BGA5L1BN6E6327XTSA1

BGA5L1BN6E6327XTSA1
Mfr. #:
BGA5L1BN6E6327XTSA1
制造商:
Infineon Technologies
描述:
RF Amplifier RF SILICON MMIC
生命周期:
制造商新产品。
数据表:
BGA5L1BN6E6327XTSA1 数据表
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HTML Datasheet:
BGA5L1BN6E6327XTSA1 DatasheetBGA5L1BN6E6327XTSA1 Datasheet (P4-P6)BGA5L1BN6E6327XTSA1 Datasheet (P7-P9)BGA5L1BN6E6327XTSA1 Datasheet (P10-P12)
ECAD Model:
更多信息:
BGA5L1BN6E6327XTSA1 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
射频放大器
RoHS:
Y
安装方式:
贴片/贴片
包装/案例:
TSNP-6
类型:
低噪声放大器
技术:
硅锗
工作频率:
600 MHz to 1000 MHz
P1dB - 压缩点:
- 20 dBm
获得:
18.7 dB
工作电源电压:
1.5 V to 3.6 V
NF - 噪声系数:
0.75 dB
测试频率:
840 MHz
OIP3 - 三阶拦截:
- 7 dBm
工作电源电流:
8.2 mA
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
打包:
卷轴
品牌:
英飞凌科技
通道数:
1 Channel
输入回波损耗:
11 dB
隔离分贝:
29 dB
Pd - 功耗:
60 mW
产品类别:
射频放大器
出厂包装数量:
12000
子类别:
无线和射频集成电路
第 # 部分别名:
5L1BN6 BGA E6327 SP001685180
Tags
BGA5, BGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
RF Low Noise Amp Single 1000MHz 18.7dB 6-Pin TSNP T/R
***i-Key
IC RF AMP LTE
***ark
Low Noise Amp, 18.5Db, 1Ghz, 3.6V, Tsnp; Frequency Min:600Mhz; Frequency Max:1Ghz; Gain:18.5Db; Noise Figure Typ:0.7Db; Rf Ic Case Style:tsnp; No. Of Pins:6Pins; Supply Voltage Min:1.5V; Supply Voltage Max:3.6V; Operating Temperaturerohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. LOW NOISE AMP, 18.5DB, 1GHZ, 3.6V, TSNP; Frequency Min:600MHz; Frequency Max:1GHz; Gain:18.5dB; Noise Figure Typ:0.7dB; RF IC Case Style:TSNP; No. of Pins:6Pins; Supply Voltage Min:1.5V; Supply Voltage Max:3.6V; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:-; Automotive Qualification Standard:-; RoHS Phthalates Compliant:Yes; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
AMP. BASSO RUMORE 18.5DB 1GHZ, 3.6V TSNP; Frequenza Min:600MHz; Frequenza Max:1GHz; Guadagno:18.5dB; Figura di Rumore Tipica:0.7dB; Modello Case CI RF:TSNP; No. di Pin:6Pin; Tensione di Alimentazione Min:1.5V; Tensione di Alimentazione Max:3.6V; Temperatura di Esercizio Min:-40°C; Temperatura di Esercizio Max:85°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The BGA5L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 600 MHz to 1000 MHz. The LNA provides 18.5 dB gain and 0.7 dB noise figure at a current consumption of 8.2mA. In bypass mode the LNA provides an insertion loss of 2.7 dB. | Summary of Features: Operating frequencies: 600 - 1000 MHz; Insertion power gain: 18.5 dB; Insertion loss in bypass mode: 2.7 dB; Low noise figure: 0.7dB; Low current consumption: 8.2mA; Multi-state control: bypass- and high gain-mode; Ultra small TSNP-6-2 and TSNP-6-10 leadless package; RF output internally matched to 50 Ohm; Low external component count | Target Applications: LTE
BGA5x1BN6 Low-noise Amplifiers
Infineon Technologies BGA5x1BN6 Amplifier product family includes +18dBm high-gain, low-noise amplifiers that cover the low (600-1000MHz) mid (1805-2200MHz), and high-band (2300-2690MHz) frequency ranges. Based on Infineon Technologies‘ B9HF Silicon Germanium technology, the BGA5x1BN6 Amplifiers operate from a 1.5V to 3.6V supply voltage and offer single-line two-state control.  The amplifiers provide excellent low-noise performance and competitive insertion-loss levels. Designers can easily enable BGA5x1BN6's off-state mode by powering down the VCC. Available in an ultra-small leadless package measuring only 0.7 x 1.1mm2, the BGA5x1BN6 Amplifiers are ideal for smartphones running on the LTE or GSM network.
