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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| BSC082N10LSGATMA1 DISTI # 33723205 | Infineon Technologies AG | Trans MOSFET N-CH 100V 13.8A Automotive 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| BSC082N10LSGATMA1 DISTI # BSC082N10LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC082N10LSGATMA1 DISTI # BSC082N10LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call |
|
| BSC082N10LSGATMA1 DISTI # BSC082N10LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call |
|
| BSC082N10LSGATMA1 DISTI # V36:1790_06378306 | Infineon Technologies AG | Trans MOSFET N-CH 100V 13.8A Automotive 8-Pin TDSON EP T/R RoHS: Compliant | 0 |
|
| BSC082N10LSGATMA1 DISTI # V72:2272_06378306 | Infineon Technologies AG | Trans MOSFET N-CH 100V 13.8A Automotive 8-Pin TDSON EP T/R RoHS: Compliant | 0 | |
| BSC082N10LSGATMA1 DISTI # SP000379609 | Infineon Technologies AG | Trans MOSFET N-CH 100V 13.8A 8-Pin TDSON T/R (Alt: SP000379609) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 5001 |
|
| BSC082N10LSGATMA1 DISTI # BSC082N10LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 13.8A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC082N10LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC082N10LSGATMA1 DISTI # BSC082N10LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 13.8A 8-Pin TDSON T/R - Bulk (Alt: BSC082N10LSGATMA1) RoHS: Compliant Min Qty: 391 Container: Bulk | Americas - 0 |
|
| BSC082N10LSGATMA1 DISTI # 50Y1806 | Infineon Technologies AG | MOSFET Transistor, N Channel, 100 A, 100 V, 0.0068 ohm, 10 V, 1.85 V RoHS Compliant: Yes | 0 |
|
| BSC082N10LS G DISTI # 726-BSC082N10LSG | Infineon Technologies AG | MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2 RoHS: Compliant | 9660 |
|
| BSC082N10LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 13.8A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET RoHS: Compliant | 416 |
|
| BSC082N10LSGATMA1 DISTI # 9064312P | Infineon Technologies AG | MOSFET N-CH 100V 13.8A OPTIMOS TDSON8, RL | 110 |
|
| BSC082N10LSGATMA1 DISTI # 2480741 | Infineon Technologies AG | MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant | 282 |
|
| BSC082N10LSGATMA1 DISTI # 2480741RL | Infineon Technologies AG | MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC082N10LSGATMA1 DISTI # 2480741 | Infineon Technologies AG | MOSFET, N-CH, 100V, 100A, TDSON-8 | 885 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: BSC082N10LS G OMO.#: OMO-BSC082N10LS-G |
MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2 |
|
Mfr.#: BSC082N10LS OMO.#: OMO-BSC082N10LS-1190 |
全新原装 |
|
|
Mfr.#: BSC082N10LSG OMO.#: OMO-BSC082N10LSG-1190 |
Trans MOSFET N-CH 100V 13.8A 8-Pin TDSON T/R (Alt: BSC082N10LS G) |
|
|
Mfr.#: BSC082N10LSGATMA1 , TDK5 |
全新原装 |
|
Mfr.#: BSC082N10LSGATMA1 |
MOSFET N-CH 100V 100A TDSON-8 |
|
|
Mfr.#: BSC082N10LS G OMO.#: OMO-BSC082N10LS-G-128 |
MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2 |
