FF600R12ME4PB11BOSA1

Mfr. #:: FF600R12ME4PB11BOSA1
制造商:: Infineon Technologies
描述:: IGBT MODULE VCES 600V 600A
生命周期:: 制造商新产品。
数据表:: FF600R12ME4PB11BOSA1 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

产品属性
属性值

Tags: FF600R12ME4PB, FF600R12ME4P, FF600R12ME4, FF600R12M, FF600R12, FF600R1, FF600, FF60, FF6

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FF600R12ME4PB11BOSA1 描述

***ure Electronics: 1200V, 600A IGBT Module

***i-Key: IGBT MODULE VCES 600V 600A

***ark: MEDIUM POWER ECONO

***nell: IGBT, MODULE, N-CH, 1.2KV, 600A; Biegunowość tranzystora:Kanał N; Prąd kolektora DC:600A; Napięcie nasycenia kolektor - emiter Vce(on):1.75V; Straty mocy Pd:-; Napięcie kolektor - emiter V(br)ceo:1.2kV; Rodzaj obudowy tranzystora:Module; Liczba pinów:-; Temperatura robocza, maks.:150°C; Asortyment produktów:EconoDUAL 3 Series; Substancje SVHC:No SVHC (27-Jun-2018)

***ment14 APAC: Prices include import duty and tax. IGBT, MODULE, N-CH, 1.2KV, 600A; Transistor Polarity:N Channel; DC Collector Current:600A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:EconoDUAL 3 Series; SVHC:No SVHC (27-Jun-2018)

***ineon: EconoDUAL 3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled HE Diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material. | Summary of Features: Low V CEsat; T vj op = 150C; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; ups; induction-heating; welding

Market price

型号	制造商	描述	库存	价格
FF600R12ME4PB11BOSA1 DISTI # V36:1790_18204417	Infineon Technologies AG	FF600R12ME4PB11BOSA1	0
FF600R12ME4PB11BOSA1 DISTI # FF600R12ME4PB11BOSA1-ND	Infineon Technologies AG	IGBT MODULE VCES 600V 600A RoHS: Not compliant Min Qty: 6 Container: Bulk	Temporarily Out of Stock	6:$242.5483
FF600R12ME4PB11BOSA1 DISTI # FF600R12ME4PB11BOSA1	Infineon Technologies AG	MEDIUM POWER ECONO - Trays (Alt: FF600R12ME4PB11BOSA1) RoHS: Compliant Min Qty: 6 Container: Tray	Americas - 6	60:$201.6900 30:$206.6900 18:$211.8900 12:$217.3900 6:$220.2900
FF600R12ME4PB11BOSA1 DISTI # 34AC1492	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 600A,Transistor Polarity:N Channel,DC Collector Current:600A,Collector Emitter Saturation Voltage Vce(on):1.75V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes	4	25:$201.3500 10:$214.2000 5:$217.3800 1:$220.6600
FF600R12ME4P_B11 DISTI # 641-FF600R12ME4P_B11	Infineon Technologies AG	IGBT Modules	6	1:$242.8100 5:$236.9700 10:$231.0800 25:$227.8400
FF600R12ME4PB11BOSA1 DISTI # 2781235	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 600A	4	5:£178.0000 1:£182.0000
FF600R12ME4PB11BOSA1 DISTI # 2781235	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 600A RoHS: Compliant	4	5:$373.1400 1:$386.9600

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