SI7860DP-T1-E3

Mfr. #:: SI7860DP-T1-E3
制造商:: Vishay / Siliconix
描述:: MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
生命周期:: 制造商新产品。
数据表:: SI7860DP-T1-E3 数据表
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HTML Datasheet:: SI7860DP-T1-E3 Datasheet SI7860DP-T1-E3 Datasheet (P4-P5)
ECAD Model:

产品属性
属性值

制造商：: 威世

产品分类：: MOSFET

RoHS：: E

技术：: 硅

商品名：: 沟槽场效应晶体管

打包：: 卷轴

系列：: SI7

品牌：: 威世 / Siliconix

产品类别：: MOSFET

出厂包装数量：: 3000

子类别：: MOSFET

第 # 部分别名：: SI7860DP-E3

单位重量：: 0.017870 oz

Tags: SI7860DP-T, SI7860D, SI7860, SI786, SI78, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7860DP-T1-E3 描述

***ical: Trans MOSFET N-CH 30V 11A 8-Pin PowerPAK SO T/R

***ied Electronics & Automation: N-CHANNEL 30V MOSFET; 8MOHM @ 10V

***S: MOSFET N-CHNL REDUCED QG FAST SWITCHING

***ser: N-Channel MOSFETs N-Ch 30V 18A

***ment14 APAC: TRANSISTOR, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:18A; Package / Case:SOIC-8; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

Market price

型号	制造商	描述	库存	价格
SI7860DP-T1-E3 DISTI # SI7860DP-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 11A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SI7860DP-T1-E3 DISTI # SI7860DP-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 11A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI7860DP-T1-E3 DISTI # SI7860DP-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 11A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI7860DP-T1-E3 DISTI # 70026285	Vishay Siliconix	N-CHANNEL 30V MOSFET,8MOHM @ 10V RoHS: Compliant	0	3000:$1.5200 6000:$1.4500 9000:$1.3800
SI7860DP-T1-E3 DISTI # 781-SI7860DP-T1-E3	Vishay Intertechnologies	MOSFET 30V 18A 5.0W 8.0mohm @ 10V RoHS: Compliant	0
SI7860DP-T1 DISTI # 781-SI7860DP	Vishay Intertechnologies	MOSFET 30V 18A 5.0W 8.0mohm @ 10V RoHS: Not compliant	0
SI7860DP-T1-E3	Vishay Siliconix		2948
SI7860DP-T1-E3 DISTI # 1653688	Vishay Intertechnologies	TRANSISTOR, MOSFET RoHS: Compliant	0	1:$2.4700 10:$2.3400 50:$2.1600 100:$1.9600 500:$1.6600 1000:$1.4700

图片	型号	描述
	Mfr.#: SI7860DP-T1-E3 OMO.#: OMO-SI7860DP-T1-E3	MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
	Mfr.#: SI7860DP OMO.#: OMO-SI7860DP-1190	全新原装
	Mfr.#: SI7860DP-T1 OMO.#: OMO-SI7860DP-T1-1190	MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
	Mfr.#: SI7860DP-T1-CR OMO.#: OMO-SI7860DP-T1-CR-1190	全新原装
	Mfr.#: SI7860DP-T1-E3 OMO.#: OMO-SI7860DP-T1-E3-VISHAY	MOSFET N-CH 30V 11A PPAK SO-8
	Mfr.#: SI7860DP-T1-GE3 OMO.#: OMO-SI7860DP-T1-GE3-VISHAY	MOSFET N-CH 30V 11A PPAK SO-8

SI7860DP-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes