IPW60R070CFD7XKSA1

IPW60R070CFD7XKSA1
Mfr. #:
IPW60R070CFD7XKSA1
制造商:
Infineon Technologies
描述:
MOSFET HIGH POWER_NEW
生命周期:
制造商新产品。
数据表:
IPW60R070CFD7XKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IPW60R070CFD7XKSA1 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
通孔
包装/案例:
TO-247-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
600 V
Id - 连续漏极电流:
31 A
Rds On - 漏源电阻:
57 mOhms
Vgs th - 栅源阈值电压:
3.5 V
Vgs - 栅源电压:
20 V
Qg - 门电荷:
67 nC
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
156 W
配置:
单身的
频道模式:
增强
商品名:
酷摩
打包:
管子
系列:
CoolMOS CFD7
晶体管类型:
1 N-Channel
品牌:
英飞凌科技
秋季时间:
6 ns
产品类别:
MOSFET
上升时间:
23 ns
出厂包装数量:
240
子类别:
MOSFET
典型关断延迟时间:
99 ns
典型的开启延迟时间:
26 ns
第 # 部分别名:
IPW60R070CFD7 SP001617990
Tags
IPW60R070C, IPW60R070, IPW60R07, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 247-3
***ark
Mosfet, N-Ch, 600V, 31A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.057Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型号 制造商 描述 库存 价格
IPW60R070CFD7XKSA1
DISTI # V99:2348_18786389
Infineon Technologies AGHIGH POWER_NEW230
  • 500:$4.6710
  • 250:$4.9240
  • 100:$5.2050
  • 25:$6.1750
  • 10:$6.4710
  • 1:$7.8650
IPW60R070CFD7XKSA1
DISTI # V36:1790_18786389
Infineon Technologies AGHIGH POWER_NEW0
  • 240000:$3.5240
  • 120000:$3.5290
  • 24000:$4.2970
  • 2400:$5.9060
  • 240:$6.1900
IPW60R070CFD7XKSA1
DISTI # IPW60R070CFD7XKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
384In Stock
  • 720:$4.9237
  • 240:$5.6543
  • 25:$6.5120
  • 10:$6.8300
  • 1:$7.5600
IPW60R070CFD7XKSA1
DISTI # 32740012
Infineon Technologies AGHIGH POWER_NEW230
  • 2:$7.8650
IPW60R070CFD7XKSA1
DISTI # 33637520
Infineon Technologies AGHIGH POWER_NEW75
  • 3:$3.7891
IPW60R070CFD7XKSA1
DISTI # IPW60R070CFD7XKSA1
Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 247-3 - Rail/Tube (Alt: IPW60R070CFD7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 2400:$3.7900
  • 1440:$3.8900
  • 960:$3.9900
  • 480:$4.1900
  • 240:$4.2900
IPW60R070CFD7XKSA1
DISTI # SP001617990
Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 247-3 (Alt: SP001617990)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€3.4900
  • 500:€3.5900
  • 100:€3.6900
  • 50:€3.7900
  • 25:€3.9900
  • 10:€4.3900
  • 1:€5.3900
IPW60R070CFD7XKSA1
DISTI # 43AC9330
Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.057ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes141
  • 500:$4.7300
  • 250:$5.1900
  • 100:$5.4300
  • 50:$5.8500
  • 25:$6.2600
  • 10:$6.5700
  • 1:$7.2600
IPW60R070CFD7XKSA1
DISTI # 726-IPW60R070CFD7XKS
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
7414
  • 1:$7.1900
  • 10:$6.5000
  • 25:$6.2000
  • 100:$5.3800
  • 250:$5.1400
  • 500:$4.6800
IPW60R070CFD7XKSA1
DISTI # 2807983
Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-247861
  • 100:£4.1500
  • 50:£4.4700
  • 10:£4.7800
  • 5:£5.5400
  • 1:£6.0700
IPW60R070CFD7XKSA1
DISTI # 2807983
Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-247
RoHS: Compliant
191
  • 250:$6.0600
  • 100:$6.1700
  • 50:$6.5100
  • 10:$6.8900
  • 5:$7.7900
  • 1:$8.3300
图片 型号 描述
ZXGD3005E6TA

Mfr.#: ZXGD3005E6TA

OMO.#: OMO-ZXGD3005E6TA

Gate Drivers 10A GATE DRIVER 25V VCC 25V VIN
CDSOT23-SM712

Mfr.#: CDSOT23-SM712

OMO.#: OMO-CDSOT23-SM712

TVS Diodes / ESD Suppressors SOT-23 7V400W Low Capacitance
NSS60600MZ4T1G

Mfr.#: NSS60600MZ4T1G

OMO.#: OMO-NSS60600MZ4T1G

Bipolar Transistors - BJT LO V PNP TRANSISTOR 60V 6.0A
IPW60R105CFD7XKSA1

Mfr.#: IPW60R105CFD7XKSA1

OMO.#: OMO-IPW60R105CFD7XKSA1

MOSFET HIGH POWER_NEW
SIHG80N60E-GE3

Mfr.#: SIHG80N60E-GE3

OMO.#: OMO-SIHG80N60E-GE3

MOSFET 600V Vds 30V Vgs TO-247AC
IPW60R080P7XKSA1

Mfr.#: IPW60R080P7XKSA1

OMO.#: OMO-IPW60R080P7XKSA1

MOSFET HIGH POWER_NEW
STW36N60M6

Mfr.#: STW36N60M6

OMO.#: OMO-STW36N60M6

MOSFET N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh M6 Power MOSFET in a TO-247 package
RC0805JR-070RL

Mfr.#: RC0805JR-070RL

OMO.#: OMO-RC0805JR-070RL

Thick Film Resistors - SMD ZERO OHM JUMPER
B59850C0120A070

Mfr.#: B59850C0120A070

OMO.#: OMO-B59850C0120A070-EPCOS

Thermistor PTC 10 Ohm 25% 2-Pin Radial Cardboard Strip
CDSOT23-SM712

Mfr.#: CDSOT23-SM712

OMO.#: OMO-CDSOT23-SM712-BOURNS

全新原装
可用性
库存:
Available
订购:
1990
输入数量:
IPW60R070CFD7XKSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$7.19
US$7.19
10
US$6.50
US$65.00
25
US$6.20
US$155.00
100
US$5.38
US$538.00
250
US$5.14
US$1 285.00
500
US$4.68
US$2 340.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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