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IXDP35N60B

IXDP35N60B
Mfr. #:
IXDP35N60B
制造商:
Littelfuse
描述:
IGBT Transistors 35 Amps 600V
生命周期:
制造商新产品。
数据表:
IXDP35N60B 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXDP35N60B DatasheetIXDP35N60B Datasheet (P4)
ECAD Model:
产品属性
属性值
制造商：
IXYS
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-220-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
600 V
集电极-发射极饱和电压：
2.1 V
最大栅极发射极电压：
20 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
系列：
IXD_35N60
打包：
管子
连续集电极电流 Ic 最大值：
60 A
高度：
9.15 mm
长度：
10.66 mm
宽度：
4.82 mm
品牌：
IXYS
连续集电极电流：
60 A
产品类别：
IGBT晶体管
出厂包装数量：
50
子类别：
IGBT
单位重量：
0.081130 oz
Tags
IXDP, IXD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 600V 60A 250W TO220AB
***el Nordic
Contact for details
***p One Stop Global
Trans IGBT Chip N-CH 600V 60A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***el Electronic
In a Pack of 5, Infineon IRG4BC40SPBF IGBT, 60 A 600 V, 3-Pin TO-220AB
***ure Electronics
Insulated Gate Bipolar Transistor Through Hole IGBT - TO-220-3
***itex
Transistor; IGBT; 600V; 60A; 160W; -55+150 deg.C; THT; TO220
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 380 ns Power dissipation: 160 W
***nell
IGBT, 600V, 60A, TO-220AB-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.68V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3
***p One Stop Global
Trans IGBT Chip N-CH 600V 49A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***eco
Transistor IGBT Chip Negative Channel 600 Volt 49A 3-Pin(3+Tab) TO-220AB
***ure Electronics
IRG4BC40FPbF Series 600 V 27 A N-Channel Fast Speed IGBT - TO-220AB
***ineon SCT
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
*** Stop Electro
Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 170 ns Power dissipation: 160 W
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:49A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:49A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:200A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***(Formerly Allied Electronics)
IRGB30B60KPBF, IGBT Transistor, 78 A 600 V, 3-Pin TO-220AB
***ow.cn
Trans IGBT Chip N-CH 600V 78A 370000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V UltraFast 10-30 kHz IGBT in a TO-220AB package, TO220-3, RoHS
***ment14 APAC
IGBT, 600V, 78A, TO-220; Transistor Type:IGBT; DC Collector Current:78A; Collector Emitter Voltage Vces:2.35V; Power Dissipation Pd:370W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:78A; Fall Time Max:40ns; Fall Time tf:40ns; Package / Case:TO-220AB; Power Dissipation Max:370W; Power Dissipation Pd:370W; Power Dissipation Pd:370W; Pulsed Current Icm:120A; Rise Time:28ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
HGTP12N60A4D Series 600 V 54 A N-Channel IGBT with Anti Parallel Hyperfast Diode
***r Electronics
Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220; DC Collector Current: 54A; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating
***rchild Semiconductor
The HGTP12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
***ical
Trans IGBT Chip N=-CH 600V 70A 290000mW 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
HGTP20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-220AB
***rchild Semiconductor
The HGTP20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
***ment14 APAC
IGBT, N, TO-220; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:GCE; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Power Dissipation Ptot Max:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ark
FIELD STOP IGBT, 600V, 10A, 3-TO-220; Transistor Type:IGBT; DC Collector Current
***Yang
Trans IGBT Chip N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***r Electronics
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop IGBTs offer the optimum performance for HID ballast where low conduction losses are essential.
***nell
IGBT,N CH,600V,10A,T220AB; Transistor Type:IGBT; DC Collector Current:10A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:83W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:83W
型号 制造商 描述 库存 价格
IXDP35N60B
DISTI # IXDP35N60B-ND		IXYS CorporationIGBT 600V 60A 250W TO220AB
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$5.4244
IXDP35N60B
DISTI # 747-IXDP35N60B		IXYS CorporationIGBT Transistors 35 Amps 600V
RoHS: Compliant		0
  • 1:$6.6100
  • 10:$5.9500
  • 25:$5.4300
  • 50:$4.9600
  • 100:$4.9000
  • 250:$4.4600
  • 500:$4.1000
  • 1000:$3.5700
图片 型号 描述
IXDP35N60B

Mfr.#: IXDP35N60B

OMO.#: OMO-IXDP35N60B

 IGBT Transistors 35 Amps 600V
IXDP35N60B

Mfr.#: IXDP35N60B

OMO.#: OMO-IXDP35N60B-IXYS-CORPORATION

 IGBT Transistors 35 Amps 600V
可用性
库存:
Available
订购:
5000
输入数量:
IXDP35N60B的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$6.61
US$6.61
10
US$5.95
US$59.50
25
US$5.43
US$135.75
50
US$4.96
US$248.00
100
US$4.90
US$490.00
250
US$4.46
US$1 115.00
500
US$4.10
US$2 050.00
1000
US$3.57
US$3 570.00
2500
US$3.53
US$8 825.00
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