SIHF30N60E-E3

Mfr. #:: SIHF30N60E-E3
制造商:: Vishay / Siliconix
描述:: IGBT Transistors MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
生命周期:: 制造商新产品。
数据表:: SIHF30N60E-E3 数据表
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更多信息:: SIHF30N60E-E3 更多信息

产品属性
属性值

制造商: 威世

产品分类: 集成电路芯片

系列: E

打包: 管子

单位重量: 0.211644 oz

安装方式: 通孔

商品名: E系列

包装盒: TO-220-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 37 W

最高工作温度: + 150 C

最低工作温度: - 55 C

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 29 A

Vds-漏-源-击穿电压: 600 V

Rds-On-Drain-Source-Resistance: 125 mOhms

晶体管极性: N通道

Qg-门电荷: 85 nC

正向跨导最小值: 5.4 S

Tags: SIHF3, SIHF, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHF30N60E-E3 描述

***et: Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220 Full-Pak

***ure Electronics: E-Series N-Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet - TO-220FP

***nell: MOSFET, N CH, 600V, 29A, TO-220 FULLPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:37W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

SIHF30N60E-E3 更多信息

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

型号	制造商	描述	库存	价格
SIHF30N60E-E3 DISTI # V36:1790_14140830	Vishay Intertechnologies	Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220FP RoHS: Compliant	0	1000000:$3.0000 500000:$3.0050 100000:$3.9020 10000:$5.8200 1000:$6.1600
SIHF30N60E-E3 DISTI # SIHF30N60E-E3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220 Full-Pak - Tape and Reel (Alt: SIHF30N60E-E3) RoHS: Not Compliant Min Qty: 1000 Container: Reel	Americas - 0	6000:$2.7900 10000:$2.7900 4000:$2.8900 2000:$3.0900 1000:$3.1900
SIHF30N60E-GE3 DISTI # 78-SIHF30N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant	0	1:$5.8300 10:$4.9400 100:$4.2300 250:$4.1700 500:$4.1600 1000:$3.0800 2500:$2.9200
SIHF30N60E-E3 DISTI # 781-SIHF30N60E-E3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant	0	1:$6.1600 10:$5.0900 100:$4.2000 250:$4.1900 500:$4.1800
SIHF30N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant	Americas -
SIHF30N60E-E3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant	Americas -
SIHF30N60E-E3 DISTI # 7689322	Vishay Intertechnologies	SIHF30N60E-E3 N-Channel MOSFET, 29 A, 600 V E Series, 3-Pin TO-220FP Vishay, EA Min Qty: 1 Container: Bulk	131	1:$7.7900 5:$7.1980
SIHF30N60EE3	Vishay Intertechnologies	Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	Europe - 1000

图片	型号	描述
	Mfr.#: SIHF30N60E-GE3 OMO.#: OMO-SIHF30N60E-GE3	MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
	Mfr.#: SIHF30N60E-E3 OMO.#: OMO-SIHF30N60E-E3	MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
	Mfr.#: SIHF30N60E-E3 OMO.#: OMO-SIHF30N60E-E3-126	IGBT Transistors MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
	Mfr.#: SIHF30N60E-GE3 OMO.#: OMO-SIHF30N60E-GE3-VISHAY	RF Bipolar Transistors MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS

SIHF30N60E-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes