IPB60R080P7ATMA1

Mfr. #:: IPB60R080P7ATMA1
制造商:: Infineon Technologies
描述:: MOSFET N-CH TO263-3
生命周期:: 制造商新产品。
数据表:: IPB60R080P7ATMA1 数据表
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更多信息:: IPB60R080P7ATMA1 更多信息

产品属性
属性值

Tags: IPB60R0, IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R080P7ATMA1 描述

***ure Electronics: Single N-Channel 600 V 80 mOhm 51 nC CoolMOS Power Mosfet - D2PAK

***ineon: Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting

***ark: Mosfet, N-Ch, 600V, 37A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

IPB60R080P7ATMA1 更多信息

600V CoolMOS P7 MOSFETs: Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

型号	制造商	描述	库存	价格
IPB60R080P7ATMA1 DISTI # V72:2272_18787575	Infineon Technologies AG	HIGH POWER_NEW	1161	1000:$2.6860 500:$3.3980 250:$3.4070 100:$3.7350 25:$3.8760 10:$4.3070 1:$5.5704
IPB60R080P7ATMA1 DISTI # IPB60R080P7ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1733In Stock	500:$3.4604 100:$4.0650 10:$4.9610 1:$5.5200
IPB60R080P7ATMA1 DISTI # IPB60R080P7ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1733In Stock	500:$3.4604 100:$4.0650 10:$4.9610 1:$5.5200
IPB60R080P7ATMA1 DISTI # IPB60R080P7ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	2000:$2.6985 1000:$2.8334
IPB60R080P7ATMA1 DISTI # 26413980	Infineon Technologies AG	HIGH POWER_NEW	1161	1000:$2.6860 500:$3.3980 250:$3.4070 100:$3.7350 25:$3.8760 10:$4.3070 3:$5.5704
IPB60R080P7ATMA1 DISTI # 32684970	Infineon Technologies AG	HIGH POWER_NEW	1000	1000:$3.4933
IPB60R080P7ATMA1 DISTI # IPB60R080P7ATMA1	Infineon Technologies AG	HIGH POWER_NEW - Tape and Reel (Alt: IPB60R080P7ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	6000:$2.3900 10000:$2.3900 4000:$2.4900 2000:$2.5900 1000:$2.6900
IPB60R080P7ATMA1 DISTI # 49AC7994	Infineon Technologies AG	MOSFET, N-CH, 600V, 37A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:37A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	419	500:$3.2300 250:$3.6000 100:$3.7900 50:$3.9800 25:$4.1800 10:$4.3700 1:$5.1500
IPB60R080P7ATMA1 DISTI # 726-IPB60R080P7ATMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	1613	1:$5.1000 10:$4.3300 100:$3.7500 250:$3.5600 500:$3.2000 1000:$2.6900 2000:$2.5600
IPB60R080P7ATMA1	Infineon Technologies AG	Single N-Channel 600 V 80 mOhm 51 nC CoolMOS Power Mosfet - D2PAK RoHS: Not Compliant	1000Reel	1000:$2.5000
IPB60R080P7ATMA1 DISTI # 2841642	Infineon Technologies AG	MOSFET, N-CH, 600V, 37A, TO-263 RoHS: Compliant	399	1000:$3.8600 500:$3.9400 250:$4.1600 100:$4.3900 10:$4.9600 1:$5.3100
IPB60R080P7ATMA1 DISTI # 2841642	Infineon Technologies AG	MOSFET, N-CH, 600V, 37A, TO-263	424	500:£2.4800 250:£2.7800 100:£2.9200 10:£3.3600 1:£4.4000
IPB60R080P7ATMA1 DISTI # XSFP00000131402	Infineon Technologies AG	RoHS: Compliant	2000 in Stock0 on Order	2000:$2.7800 1000:$2.9400

IPB60R080P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes