CMPA601C025F

CMPA601C025F
Mfr. #:
CMPA601C025F
制造商:
N/A
描述:
RF Amplifier 6.0-12.0GHz 25Watt GaN Flange
生命周期:
制造商新产品。
数据表:
CMPA601C025F 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
CMPA601C025F 更多信息
产品属性
属性值
制造商
科锐
产品分类
射频放大器
Tags
CMPA6, CMPA, CMP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
RF Amp Module Single Power Amp 12GHz 28V 11-Pin Case 440213
***fspeed
25-W; 6.0 - 12.0-GHz; GaN MMIC; Power Amplifier
***fspeed SCT
Aerospace & Defense, 28 V, 12 GHz, 25W, Flange, RoHS
GaN HEMT based MMICs
Cree GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) based MMICs (monolithic microwave integrated circuits) enable extremely wide bandwidths to be achieved in small footprint packages. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.Learn More
X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
型号 制造商 描述 库存 价格
CMPA601C025F-TB
DISTI # CMPA601C025F-TB-ND
WolfspeedEVAL BOARD FOR CMPA601C025F
RoHS: Compliant
Min Qty: 2
Container: Bulk
Temporarily Out of Stock
  • 2:$715.0000
CMPA601C025F
DISTI # 941-CMPA601C025F
Cree, Inc.RF Amplifier GaN MMIC Power Amp 6.0-12.0GHz, 25 Watt
RoHS: Compliant
99
  • 1:$848.5000
CMPA601C025F-TB
DISTI # 941-CMPA601C025F-TB
Cree, Inc.RF Amplifier Test Board without GaN MMIC
RoHS: Compliant
1
  • 1:$715.0000
CMPA601C025F
DISTI # CMPA601C025F
WolfspeedRF & MW POWER AMPLIFIER
RoHS: Compliant
0
  • 50:$848.5000
CMPA601C025F-TB
DISTI # CMPA601C025F-TB
WolfspeedRF & MW AMPLIFIER EVALUATION BOARD/DESIGNER KIT
RoHS: Compliant
2
  • 2:$715.0000
图片 型号 描述
CMPA601C025F

Mfr.#: CMPA601C025F

OMO.#: OMO-CMPA601C025F

RF Amplifier GaN MMIC Power Amp 6.0-12.0GHz, 25 Watt
CMPA601C025F-TB

Mfr.#: CMPA601C025F-TB

OMO.#: OMO-CMPA601C025F-TB

RF Amplifier Test Board without GaN MMIC
CMPA601C025D

Mfr.#: CMPA601C025D

OMO.#: OMO-CMPA601C025D-1190

全新原装
CMPA601C025F

Mfr.#: CMPA601C025F

OMO.#: OMO-CMPA601C025F-279

RF Amplifier 6.0-12.0GHz 25Watt GaN Flange
CMPA601C025F-TB

Mfr.#: CMPA601C025F-TB

OMO.#: OMO-CMPA601C025F-TB-WOLFSPEED

EVAL BOARD FOR CMPA601C025F
可用性
库存:
Available
订购:
4000
输入数量:
CMPA601C025F的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$1.00
US$1.00
10
US$1.00
US$10.00
100
US$1.00
US$100.00
500
US$1.00
US$500.00
1000
US$1.00
US$1 000.00
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