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IRF7465TRPBF

IRF7465TRPBF
Mfr. #:
IRF7465TRPBF
制造商:
Infineon / IR
描述:
MOSFET MOSFT 150V 1.9A 280mOhm 10nC
生命周期:
制造商新产品。
数据表:
IRF7465TRPBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7465TRPBF DatasheetIRF7465TRPBF Datasheet (P4-P6)IRF7465TRPBF Datasheet (P7-P8)
ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
SO-8
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
150 V
Id - 连续漏极电流：
1.9 A
Rds On - 漏源电阻：
280 mOhms
Vgs - 栅源电压：
30 V
Qg - 门电荷：
10 nC
Pd - 功耗：
2.5 W
配置：
单身的
打包：
卷轴
高度：
1.75 mm
长度：
4.9 mm
晶体管类型：
1 N-Channel
宽度：
3.9 mm
品牌：
英飞凌/红外
产品类别：
MOSFET
出厂包装数量：
4000
子类别：
MOSFET
第 # 部分别名：
SP001555398
单位重量：
0.019048 oz
Tags
IRF7465T, IRF7465, IRF746, IRF74, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 1.9 A, 150 V, 280 Mohm, 10 V, 5.5 V Rohs Compliant: Yes
***(Formerly Allied Electronics)
IRF7465PBF N-channel MOSFET Transistor,1.9 A, 150 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 150 V 0.28 Ohm 15 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 150V 1.9A 8-Pin SOIC Tube
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
*** Stop Electro
Small Signal Field-Effect Transistor, 1.9A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.9A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.9 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 280 / Gate-Source Voltage V = 30 / Fall Time ns = 9 / Rise Time ns = 1.2 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2.5
***eco
Transistor MOSFET P Channel 150 Volt 2.2 Amp 8 Pin SOIC
***ure Electronics
Single P-Channel 150 V 240 mOhm 49 nC HEXFET® Power Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -150V, -2.2A, 240 mOhm, 33 nC Qg, SO-8
***ical
Trans MOSFET P-CH 150V 2.2A 8-Pin SOIC Tube
***ineon SCT
-150V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ment14 APAC
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:2.2A; Source Voltage Vds:-150V; On Resistance Rds(on):0.24ohm; Rds(on)
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***nell
MOSFET, P; Transistor Polarity: P Channel; Continuous Drain Current Id: 2.2A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.24ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: -2.2A; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 150V; Voltage Vgs Max: -5V; Voltage Vgs Rds on Measurement: 10V
***i-Key
MOSFET 2N-CH 80V 8-SOIC
***ser
MOSFETs .3a, 80V, 0.222 Ohm Dual N-Channel
***i-Key Marketplace
SMALL SIGNAL N-CHANNEL MOSFET
***emi
P-Channel Shielded Gate PowerTrench® MOSFET -150V, -2.2A, 255mΩ
***Yang
Trans MOSFET P-CH 150V 2.2A 8-Pin SOIC T/R - Tape and Reel
***ment14 APAC
MOSFET, P-CH, -150V, -2.2A, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Source Voltage Vds:-150V; On Resistance
*** Stop Electro
Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***rchild Semiconductor
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates shielded gate technology. The process has been optimized for the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, P-CH, -150V, -2.2A, SOIC-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.2A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.191ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***et
Transistor MOSFET Array Dual N-CH 100V 2.1A 8-Pin SOIC T/R
*** Source Electronics
Trans MOSFET N-CH 100V 2.1A 8-Pin SOIC T/R / MOSFET 2N-CH 100V 1.6A 8-SOIC
***ure Electronics
ZXMN10A08 Series 100 V 0.25 Ohm N-Channel Enhancement Mode MOSFET -SOIC-8
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: N/N Variants: Enhancement mode Power dissipation: 1.8 W
型号 制造商 描述 库存 价格
IRF7465TRPBF
DISTI # V72:2272_13891088		Infineon Technologies AGTrans MOSFET N-CH 150V 1.9A 8-Pin SOIC T/R
RoHS: Compliant		3970
  • 3000:$0.2700
  • 1000:$0.3033
  • 500:$0.3649
  • 250:$0.3690
  • 100:$0.3731
  • 25:$0.5195
  • 10:$0.5263
  • 1:$0.6034
IRF7465TRPBF
