BFP842ESDH6327XTSA1

Mfr. #:: BFP842ESDH6327XTSA1
制造商:: Infineon Technologies
描述:: RF Bipolar Transistors RF BIP TRANSISTORS
生命周期:: 制造商新产品。
数据表:: BFP842ESDH6327XTSA1 数据表
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更多信息:: BFP842ESDH6327XTSA1 更多信息

产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - 双极 (BJT) - RF

系列: BFP842

打包: Digi-ReelR 替代包装

部分别名: 842ESD BFP BFP842ESDH6327XT H6327 SP000943012

安装方式: 贴片/贴片

包装盒: SC-82A, SOT-343

技术: 硅锗

安装型: 表面贴装

供应商-设备-包: SOT-343

最大功率: 120mW

晶体管型: NPN

电流收集器 Ic-Max: 40mA

电压收集器发射极击穿最大值: 3.7V

DC-电流-增益-hFE-Min-Ic-Vce: 150 @ 15mA, 2.5V

频率转换: 60GHz

噪声系数-dB-Typ-f: 0.65dB @ 3.5GHz

获得: 26dB

钯功耗: 120 mW

最高工作温度: + 150 C

最低工作温度: - 55 C

工作频率: 60 GHz

集电极-发射极-电压-VCEO-Max: 3.25 V

发射极-基极-电压-VEBO: 4.1 V

连续集电极电流: 40 mA

Tags: BFP842ESDH, BFP842, BFP84, BFP8, BFP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BFP842ESDH6327XTSA1 描述

***ure Electronics: BFP842ESD Series NPN 120 mW 3.7 V 40 mA Low Noise Bipolar RF Transistor -SOT-343

***Components: In a Pack of 20, Infineon BFP842ESDH6327XTSA1 NPN Transistor, 40 mA, 2.9 V, 3.25 V, 4-Pin SOT-343

***et Europe: Trans GP BJT NPN 3.25V 0.04A 4-Pin SOT-343 T/R

***ark: RF TRANSISTOR, NPN, 3.25V, 57GHZ, SOT343

***ronik: NPN RF-Trans 3,25V 40mA SOT343

***i-Key: RF TRANS NPN 3.7V 60GHZ SOT343

***ical: BFP 842ESD H6327

***ment14 APAC: Prices include import duty and tax. RF TRANSISTOR, NPN, 3.25V, 57GHZ, SOT343; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:3.25V; Transition Frequency ft:57GHz; Power Dissipation Pd:120mW; DC Collector Current:40mA; DC Current Gain hFE:150hFE; RF Transistor Case:SOT-343; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: TRANSISTOR RF NPN 3.25V 57GHZ SOT343; Polarità Transistor:NPN; Tensione Collettore-Emettitore V(br)ceo:3.25V; Frequenza di Transizione ft:57GHz; Dissipazione di Potenza Pd:120mW; Corrente di Collettore CC:40mA; Guadagno di Corrente CC hFE:150hFE; Case Transistor RF:SOT-343; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use industry standard package with visible leads. | Summary of Features: Robust very low noise amplifier based on Infineons reliable, high volume; SiGe:C technology; Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power, 1 kV HBM ESD hardness; High linearity OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA; High transition frequency fT = 60 GHz enables very low noise figure at high frequencies: NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA; Transducer gain |S21|2 = 16 dB @ 3.5 GHz, 2.5 V, 15 mA; Ideal for low voltage applications e.g. VCC = 1.8 V and 2.85 V (3.3 V, 3.6 V requires corresponding collector resistor); Low power consumption, ideal for mobile applications; Easy to use Pb free (RoHS compliant) and halogen free industry standard package with visible leads | Target Applications: Mobile and fixed connectivity applications: WLAN 802.11b/g/n, WiMAX 2.5/3.5 GHz, Bluetooth; Satellite communication systems: GNSS Navigation systems (GPS, GLONASS, COMPASS/Beidu/Galileo), Satellite radio (SDARs, DAB and C-band LNB) and C-band LNB (1st and 2nd stage LNA); Multimedia applications such as mobile/portable TV, Mobile TV, FM Radio; 3G/4G UMTS/LTE mobile phone applications; ISM applications like RKE, AMR and Zigbee

