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SCT2H12NZGC11

SCT2H12NZGC11
Mfr. #:
SCT2H12NZGC11
制造商:
Rohm Semiconductor
描述:
MOSFET N-CH 1700V 3.7A
生命周期:
制造商新产品。
数据表:
SCT2H12NZGC11 数据表
交货:
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ECAD Model:
更多信息:
SCT2H12NZGC11 更多信息
产品属性
属性值
Tags
SCT2H, SCT2, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFM
***ical
Trans MOSFET N-CH SiC 1.7KV 3.7A 3-Pin(3+Tab) TO-3PFM Tube
***ark
Mosfet, N-Ch, 1.7Kv, To-3Pfm; Mosfet Configuration:single; Transistor Polarity:n Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:1.7Kv; On Resistance Rds(On):1.15Ohm; No. Of Pins:3Pins; Threshold Voltage Vgs:2.8V Rohs Compliant: Yes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
1700V N-Channel SiC Power MOSFET
ROHM 1700V N-Channel SiC Power MOSFET offers a drain-source breakdown voltage of 1700V and a continuous drain current of 3.7A. The MOSFET features a low on-resistance, fast switching speed, and long creepage distance, making it ideal for auxiliary power supplies and switch mode power supplies. Learn More
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
Electronic Vehicle (EV) Solutions
ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.
型号 制造商 描述 库存 价格
SCT2H12NZGC11
DISTI # 30614319		ROHM Semiconductor0504
  • 4:$7.6625
SCT2H12NZGC11
DISTI # SCT2H12NZGC11-ND		ROHM SemiconductorMOSFET N-CH 1700V 3.7A
RoHS: Compliant
Min Qty: 1
Container: Tube		668In Stock
  • 2520:$3.3250
  • 510:$3.8750
  • 120:$4.4500
  • 30:$5.1250
  • 10:$5.3750
  • 1:$5.9500
SCT2H12NZGC11
DISTI # C1S625901603314		ROHM SemiconductorMOSFETs504
  • 200:$4.4000
  • 50:$5.3100
  • 10:$5.3600
  • 1:$6.1300
SCT2H12NZGC11
DISTI # SCT2H12NZGC11		ROHM SemiconductorTrans MOSFET N-CH 1.7KV 3.7A 3-Pin TO-3PFM Tube (Alt: SCT2H12NZGC11)
Min Qty: 450		Americas - 0
  • 2700:$3.1900
  • 4500:$3.1900
  • 1800:$3.3900
  • 900:$3.6900
  • 450:$3.8900
SCT2H12NZGC11
DISTI # SCT2H12NZGC11		ROHM SemiconductorTrans MOSFET N-CH 1.7KV 3.7A 3-Pin TO-3PFM Tube (Alt: SCT2H12NZGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube		Asia - 0
    SCT2H12NZGC11
    DISTI # SCT2H12NZGC11    		ROHM SemiconductorTrans MOSFET N-CH 1.7KV 3.7A 3-Pin TO-3PFM Tube (Alt: SCT2H12NZGC11)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1000:€3.3800
    • 500:€3.4500
    • 250:€3.5200
    • 100:€3.5900
    • 10:€3.6700
    • 1:€4.8700
    SCT2H12NZGC11
    DISTI # SCT2H12NZGC11    		ROHM SemiconductorTrans MOSFET N-CH 1.7KV 3.7A 3-Pin TO-3PFM Tube - Rail/Tube (Alt: SCT2H12NZGC11)
    RoHS: Compliant
    Min Qty: 30
    Container: Tube    		Americas - 0
      SCT2H12NZGC11
      DISTI # 79Y4716      		ROHM SemiconductorTrans MOSFET N-CH 1.7KV 3.7A 3-Pin TO-3PFM Tube - Bulk (Alt: 79Y4716)
      RoHS: Compliant
      Min Qty: 1
      Container: Bulk      		Americas - 0
      • 500:$3.8800
      • 250:$4.2600
      • 100:$4.4500
      • 50:$4.7900
      • 25:$5.1300
      • 10:$5.3800
      • 1:$5.9500
      SCT2H12NZGC11
      DISTI # 79Y4716      		ROHM SemiconductorMOSFET, N-CH, 1.7KV, TO-3PFM,Transistor Polarity:N Channel,Continuous Drain Current Id:3.7A,Drain Source Voltage Vds:1.7kV,On Resistance Rds(on):1.15ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:2.8V,No. of Pins:3PinsRoHS Compliant: Yes1
      • 250:$4.2900
      • 100:$4.4900
      • 50:$4.8300
      • 25:$5.1700
      • 10:$5.4200
      • 1:$6.0000
      SCT2H12NZGC11
      DISTI # 755-SCT2H12NZGC11      		ROHM SemiconductorMOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC
      RoHS: Compliant      		166
      • 1:$5.9400
      • 10:$5.3700
      • 25:$5.1200
      • 100:$4.4500
      • 250:$4.2500
      SCT2H12NZGC11
      DISTI # TMOS1097      		ROHM SemiconductorSiC-N 1700V 1150mOhm 3.7A TO3PF
      RoHS: Compliant      		Stock DE - 0Stock HK - 0Stock US - 0
      • 450:$4.2200
      SCT2H12NZGC11ROHM Semiconductor 480
      • 1:¥359.7597
      • 100:¥150.3076
      • 450:¥75.3492
      SCT2H12NZGC11
      DISTI # 2531101      		ROHM SemiconductorMOSFET, N-CH, 1.7KV, 3.7A, TO-3PFM323
      • 100:£3.5700
      • 50:£3.8400
      • 10:£4.1100
      • 5:£4.7600
      • 1:£5.2600
      SCT2H12NZGC11
      DISTI # 2531101      		ROHM SemiconductorMOSFET, N-CH, 1.7KV, 3.7A, TO-3PFM
      RoHS: Compliant      		413
      • 120:$6.7100
      • 30:$7.7300
      • 10:$8.1000
      • 1:$8.9700
      SCT2H12NZGC11ROHM SemiconductorMOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC
      RoHS: Compliant      		Americas - 5040
        图片 型号 描述
        SCT2H12NYTB

        Mfr.#: SCT2H12NYTB

        OMO.#: OMO-SCT2H12NYTB

        		 MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide
        SCT2H12NZGC11

        Mfr.#: SCT2H12NZGC11

        OMO.#: OMO-SCT2H12NZGC11

        		 MOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC
        SCT2H12NY

        Mfr.#: SCT2H12NY

        OMO.#: OMO-SCT2H12NY-1190

        		 全新原装
        SCT2H12NYTB

        Mfr.#: SCT2H12NYTB

        OMO.#: OMO-SCT2H12NYTB-ROHM-SEMI

        		 1700V 1.2 OHM 4A SIC FET
        SCT2H12NZGC11

        Mfr.#: SCT2H12NZGC11

        OMO.#: OMO-SCT2H12NZGC11-ROHM-SEMI

        		 MOSFET N-CH 1700V 3.7A
        可用性
        库存:
        Available
        订购:
        4500
        输入数量:
        SCT2H12NZGC11的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格（美元）
        数量
        单价
        小计金额
        1
        US$6.33
        US$6.33
        10
        US$6.01
        US$60.14
        100
        US$5.70
        US$569.70
        500
        US$5.38
        US$2 690.25
        1000
        US$5.06
        US$5 064.00
        由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
        从...开始
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