IRF8707PBF

Mfr. #:: IRF8707PBF
制造商:: Infineon Technologies
描述:: MOSFET N-CH 30V 11A 8-SOIC
生命周期:: 制造商新产品。
数据表:: IRF8707PBF 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:

产品属性
属性值

制造商: 红外线

产品分类: FET - 单

打包: 管子

单位重量: 0.019048 oz

安装方式: 贴片/贴片

包装盒: SOIC-8

技术: 硅

通道数: 1 Channel

配置: 单四漏三源

晶体管型: 1 N-Channel

钯功耗: 2.5 W

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 11 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 17.5 mOhms

晶体管极性: N通道

Qg-门电荷: 6.2 nC

Tags: IRF870, IRF87, IRF8, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF8707PBF 描述

***Components: In a Pack of 10, IRF8707PBF N-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon

***ied Electronics & Automation: IRF8707PBF N-channel MOSFET Transistor,11 A, 30 V, 8-Pin SOIC

***p One Stop Global: Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC Tube

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

***trelec: MOSFET Operating temperature: -55...+150 °C Housing type: SO-8 Polarity: N Power dissipation: 2.5 W

***ical: Trans MOSFET N-CH 30V 11A 8-Pin SOIC Tube

***p One Stop Japan: Trans MOSFET N-CH 30V 11A 8-Pin SOIC

***ment14 APAC: 场效应管, N 通道, MOSFET, 30V, 11A, SOIC;

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

***i-Key: MOSFET N-CH 30V 11A 8-SOIC

***ronik: N-CH 30V 11A 11,9mOhm SO8 RoHSconf

***ukat: N-Ch 30V 11A 2,5W 0,0119R SO8

***ark: Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):11.9mohm; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:30V; Total Gate Charge:6.2nC; No. of Pins:8 ;RoHS Compliant: Yes

***nell: MOSFET, N SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:30V; Cont Current Id:11A; On State Resistance:0.0119ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:1.8V; Case Style:SO-8 (SOIC-8); Termination Type:SMD; Max Voltage Vds:30V; Power Dissipation Pd:2.5W; Pulse Current Idm:88A; Typ Charge Qrr @ Tj = 25°C:6.2nC; Voltage Vds:30V; Transistor Case Style:SO

Market price

型号	制造商	描述	库存	价格
IRF8707PBF DISTI # IRF8707PBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 11A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Tube	Limited Supply - Call
IRF8707PBF DISTI # 58M7423	Infineon Technologies AG	N CHANNEL MOSFET, 30V, 11A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0119ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V RoHS Compliant: Yes	129	1:$0.5360 10:$0.4480 100:$0.2730 500:$0.2430 1000:$0.2110 2500:$0.1810 10000:$0.1670
IRF8707PBF DISTI # 942-IRF8707PBF	Infineon Technologies AG	MOSFET 30V SINGLE N-CH 11.9mOhms 6.2nC RoHS: Compliant	0
IRF8707PBF	International Rectifier	Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA RoHS: Compliant	5225	1000:$0.2000 500:$0.2100 100:$0.2200 25:$0.2300 1:$0.2400
IRF8707PBF DISTI # 495871	Infineon Technologies AG	MOSFET N-CHANNEL 30V 11A HEXFET SOIC8, PK	375	10:£0.4360 50:£0.3700 200:£0.3270 500:£0.2830
IRF8707TRPBF DISTI # IRF8707PBF-GURT	Infineon Technologies AG	N-Ch 30V 11A 2,5W 0,0119R SO8 RoHS: Compliant	0	50:€0.2050 100:€0.1650 500:€0.1450 2000:€0.1395
IRF8707PBF DISTI # 1551900	Infineon Technologies AG	MOSFET, N SO-8 RoHS: Compliant	0	1:$0.9970 10:$0.8340 100:$0.5090 1000:$0.3930 2500:$0.3580

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