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LKK47-06C5

LKK47-06C5
Mfr. #:
LKK47-06C5
制造商:
Littelfuse
描述:
MOSFET 47 Amps 600V
生命周期:
制造商新产品。
数据表:
LKK47-06C5 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
LKK47-06C5 DatasheetLKK47-06C5 Datasheet (P4)
ECAD Model:
产品属性
属性值
制造商：
IXYS
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-264-3
通道数：
2 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
600 V
Id - 连续漏极电流：
47 A
Rds On - 漏源电阻：
45 mOhms
Vgs - 栅源电压：
20 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
480 W
配置：
双重的
频道模式：
增强
商品名：
酷摩
打包：
管子
系列：
LKK47
晶体管类型：
2 N-Channel
品牌：
IXYS
秋季时间：
10 ns
产品类别：
MOSFET
上升时间：
20 ns
出厂包装数量：
25
子类别：
MOSFET
典型关断延迟时间：
100 ns
典型的开启延迟时间：
30 ns
单位重量：
0.264555 oz
Tags
LKK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 47A 5-Pin(5+Tab) ISOPLUS 264
***i-Key
MOSFET 2N-CH 600V 47A ISOPLUS264
***ure Electronics
Single N-Channel 600 V 40 mOhm 107 nC CoolMOS™ Power Mosfet - TO-220-3
***ark
Mosfet, N-Ch, 600V, 50A, To-220-3; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
***ure Electronics
Single N-Channel 600 V 40 mOhm 107 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Mosfet, N-Ch, 600V, 50A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
***ure Electronics
Single N-Channel 600 V 40 mOhm 107 nC CoolMOS™ Power Mosfet - TO-247-3-4
***nell
MOSFET, N-CH, 600V, 50A, TO-247-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
***icroelectronics
N-CHANNEL 600V - 0.050 Ohm - 60A Max247 Zener-Protected MDmesh(TM)Power MOSFET
***ical
Trans MOSFET N-CH 600V 60A 3-Pin (3+Tab) Max247 Tube
***ser
Power MOSFET Transistors N-Ch 600 Volt 60 Amp
***ponent Stockers USA
60 A 600 V 0.055 ohm N-CHANNEL Si POWER MOSFET
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 60A I(D), 600V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***el Electronic
IC DUAL PCMCIA PWR SWITCH 30SSOP
***icroelectronics SCT
Power MOSFETs, 600V, 60A, Max247, Tube
***ment14 APAC
MOSFET, N CH, 600V, 60A, MAX247; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:30V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:560W; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:MAX-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:60A; Package / Case:Max-247; Power Dissipation Pd:560W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package
***r Electronics
Power Field-Effect Transistor, 52A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 600 V 55 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-247
***nell
MOSFET, N-CH, 600V, 52A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe
***icroelectronics
N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package
***r Electronics
Power Field-Effect Transistor, 52A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 600 V 55 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-247-4
***nell
MOSFET, N-CH, 600V, 52A, 150DEG C, 350W; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 350W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)
型号 制造商 描述 库存 价格
LKK47-06C5
DISTI # LKK47-06C5-ND		IXYS CorporationMOSFET 2N-CH 600V 47A ISOPLUS264
RoHS: Compliant
Min Qty: 25
Container: Tube		Temporarily Out of Stock
  • 25:$34.8380
LKK47-06C5
DISTI # 747-LKK47-06C5		IXYS CorporationMOSFET 47 Amps 600V
RoHS: Compliant		26
  • 1:$37.2600
  • 5:$35.4000
  • 10:$34.4700
  • 25:$31.6700
  • 50:$30.3200
  • 100:$29.4400
  • 250:$27.0100
图片 型号 描述
LKK47-06C5

Mfr.#: LKK47-06C5

OMO.#: OMO-LKK47-06C5

 MOSFET 47 Amps 600V
LKK47-06C5

Mfr.#: LKK47-06C5

OMO.#: OMO-LKK47-06C5-IXYS-CORPORATION

 MOSFET 2N-CH 600V 47A ISOPLUS264
可用性
库存:
16
订购:
1999
输入数量:
LKK47-06C5的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$37.26
US$37.26
5
US$35.40
US$177.00
10
US$34.47
US$344.70
25
US$31.67
US$791.75
50
US$30.32
US$1 516.00
100
US$29.44
US$2 944.00
250
US$27.01
US$6 752.50
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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