORYWITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 64KB, SO3016 IN T&R PACKING, RESET# + VIO

S25FL256SAGMFVR03 更多信息

S25FL MirroBit Flash Non-Volatile Memory: Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices: Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.

Market price

型号	制造商	描述	库存	价格
S25FL256SAGMFVR03 DISTI # S25FL256SAGMFVR03-ND	Cypress Semiconductor	IC FLASH 256M SPI 133MHZ 16SOIC RoHS: Compliant Min Qty: 1450 Container: Tape & Reel (TR)	Temporarily Out of Stock	1450:$3.6352
S25FL256SAGMFVR03 DISTI # 727-25FL256SAGMFVR03	Cypress Semiconductor	NOR Flash Nor RoHS: Compliant	0	1450:$3.3000

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