DISTI # IRF7465PBFCT-ND		Infineon Technologies AGMOSFET N-CH 150V 1.9A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		15795In Stock
  • 1000:$0.4034
  • 500:$0.5042
  • 100:$0.6807
  • 10:$0.8820
  • 1:$1.0100
IRF7465TRPBF
DISTI # IRF7465PBFDKR-ND		Infineon Technologies AGMOSFET N-CH 150V 1.9A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		15795In Stock
  • 1000:$0.4034
  • 500:$0.5042
  • 100:$0.6807
  • 10:$0.8820
  • 1:$1.0100
IRF7465TRPBF
DISTI # IRF7465PBFTR-ND		Infineon Technologies AGMOSFET N-CH 150V 1.9A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		12000In Stock
  • 4000:$0.3549
IRF7465TRPBF
DISTI # 31066203		Infineon Technologies AGTrans MOSFET N-CH 150V 1.9A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 4000:$0.2352
IRF7465TRPBF
DISTI # 31016505		Infineon Technologies AGTrans MOSFET N-CH 150V 1.9A 8-Pin SOIC T/R
RoHS: Compliant		3970
  • 3000:$0.2700
  • 1000:$0.3033
  • 500:$0.3649
  • 250:$0.3690
  • 100:$0.3731
  • 29:$0.5195
IRF7465TRPBF
DISTI # IRF7465TRPBF		Infineon Technologies AGTrans MOSFET N-CH 150V 1.9A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7465TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.2559
  • 8000:$0.2469
  • 16000:$0.2379
  • 24000:$0.2299
  • 40000:$0.2259
IRF7465TRPBF
DISTI # IRF7465TRPBF		Infineon Technologies AGTrans MOSFET N-CH 150V 1.9A 8-Pin SOIC T/R (Alt: IRF7465TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
  • 4000:$0.2480
  • 8000:$0.2411
  • 12000:$0.2346
  • 20000:$0.2284
  • 40000:$0.2255
  • 100000:$0.2226
  • 200000:$0.2198
IRF7465TRPBF
DISTI # 32AC7472		Infineon Technologies AGMOSFET, N-CH, 150V, 1.9A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:1.9A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.28ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,Power RoHS Compliant: Yes1290
  • 1:$0.8300
  • 10:$0.6900
  • 25:$0.6080
  • 50:$0.5270
  • 100:$0.4450
  • 250:$0.4150
  • 500:$0.3860
  • 1000:$0.3560
IRF7465TRPBF
DISTI # 70018914		Infineon Technologies AGIRF7465TRPBF N-channel MOSFET Transistor,1.9 A,150 V,8-Pin SOIC
RoHS: Compliant		0
  • 4000:$0.8800
IRF7465TRPBF
DISTI # 942-IRF7465TRPBF		Infineon Technologies AGMOSFET MOSFT 150V 1.9A 280mOhm 10nC
RoHS: Compliant		5637
  • 1:$0.8300
  • 10:$0.6900
  • 100:$0.4450
  • 1000:$0.3560
IRF7465TRPBFInfineon Technologies AGSingle N-Channel 150 V 0.28 Ohm 15 nC HEXFET Power Mosfet - SOIC-8
RoHS: Compliant		4000Reel
  • 4000:$0.2750
IRF7465TRPBFInternational Rectifier 800
  • 268:$0.6000
  • 68:$0.7500
  • 1:$1.5000
IRF7465TRPBF
DISTI # 8273861P		Infineon Technologies AGHEXFET N-CH MOSFET 1.9A 150V SMPS SOIC8, RL1120
  • 200:£0.3850
IRF7465TRPBF
DISTI # 2777385		Infineon Technologies AGMOSFET, N-CH, 150V, 1.9A, SOIC
RoHS: Compliant		2050
  • 5:£0.5460
  • 25:£0.5430
  • 100:£0.3430
  • 250:£0.3060
  • 500:£0.2700
IRF7465TRPBF
DISTI # 2777385		Infineon Technologies AGMOSFET, N-CH, 150V, 1.9A, SOIC
RoHS: Compliant		1290
  • 5:$1.0400
  • 25:$0.9060
  • 100:$0.7390
  • 250:$0.6240
  • 500:$0.5400
  • 1000:$0.5110
  • 5000:$0.4840
IRF7465TRPBF.
DISTI # 1824970		Infineon Technologies AGMOSFET Transistor
RoHS: Compliant		0
  • 1:$1.3800
  • 10:$1.1600
  • 100:$0.7440
  • 1000:$0.5960
  • 2000:$0.5030
  • 4000:$0.4840
  • 8000:$0.4820
  • 24000:$0.4530
IRF7465TRPBF
DISTI # C1S322000485033		Infineon Technologies AGTrans MOSFET N-CH 150V 1.9A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 4000:$0.3430
IRF7465TRPBF
DISTI # C1S322000485024		Infineon Technologies AGTrans MOSFET N-CH 150V 1.9A 8-Pin SOIC T/R
RoHS: Compliant		3970
  • 250:$0.3690
  • 100:$0.3731
  • 25:$0.5195
  • 10:$0.5263
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可用性
库存:
Available
订购:
1987
输入数量:
IRF7465TRPBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$0.83
US$0.83
10
US$0.69
US$6.90
100
US$0.44
US$44.50
1000
US$0.36
US$356.00
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