BFP842ESDH6327XTSA1 更多信息

Infineon Drone/Multicopter Solutions: Infineon Drone/Multicopter Solutions offer a portfolio of high-quality products with a wide spectrum of components. These cost-effective system solutions feature everything from power electronics to controllers and sensors. Design a highly efficient multicopter with an excellent user experience capable of light weight, longer flying times, better safety and reliability.Learn More

BFPx4 RF Transistors: Infineon's BFPx4 RF Transistors provide the designer the best possible performance, superior flexibility and price/performance ratio. These are widely used for new emerging wireless applications, where the system specification is not yet firmly established. The BFxx Low Noise Amplifiers (LNAs) include devices suitable for use from AM over VHF/UHF up to 14GHz. These are the latest LNA innovations based on Infineon’s reliable high volume 80GHz fT silicon germanium carbon (SiGe:C) heterojunction bipolar technology. They combine uncompromised RF performance with outstanding robustness against high RF input power overdrive and Electrostatic Discharge (ESD). The BGS12SL6 RF MOS Switch is a general purpose 0.1 - 6.0GHz SPDT switch suitable for band/mode switching in cellular systems and WLAN applications. The ESD112B1 TVS ESD/Transient Protection Diode is a bi-directional, ultra-low capacitance ESD/Transient protection diode designed for the protection of RF signal lines.Learn More

RF Solutions: Infineon RF Solutions provide RF products for numerous applications with high-performance, cost-effective devices. RF solutions include transistors, low-noise amplifiers, GPS/GLONASS/COMPASS LNA, switches, modules and tuners.

