IRF7459PBF

IRF7459PBF
Mfr. #:
IRF7459PBF
制造商:
Infineon / IR
描述:
MOSFET 20V 1 N-CH HEXFET 9mOhms 23nC
生命周期:
制造商新产品。
数据表:
IRF7459PBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7459PBF DatasheetIRF7459PBF Datasheet (P4-P6)IRF7459PBF Datasheet (P7-P8)
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
SO-8
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
20 V
Id - 连续漏极电流:
10 A
Rds On - 漏源电阻:
11 mOhms
Vgs - 栅源电压:
12 V
Qg - 门电荷:
23 nC
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
2.5 W
配置:
单身的
频道模式:
增强
打包:
管子
高度:
1.75 mm
长度:
4.9 mm
晶体管类型:
1 N-Channel
类型:
开关管
宽度:
3.9 mm
品牌:
英飞凌/红外
秋季时间:
5 ns
产品类别:
MOSFET
上升时间:
4.5 ns
出厂包装数量:
4085
子类别:
MOSFET
典型关断延迟时间:
20 ns
典型的开启延迟时间:
10 ns
第 # 部分别名:
SP001572154
单位重量:
0.019048 oz
Tags
IRF7459, IRF745, IRF74, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 20V 12A 8-Pin SOIC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:12A; On Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***ment14 APAC
N CHANNEL MOSFET, 20V, 12A, SOIC; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:20V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Junction Temperature Tj Min:-55°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:100A; SMD Marking:F7459; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
型号 制造商 描述 库存 价格
IRF7459PBF
DISTI # IRF7459PBF-ND
Infineon Technologies AGMOSFET N-CH 20V 12A 8-SOIC
RoHS: Compliant
Min Qty: 4085
Container: Tube
Limited Supply - Call
    IRF7459PBF
    DISTI # 70018251
    Infineon Technologies AGMOSFET,20V,10A,9 MOHM,23 NC QG,SO-8
    RoHS: Compliant
    0
    • 4085:$0.5200
    IRF7459PBFInternational Rectifier*** FREE SHIPPING ORDERS OVER $100 *** 12 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA20
    • 16:$1.3200
    • 4:$1.6500
    • 1:$1.9800
    IRF7459PBF
    DISTI # 9102620
    Infineon Technologies AGMOSFET, N, LOGIC, SO-8
    RoHS: Compliant
    0
    • 1000:$0.9890
    • 500:$1.0600
    • 250:$1.1200
    • 100:$1.2500
    • 10:$1.6300
    • 1:$2.3700
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    可用性
    库存:
    Available
    订购:
    5000
    输入数量:
    IRF7459PBF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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