IPSA70R600P7SAKMA1

IPSA70R600P7SAKMA1
Mfr. #:
IPSA70R600P7SAKMA1
制造商:
Infineon Technologies
描述:
MOSFET CONSUMER
生命周期:
制造商新产品。
数据表:
IPSA70R600P7SAKMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
通孔
包装/案例:
PG-TO-251-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
700 V
Id - 连续漏极电流:
8.5 A
Rds On - 漏源电阻:
490 mOhms
Vgs th - 栅源阈值电压:
2.5 V
Vgs - 栅源电压:
16 V
Qg - 门电荷:
10.5 nC
最低工作温度:
- 40 C
最高工作温度:
+ 150 C
Pd - 功耗:
43.1 W
配置:
单身的
频道模式:
增强
打包:
管子
晶体管类型:
1 N-Channel
品牌:
英飞凌科技
秋季时间:
23 ns
产品类别:
MOSFET
上升时间:
5.5 ns
出厂包装数量:
1500
子类别:
MOSFET
典型关断延迟时间:
63 ns
典型的开启延迟时间:
14 ns
第 # 部分别名:
IPSA70R600P7S SP001664806
Tags
IPSA70R6, IPSA7, IPSA, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 700V 8.5A 3-Pin(3+Tab) TO-251 Tube
***ark
Mosfet, N-Ch, 700V, 8.5A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:700V; On Resistance Rds(On):0.49Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off; Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior; Allowing high speed switching; Integrated protection Zener diode; Optimized V (GS)th of 3V with very narrow tolerance of 0.5V; Finely graduated portfolio | Benefits: Cost competitive technology; Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology; Further efficiency gain at higher switching speed; Supporting less magnetic size with lower BOM costs; High ESD ruggedness up to HBM Class 2 level; Easy to drive and design-in; Enabler for smaller form factors and high power density designs; Excellent choice in selecting the best fitting product | Target Applications: Charger; Adapter; TV; Lighting; Audio; Aux power
型号 制造商 描述 库存 价格
IPSA70R600P7SAKMA1
DISTI # IPSA70R600P7SAKMA1-ND
Infineon Technologies AGMOSFET COOLMOS 700V TO251-3
RoHS: Compliant
Min Qty: 1
Container: Tube
1835In Stock
  • 6000:$0.3050
  • 3000:$0.3276
  • 1500:$0.3615
  • 100:$0.5717
  • 25:$0.7004
  • 10:$0.7460
  • 1:$0.8500
IPSA70R600P7SAKMA1
DISTI # IPSA70R600P7SAKMA1
Infineon Technologies AGCONSUMER - Rail/Tube (Alt: IPSA70R600P7SAKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube
Americas - 3000
  • 15000:$0.2649
  • 7500:$0.2719
  • 4500:$0.2789
  • 3000:$0.2859
  • 1500:$0.2939
IPSA70R600P7SAKMA1
DISTI # IPSA70R600P7SAKMA1
Infineon Technologies AGCONSUMER - Bulk (Alt: IPSA70R600P7SAKMA1)
Min Qty: 1250
Container: Bulk
Americas - 0
    IPSA70R600P7SAKMA1
    DISTI # 49AC8010
    Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:700V,On Resistance Rds(on):0.49ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes480
    • 1000:$0.3480
    • 500:$0.3920
    • 100:$0.4350
    • 10:$0.6750
    • 1:$0.8080
    IPSA70R600P7SAKMA1
    DISTI # 726-IPSA70R600P7SAKM
    Infineon Technologies AGMOSFET CONSUMER
    RoHS: Compliant
    1987
    • 1:$0.8000
    • 10:$0.6680
    • 100:$0.4310
    • 1000:$0.3450
    IPSA70R600P7SAKMA1Infineon Technologies AG 
    RoHS: Not Compliant
    1500
    • 1000:$0.2600
    • 500:$0.2800
    • 100:$0.2900
    • 25:$0.3000
    • 1:$0.3200
    IPSA70R600P7SAKMA1
    DISTI # 2843153
    Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-251
    RoHS: Compliant
    480
    • 6000:$0.4600
    • 3000:$0.4940
    • 1500:$0.5450
    • 100:$0.8620
    • 25:$1.0600
    • 5:$1.1300
    IPSA70R600P7SAKMA1
    DISTI # 2843153
    Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-251480
    • 500:£0.2850
    • 250:£0.3070
    • 100:£0.3290
    • 10:£0.5590
    • 1:£0.6990
    图片 型号 描述
    MJD31CT4G

    Mfr.#: MJD31CT4G

    OMO.#: OMO-MJD31CT4G

    Bipolar Transistors - BJT 3A 100V 15W NPN
    STGD4M65DF2

    Mfr.#: STGD4M65DF2

    OMO.#: OMO-STGD4M65DF2

    IGBT Transistors PTD HIGH VOLTAGE
    STGF4M65DF2

    Mfr.#: STGF4M65DF2

    OMO.#: OMO-STGF4M65DF2

    IGBT Transistors PTD HIGH VOLTAGE
    STGD4M65DF2

    Mfr.#: STGD4M65DF2

    OMO.#: OMO-STGD4M65DF2-STMICROELECTRONICS

    TRENCH GATE FIELD-STOP IGBT, M S
    STGF4M65DF2

    Mfr.#: STGF4M65DF2

    OMO.#: OMO-STGF4M65DF2-STMICROELECTRONICS

    TRENCH GATE FIELD-STOP IGBT, M S
    MJD31CT4G

    Mfr.#: MJD31CT4G

    OMO.#: OMO-MJD31CT4G-ON-SEMICONDUCTOR

    Bipolar Transistors - BJT 3A 100V 15W NPN
    可用性
    库存:
    Available
    订购:
    1984
    输入数量:
    IPSA70R600P7SAKMA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$0.80
    US$0.80
    10
    US$0.67
    US$6.68
    100
    US$0.43
    US$43.10
    1000
    US$0.34
    US$345.00
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