Market price

型号	制造商	描述	库存	价格
BFP842ESDH6327XTSA1 DISTI # V72:2272_06391074	Infineon Technologies AG	Trans RF BJT 3.25V 0.04A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	2284	1000:$0.1714 500:$0.1719 250:$0.1911 100:$0.2124 25:$0.3081 10:$0.3424 1:$0.3901
BFP842ESDH6327XTSA1 DISTI # V36:1790_06391074	Infineon Technologies AG	Trans RF BJT 3.25V 0.04A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	0
BFP842ESDH6327XTSA1 DISTI # BFP842ESDH6327XTSA1CT-ND	Infineon Technologies AG	RF TRANS NPN 3.7V 60GHZ SOT343 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2933In Stock	1000:$0.1854 500:$0.2400 100:$0.3054 10:$0.4090 1:$0.4800
BFP842ESDH6327XTSA1 DISTI # BFP842ESDH6327XTSA1DKR-ND	Infineon Technologies AG	RF TRANS NPN 3.7V 60GHZ SOT343 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2933In Stock	1000:$0.1854 500:$0.2400 100:$0.3054 10:$0.4090 1:$0.4800
BFP842ESDH6327XTSA1 DISTI # BFP842ESDH6327XTSA1TR-ND	Infineon Technologies AG	RF TRANS NPN 3.7V 60GHZ SOT343 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	75000:$0.1324 30000:$0.1356 15000:$0.1430 6000:$0.1536 3000:$0.1641
BFP842ESDH6327XTSA1 DISTI # 26195746	Infineon Technologies AG	Trans RF BJT 3.25V 0.04A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	2284	1000:$0.1843 500:$0.1848 250:$0.2054 100:$0.2283 48:$0.3011
BFP842ESDH6327XTSA1 DISTI # BFP842ESDH6327XTSA1	Infineon Technologies AG	Trans GP BJT NPN 3.25V 0.04A 4-Pin SOT-343 T/R - Tape and Reel (Alt: BFP842ESDH6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1339 18000:$0.1369 12000:$0.1409 6000:$0.1469 3000:$0.1519
BFP842ESDH6327XTSA1 DISTI # BFP842ESDH6327XTSA1	Infineon Technologies AG	Trans GP BJT NPN 3.25V 0.04A 4-Pin SOT-343 T/R - Bulk (Alt: BFP842ESDH6327XTSA1) RoHS: Compliant Min Qty: 2273 Container: Bulk	Americas - 0	22730:$0.1389 11365:$0.1419 6819:$0.1469 4546:$0.1519 2273:$0.1579
BFP842ESDH6327XTSA1 DISTI # SP000943012	Infineon Technologies AG	Trans GP BJT NPN 3.25V 0.04A 4-Pin SOT-343 T/R (Alt: SP000943012) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1399 18000:€0.1509 12000:€0.1779 6000:€0.2179 3000:€0.2799
BFP842ESDH6327XTSA1 DISTI # 50Y1762	Infineon Technologies AG	Bipolar - RF Transistor, NPN, 3.25 V, 57 GHz, 120 mW, 40 mA, 150 RoHS Compliant: Yes	0	1000:$0.1990 500:$0.2170 250:$0.2330 100:$0.2500 50:$0.2980 25:$0.3440 10:$0.3920 1:$0.4750
BFP 842ESD H6327 DISTI # 726-BFP842ESDH6327	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTORS RoHS: Compliant	2512	1:$0.4600 10:$0.3830 100:$0.2340 1000:$0.1810 3000:$0.1540
BFP842ESDH6327XTSA1 DISTI # 726-BFP842ESDH6327XT	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTORS RoHS: Compliant	79	1:$0.4600 10:$0.3830 100:$0.2340 1000:$0.1810 3000:$0.1540
BFP842ESDH6327XTSA1	Infineon Technologies AG	Small Signal Bipolar Transistor RoHS: Compliant	33000	500:$0.1500 1000:$0.1500 100:$0.1600 25:$0.1700 1:$0.1800
BFP842ESDH6327XTSA1 DISTI # 1702256	Infineon Technologies AG	RF TRANSISTOR 3GHZ LOWNOISE SIGE SOT-343, RL	5680	9000:£0.1350 6000:£0.1440 3000:£0.1540
BFP842ESDH6327XTSA1 DISTI # 2480677	Infineon Technologies AG	RF TRANSISTOR, NPN, 3.25V, 57GHZ, SOT343 RoHS: Compliant	1230	100:$0.3610 10:$0.5890 1:$0.7070
BFP842ESDH6327XTSA1 DISTI # 2480677RL	Infineon Technologies AG	RF TRANSISTOR, NPN, 3.25V, 57GHZ, SOT343 RoHS: Compliant	0	100:$0.3610 10:$0.5890 1:$0.7070
BFP842ESDH6327XTSA1 DISTI # 2480677	Infineon Technologies AG	RF TRANSISTOR, NPN, 3.25V, 57GHZ, SOT343	1450	500:£0.1440 250:£0.1570 100:£0.1690 25:£0.2980 5:£0.3310

图片	型号	描述
	Mfr.#: BFP842ESDH6327XTSA1 OMO.#: OMO-BFP842ESDH6327XTSA1	RF Bipolar Transistors RF BIP TRANSISTORS
	Mfr.#: BFP842ESD OMO.#: OMO-BFP842ESD-INFINEON-TECHNOLOGIES	全新原装
	Mfr.#: BFP842ESD BOARD OMO.#: OMO-BFP842ESD-BOARD-INFINEON-TECHNOLOGIES	全新原装
	Mfr.#: BFP842ESD H6327 OMO.#: OMO-BFP842ESD-H6327-1190	全新原装
	Mfr.#: BFP842ESDH6327 OMO.#: OMO-BFP842ESDH6327-INFINEON-TECHNOLOGIES	Infineon Ultra Low-Noise SiGe:C Transistor BFP842ESD - SOT343-4-2
	Mfr.#: BFP842ESDH6327XTSA1 OMO.#: OMO-BFP842ESDH6327XTSA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors RF BIP TRANSISTORS

BFP842ESDH6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes