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IPW65R150CFDAFKSA1

IPW65R150CFDAFKSA1
Mfr. #:
IPW65R150CFDAFKSA1
制造商:
Infineon Technologies
描述:
MOSFET N-Ch 650V 22.4A TO247-3
生命周期:
制造商新产品。
数据表:
IPW65R150CFDAFKSA1 数据表
交货:
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支付:
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ECAD Model:
更多信息:
IPW65R150CFDAFKSA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-247-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
650 V
Id - 连续漏极电流：
22.4 A
Rds On - 漏源电阻：
150 mOhms
配置：
单身的
商品名：
酷摩
打包：
管子
高度：
21.1 mm
长度：
16.13 mm
系列：
CoolMOS CFDA
晶体管类型：
1 N-Channel
宽度：
5.21 mm
品牌：
英飞凌科技
产品类别：
MOSFET
出厂包装数量：
240
子类别：
MOSFET
第 # 部分别名：
IPW65R150CFDA IPW65R15CFDAXK SP000928274
单位重量：
1.340411 oz
Tags
IPW65R15, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 240, N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 Infineon IPW65R150CFDAFKSA1
***ure Electronics
Single N-Channel 650 V 150 mOhm 86 nC CoolMOS™ Power Mosfet - TO247-3
***ical
Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(3+Tab) TO-247 Tube
***i-Key
MOSFET N-CH 650V TO247
***et Europe
MOS Power Transistors HV (>= 200V)
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型号 制造商 描述 库存 价格
IPW65R150CFDAFKSA1
DISTI # 33111817		Infineon Technologies AGTrans MOSFET N-CH 650V 22.4A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 240:$2.5982
IPW65R150CFDAFKSA1
DISTI # IPW65R150CFDAFKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V TO247
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$4.2475
IPW65R150CFDAFKSA1
DISTI # V36:1790_06378200		Infineon Technologies AGTrans MOSFET N-CH 650V 22.4A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 240000:$2.5140
  • 120000:$2.5180
  • 24000:$3.0390
  • 2400:$4.0690
  • 240:$4.2480
IPW65R150CFDAFKSA1
DISTI # IPW65R150CFDAFKSA1		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPW65R150CFDAFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 120
  • 2400:$2.6360
  • 1200:$2.6837
  • 720:$2.7771
  • 480:$2.8813
  • 240:$2.9892
IPW65R150CFDAFKSA1
DISTI # SP000928274		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP000928274)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€2.2900
  • 500:€2.3900
  • 100:€2.4900
  • 50:€2.5900
  • 25:€2.6900
  • 10:€2.8900
  • 1:€3.5900
IPW65R150CFDAFKSA1
DISTI # 726-IPW65R150CFDAFKS		Infineon Technologies AGMOSFET N-Ch 650V 22.4A TO247-3
RoHS: Compliant		0
  • 1:$5.4900
  • 10:$4.6600
  • 100:$4.0400
  • 250:$3.8300
  • 500:$3.4400
图片 型号 描述
IPW65R110CFDFKSA1

Mfr.#: IPW65R110CFDFKSA1

OMO.#: OMO-IPW65R110CFDFKSA1

 MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
IPW65R110CFDFKSA1

Mfr.#: IPW65R110CFDFKSA1

OMO.#: OMO-IPW65R110CFDFKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V 31.2A TO247
可用性
库存:
Available
订购:
3000
输入数量:
IPW65R150CFDAFKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$5.49
US$5.49
10
US$4.66
US$46.60
100
US$4.04
US$404.00
250
US$3.83
US$957.50
500
US$3.44
US$1 720.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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