FDA59N25

Mfr. #:: FDA59N25
制造商:: ON Semiconductor
描述:: MOSFET N-CH 250V 59A TO-3P
生命周期:: 制造商新产品。
数据表:: FDA59N25 数据表
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ECAD Model:

产品属性
属性值

制造商: FCS

产品分类: FET - 单

打包: 管子

单位重量: 0.225789 oz

安装方式: 通孔

包装盒: TO-3P-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 392 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 170 ns

上升时间: 480 ns

VGS-栅极-源极-电压: 30 V

Id 连续漏极电流: 59 A

Vds-漏-源-击穿电压: 250 V

Rds-On-Drain-Source-Resistance: 49 mOhms

晶体管极性: N通道

典型关断延迟时间: 90 ns

典型开启延迟时间: 70 ns

正向跨导最小值: 45 S

通道模式: 增强

Tags: FDA59, FDA5, FDA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDA59N25 描述

***Semiconductor: N-Channel Power MOSFET, UniFETTM, 250V, 59A, 49mΩ, TO-3P

***ure Electronics: Single N-Channel 250 V 0.049 Ohm 82 nC 392 W Silicon Flange Mount Mosfet TO-3PN

***ment14 APAC: MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:250V; On Resistance Rds(on):49mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:392W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:59A; Package / Case:TO-3P; Power Dissipation Pd:392W; Power Dissipation Pd:392W; Pulse Current Idm:236A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Market price

型号	制造商	描述	库存	价格
FDA59N25 DISTI # V99:2348_06359684	ON Semiconductor	250V N-CHANNEL MOSFET	156	2500:$1.1950 1000:$1.3210 500:$1.7170 250:$1.8820 100:$1.9650 10:$2.2050 1:$2.4990
FDA59N25 DISTI # FDA59N25-ND	ON Semiconductor	MOSFET N-CH 250V 59A TO-3P RoHS: Compliant Min Qty: 1 Container: Tube	714In Stock	1350:$1.8567 900:$1.9805 450:$2.4138 10:$3.2190 1:$3.5900
FDA59N25 DISTI # 29731014	ON Semiconductor	250V N-CHANNEL MOSFET	450	1000:$1.3344 500:$1.4304 450:$1.6224
FDA59N25 DISTI # 29512794	ON Semiconductor	250V N-CHANNEL MOSFET	156	250:$1.8820 100:$1.9650 10:$2.2050 5:$2.4990
FDA59N25 DISTI # FDA59N25	ON Semiconductor	Trans MOSFET N-CH 250V 59A 3-Pin TO-3PN Tube (Alt: FDA59N25) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€1.7900 10:€1.4900 25:€1.2900 50:€1.2900 100:€1.2900 500:€1.1900 1000:€1.1900
FDA59N25 DISTI # FDA59N25	ON Semiconductor	Trans MOSFET N-CH 250V 59A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA59N25) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$1.2900 10:$1.2900 25:$1.2900 50:$1.2900 100:$1.2900 500:$1.1900 1000:$1.1900
FDA59N25 DISTI # 04M9075	ON Semiconductor	MOSFET, N, TO-3P,Transistor Polarity:N Channel,Continuous Drain Current Id:59A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:392W,MSL:-RoHS Compliant: Yes	117	1:$3.1600 10:$2.7100 25:$2.6000 50:$2.4800 100:$2.3600 250:$2.2500 500:$2.0300
FDA59N25 DISTI # 512-FDA59N25	ON Semiconductor	MOSFET 250V N-Ch MOSFET RoHS: Compliant	695	1:$2.9800 10:$2.5400 100:$2.2000 250:$2.0900 500:$1.8700 1000:$1.5800 2500:$1.5000 5000:$1.4500
FDA59N25 DISTI # 1228352	ON Semiconductor	MOSFET, N, TO-3P RoHS: Compliant	118	1:£2.5700 10:£1.9400 100:£1.6800 250:£1.6000 500:£1.4300
FDA59N25 DISTI # C1S541901645850	ON Semiconductor	MOSFETs RoHS: Compliant	156	100:$1.9650 10:$2.2050 1:$2.4990
FDA59N25 DISTI # C1S541901387868	ON Semiconductor	Trans MOSFET N-CH 250V 59A 3-Pin(3+Tab) TO-3PN Tube RoHS: Compliant	690	450:$2.2300
FDA59N25 DISTI # 1228352	ON Semiconductor	MOSFET, N, TO-3P RoHS: Compliant	117	1:$4.7200 10:$4.0300 100:$3.4900 250:$3.3100 500:$2.9700 1000:$2.5000 2500:$2.3800 5000:$2.3000

图片	型号	描述
	Mfr.#: FDA59N30 OMO.#: OMO-FDA59N30	MOSFET 500V NCH MOSFET
	Mfr.#: FDA50N50 OMO.#: OMO-FDA50N50-ON-SEMICONDUCTOR	MOSFET N-CH 500V 48A TO-3P
	Mfr.#: FDA50N50 - 500V OMO.#: OMO-FDA50N50---500V-1190	全新原装
	Mfr.#: FDA50N50S OMO.#: OMO-FDA50N50S-1190	全新原装
	Mfr.#: FDA50N60 OMO.#: OMO-FDA50N60-1190	全新原装
	Mfr.#: FDA59N30 59N30 OMO.#: OMO-FDA59N30-59N30-1190	全新原装
	Mfr.#: FDA59N30,FDA50N50 OMO.#: OMO-FDA59N30-FDA50N50-1190	全新原装
	Mfr.#: FDA59N30,FDA50N50,FDA59N OMO.#: OMO-FDA59N30-FDA50N50-FDA59N-1190	全新原装
	Mfr.#: FDA59N30/ OMO.#: OMO-FDA59N30--1190	全新原装
	Mfr.#: FDA59N30LDTU OMO.#: OMO-FDA59N30LDTU-1190	全新原装

FDA59N25

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes