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NTD6415AN-1G

NTD6415AN-1G
Mfr. #:
NTD6415AN-1G
制造商:
ON Semiconductor
描述:
MOSFET NFET IPAK 100V 22A 55MOHM
生命周期:
制造商新产品。
数据表:
NTD6415AN-1G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
NTD6415AN-1G DatasheetNTD6415AN-1G Datasheet (P4-P6)NTD6415AN-1G Datasheet (P7)
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-247-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
100 V
Id - 连续漏极电流：
23 A
Rds On - 漏源电阻：
55 mOhms
Vgs th - 栅源阈值电压：
4 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
29 nC
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
Pd - 功耗：
83 W
配置：
单身的
产品：
功率MOSFET
晶体管类型：
1 N-Channel
品牌：
安森美半导体
正向跨导 - 最小值：
13 S
秋季时间：
37 ns
产品类别：
MOSFET
上升时间：
37 ns
出厂包装数量：
75
子类别：
MOSFET
典型关断延迟时间：
30 ns
典型的开启延迟时间：
10 ns
单位重量：
0.139332 oz
Tags
NTD6415, NTD64, NTD6, NTD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
NTD6415AN-1G N-channel MOSFET Transistor; 23 A; 100 V; 3-Pin IPAK
***emi
Power MOSFET 100V 23A 55 mOhm Single N-Channel DPAK
***et
Trans MOSFET N-CH 100V 23A 3-Pin(3+Tab) IPAK Rail
***r Electronics
Power Field-Effect Transistor, 23A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***emi
Single N-Channel Power MOSFET 100V, 17A, 81mΩ
***et
Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) IPAK Rail
***ark
TUBE / NFET DPAK 100V 17A 81MOHM
***r Electronics
Power Field-Effect Transistor, 17A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***(Formerly Allied Electronics)
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;I-Pak (TO-251AA);PD 66W
***ineon SCT
-100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ure Electronics
Single P-Channel 100 V 205 mOhm 58 nC HEXFET® Power Mosfet - IPAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):205mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***nell
MOSFET, P, I-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.205ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 66W; Transistor Case Style: TO-251AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: TO-251; Current Id Max: -13A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Length: 9.65mm; Lead Spacing: 2.28mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 52A; SMD Marking: IRFU5410PBF; Termination Type: Through Hole; Turn Off Time: 45ns; Turn On Time: 15ns; Voltage Vds Typ: -100V; Voltage Vgs Max: -4V; Voltage Vgs Rds on Measurement: -10V
***(Formerly Allied Electronics)
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.105Ohm; ID 17A; I-Pak (TO-251AA); PD 79W
***ure Electronics
Single N-Channel 100 V 105 mOhm 34 nC HEXFET® Power Mosfet - IPAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***trelec
MOSFET Operating temperature: -55...+175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 79 W
***el Electronic
Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:15A; On Resistance Rds(On):0.105Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 100V, 15A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:100V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:52W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:17A; Junction to Case Thermal Resistance A:2.4°C/W; On State resistance @ Vgs = 10V:105mohm; Package / Case:IPAK; Power Dissipation Pd:52W; Power Dissipation Pd:52W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
***ure Electronics
Single N-Channel 100 V 39 mOhm 37 nC HEXFET® Power Mosfet - TO-251AA
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 100V, 31A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:100V; On Resistance Rds(on):39mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:31A; Junction to Case Thermal Resistance A:1.4°C/W; On State resistance @ Vgs = 10V:39ohm; Package / Case:IPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:125A; Termination Type:Through Hole; Turn Off Time:13ns; Turn On Time:27ns; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
NTD6416ANL-1G N-channel MOSFET Transistor; 19 A; 100 V; 3-Pin IPAK
***emi
Single N-Channel Logic Level Power MOSFET 100V, 19A, 74mΩ
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:71W ;RoHS Compliant: Yes
***i-Key
MOSFET N-CH 100V 16A TO-251AA
***ser
MOSFETs 16a, 100V N-Ch 0.090Ohm
***el Nordic
Contact for details
型号 制造商 描述 库存 价格
NTD6415AN-1G
DISTI # V36:1790_16968330		ON SemiconductorTrans MOSFET N-CH 100V 23A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		3525
  • 2500:$0.2730
  • 1000:$0.2829
  • 500:$0.2940
  • 100:$0.3050
  • 25:$0.4360
  • 1:$0.7700
NTD6415AN-1G
DISTI # NTD6415AN-1GOS-ND		ON SemiconductorMOSFET N-CH 100V 23A IPAK
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
    NTD6415AN-1G
    DISTI # 26068904    		ON SemiconductorTrans MOSFET N-CH 100V 23A 3-Pin(3+Tab) IPAK Tube
    RoHS: Compliant    		3525
    • 2500:$0.2730
    • 1000:$0.2830
    • 500:$0.2940
    • 100:$0.3050
    • 25:$0.4360
    • 9:$0.7700
    NTD6415AN-1G
    DISTI # 70341316    		ON SemiconductorNTD6415AN-1G N-channel MOSFET Transistor,23 A,100 V,3-Pin IPAK
    RoHS: Compliant    		0
    • 10:$1.0600
    • 20:$0.9100
    • 50:$0.8000
    • 100:$0.7200
    NTD6415AN-1GON Semiconductor 
    RoHS: Not Compliant    		750
    • 1000:$0.4900
    • 500:$0.5100
    • 100:$0.5300
    • 25:$0.5600
    • 1:$0.6000
    NTD6415AN-1G
    DISTI # 863-NTD6415AN-1G    		ON SemiconductorMOSFET NFET IPAK 100V 22A 55MOHM
    RoHS: Compliant    		0
      NTD6415AN-1G
      DISTI # 7192917P      		ON SemiconductorMOSFET N-CHANNEL 100V 23A IPAK, TU239
      • 20:£0.4050
      • 40:£0.4000
      • 100:£0.3950
      • 500:£0.3900
      图片 型号 描述
      NTD6416ANLT4G

      Mfr.#: NTD6416ANLT4G

      OMO.#: OMO-NTD6416ANLT4G

      		 MOSFET NFET DPAK 100V 17A 106MO
      NTD6415ANLT4G

      Mfr.#: NTD6415ANLT4G

      OMO.#: OMO-NTD6415ANLT4G

      		 MOSFET 100V HD3E NCH
      NTD6414AN-1G

      Mfr.#: NTD6414AN-1G

      OMO.#: OMO-NTD6414AN-1G-ON-SEMICONDUCTOR

      		 MOSFET N-CH 100V 32A IPAK
      NTD6414ANT4G

      Mfr.#: NTD6414ANT4G

      OMO.#: OMO-NTD6414ANT4G-ON-SEMICONDUCTOR

      		 MOSFET N-CH 100V 32A DPAK
      NTD6415AN

      Mfr.#: NTD6415AN

      OMO.#: OMO-NTD6415AN-1190

      		 全新原装
      NTD6415AN-1G

      Mfr.#: NTD6415AN-1G

      OMO.#: OMO-NTD6415AN-1G-ON-SEMICONDUCTOR

      		 MOSFET N-CH 100V 23A IPAK
      NTD6415ANL

      Mfr.#: NTD6415ANL

      OMO.#: OMO-NTD6415ANL-1190

      		 全新原装
      NTD6415ANT4G

      Mfr.#: NTD6415ANT4G

      OMO.#: OMO-NTD6415ANT4G-ON-SEMICONDUCTOR

      		 MOSFET N-CH 100V 23A DPAK
      NTD6416AN-1G

      Mfr.#: NTD6416AN-1G

      OMO.#: OMO-NTD6416AN-1G-ON-SEMICONDUCTOR

      		 IGBT Transistors MOSFET NFET IPAK 100V 15A 86MOHM
      NTD6416ANL-1G

      Mfr.#: NTD6416ANL-1G

      OMO.#: OMO-NTD6416ANL-1G-ON-SEMICONDUCTOR

      		 IGBT Transistors MOSFET NFET DPAK 100V 15A 86MOHM
      可用性
      库存:
      Available
      订购:
      3500
      输入数量:
      NTD6415AN-1G的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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