T2G6000528-Q3

T2G6000528-Q3
Mfr. #:
T2G6000528-Q3
制造商:
Qorvo
描述:
RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
生命周期:
制造商新产品。
数据表:
T2G6000528-Q3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
T2G6000528-Q3 更多信息
产品属性
属性值
制造商:
科沃
产品分类:
射频 JFET 晶体管
RoHS:
Y
晶体管类型:
HEMT
技术:
氮化镓碳化硅
获得:
15 dB
晶体管极性:
N通道
Vds - 漏源击穿电压:
-
Vgs - 栅源击穿电压:
-
Id - 连续漏极电流:
650 mA
输出功率:
10 W
最大漏栅电压:
-
最低工作温度:
-
最高工作温度:
-
Pd - 功耗:
12.5 W
安装方式:
贴片/贴片
打包:
托盘
应用:
军用雷达、专业和军用无线电通信
配置:
单身的
工作频率:
DC to 6 GHz
系列:
T2G
品牌:
科沃
正向跨导 - 最小值:
-
开发套件:
T2G6000528-Q3-EVB1, T2G6000528-Q3-EVB3, T2G6000528-Q3-EVB5
湿气敏感:
是的
产品类别:
射频 JFET 晶体管
出厂包装数量:
100
子类别:
晶体管
第 # 部分别名:
1099997
Tags
T2G6000528-Q, T2G6000, T2G6, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 6 GHz, 10W, 13.5 dB, 28 V, GaN
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型号 制造商 描述 库存 价格
T2G6000528-Q3
DISTI # 772-T2G6000528-Q3
QorvoRF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
RoHS: Compliant
291
  • 1:$80.4000
  • 25:$68.0500
  • 100:$57.6000
T2G6000528-Q3 28V
DISTI # 772-T2G6000528-Q328V
QorvoRF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
RoHS: Compliant
75
  • 1:$80.4000
  • 25:$68.0500
  • 100:$57.6000
T2G6000528-Q3EVB3
DISTI # 772-T2G6000528-Q3EV
QorvoRF Development Tools 3-3.3GHz Eval Board
RoHS: Compliant
2
  • 1:$875.0000
T2G6000528-Q3, EVAL BOARD
DISTI # 772-T2G6000528-Q3EB
QorvoRF Development Tools DC-6.0GHz 10 Watt 28V GaN Eval Brd
RoHS: Compliant
0
  • 1:$875.0000
图片 型号 描述
SE5023L-R

Mfr.#: SE5023L-R

OMO.#: OMO-SE5023L-R

RF Amplifier 5.15-5.85GHz Gain 32dB P1dB 34dBm
SN65LVDT41QPWREP

Mfr.#: SN65LVDT41QPWREP

OMO.#: OMO-SN65LVDT41QPWREP

LVDS Interface IC Mil Enhance MemStick Intercon Ext Chipset
2N7002LT1G

Mfr.#: 2N7002LT1G

OMO.#: OMO-2N7002LT1G

MOSFET 60V 115mA N-Channel
BOOST-CC2564MODA

Mfr.#: BOOST-CC2564MODA

OMO.#: OMO-BOOST-CC2564MODA

Bluetooth Development Tools (802.15.1) Bluetooth HCI module Booster
EWK212BJ106MD-T

Mfr.#: EWK212BJ106MD-T

OMO.#: OMO-EWK212BJ106MD-T-TAIYO-YUDEN

CAP CER 10UF 16V X5R 0508
SN65LVDT41QPWREP

Mfr.#: SN65LVDT41QPWREP

OMO.#: OMO-SN65LVDT41QPWREP-TEXAS-INSTRUMENTS

LVDS Interface IC Mil Enhance MemStick Intercon Ext Chipset
2N7002LT1G

Mfr.#: 2N7002LT1G

OMO.#: OMO-2N7002LT1G-ON-SEMICONDUCTOR

MOSFET N-CH 60V 0.115A SOT-23
CRGP0805F1K0

Mfr.#: CRGP0805F1K0

OMO.#: OMO-CRGP0805F1K0-TE-CONNECTIVITY-AMP

RES, 1K, 1%, 0.33W, 0805, THICK FILM
BOOST-CC2564MODA

Mfr.#: BOOST-CC2564MODA

OMO.#: OMO-BOOST-CC2564MODA-TEXAS-INSTRUMENTS

BLUETOOTH® CC2564 BOOSTERPACK™ BOARD
XAL4030-332MEC

Mfr.#: XAL4030-332MEC

OMO.#: OMO-XAL4030-332MEC-1190

Fixed Inductors 3.3uH 20% 6.6A 28.6mOhms AEC-Q200
可用性
库存:
236
订购:
2219
输入数量:
T2G6000528-Q3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$80.40
US$80.40
25
US$68.05
US$1 701.25
100
US$57.60
US$5 760.00
从...开始
Top