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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SI1410EDH-T1-E3 DISTI # SI1410EDH-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 20V 2.9A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI1410EDH-T1-E3 DISTI # SI1410EDH-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 20V 2.9A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI1410EDH-T1-E3 DISTI # SI1410EDH-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 20V 2.9A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI1410EDH-T1 DISTI # 781-SI1410EDH | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SI1416EDH-T1-GE3 RoHS: Not compliant | 0 | |
| SI1410EDH-T1-E3 DISTI # 781-SI1410EDH-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SI1416EDH-T1-GE3 RoHS: Compliant | 0 | |
| SI1410EDH-T1-E3 | Vishay Semiconductors | 1953 |
| |
| SI1410EDHT1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 2.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 | |
| SI1416EDH-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 12V Vgs SC70-6 RoHS: Compliant | Americas - 117000 |
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| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: SI1411DH-T1-E3 OMO.#: OMO-SI1411DH-T1-E3 |
MOSFET RECOMMENDED ALT 78-SI1411DH-T1-GE3 |
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Mfr.#: SI1417EDH-T1-GE3 OMO.#: OMO-SI1417EDH-T1-GE3 |
MOSFET |
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Mfr.#: SI1410EDH-T1 , MAX6759UT |
全新原装 |
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Mfr.#: SI1410EDH-T1-GE3 OMO.#: OMO-SI1410EDH-T1-GE3-1190 |
全新原装 |
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Mfr.#: SI1410EDHT1GE3 OMO.#: OMO-SI1410EDHT1GE3-1190 |
Small Signal Field-Effect Transistor, 2.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: SI1410FDH-T1-E3 OMO.#: OMO-SI1410FDH-T1-E3-1190 |
全新原装 |
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Mfr.#: SI14114 OMO.#: OMO-SI14114-1190 |
全新原装 |
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Mfr.#: SI1413DH-T1 OMO.#: OMO-SI1413DH-T1-1190 |
全新原装 |
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Mfr.#: SI1411DH-T1-E3 OMO.#: OMO-SI1411DH-T1-E3-VISHAY |
IGBT Transistors MOSFET 150V 0.52A 1.56W 2.6 ohms @ 10V |
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Mfr.#: SI1411DH-T1-GE3-CUT TAPE |
全新原装 |