型号 制造商 描述 库存 价格
BGA5L1BN6E6327XTSA1
DISTI # V72:2272_19084594
Infineon Technologies AGBGA 5L1BN6 E632711900
  • 6000:$0.2237
  • 3000:$0.2262
  • 1000:$0.2477
  • 500:$0.2917
  • 250:$0.3155
  • 100:$0.3189
  • 25:$0.4770
  • 10:$0.5525
  • 1:$0.6737
BGA5L1BN6E6327XTSA1
DISTI # BGA5L1BN6E6327XTSA1TR-ND
Infineon Technologies AGIC RF AMP LTE
RoHS: Compliant
Min Qty: 12000
Container: Tape & Reel (TR)
On Order
  • 24000:$0.2046
  • 12000:$0.2104
BGA5L1BN6E6327XTSA1
DISTI # BGA5L1BN6E6327XTSA1CT-ND
Infineon Technologies AGIC RF AMP LTE
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 5000:$0.2304
  • 1000:$0.2599
  • 500:$0.3292
  • 250:$0.3725
  • 100:$0.4245
  • 25:$0.4852
  • 10:$0.5370
  • 1:$0.6100
BGA5L1BN6E6327XTSA1
DISTI # BGA5L1BN6E6327XTSA1DKR-ND
Infineon Technologies AGIC RF AMP LTE
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 5000:$0.2304
  • 1000:$0.2599
  • 500:$0.3292
  • 250:$0.3725
  • 100:$0.4245
  • 25:$0.4852
  • 10:$0.5370
  • 1:$0.6100
BGA5L1BN6E6327XTSA1
DISTI # 31978841
Infineon Technologies AGBGA 5L1BN6 E632712000
  • 12000:$0.2302
BGA5L1BN6E6327XTSA1
DISTI # 33710953
Infineon Technologies AGBGA 5L1BN6 E632711900
  • 31:$0.6737
BGA5L1BN6E6327XTSA1
DISTI # SP001685180
Infineon Technologies AGRF Low Noise Amp Single 1000MHz 18.7dB 6-Pin TSNP T/R (Alt: SP001685180)
RoHS: Compliant
Min Qty: 12000
Container: Tape and Reel
Europe - 12000
  • 120000:€0.2409
  • 72000:€0.2549
  • 48000:€0.2969
  • 24000:€0.3479
  • 12000:€0.4049
BGA5L1BN6E6327XTSA1
DISTI # BGA5L1BN6E6327XTSA1
Infineon Technologies AGRF SILICON MMIC - Tape and Reel (Alt: BGA5L1BN6E6327XTSA1)
RoHS: Compliant
Min Qty: 12000
Container: Reel
Americas - 0
  • 120000:$0.2089
  • 72000:$0.2129
  • 48000:$0.2199
  • 24000:$0.2289
  • 12000:$0.2369
BGA5L1BN6E6327XTSA1
DISTI # 60AC3536
Infineon Technologies AGLOW NOISE AMP, 18.5DB, 1GHZ, 3.6V, TSNP,Frequency Min:600MHz,Frequency Max:1GHz,Gain:18.5dB,Noise Figure Typ:0.7dB,RF IC Case Style:TSNP,No. of Pins:6Pins,Supply Voltage Min:1.5V,Supply Voltage Max:3.6V,Operating TemperatureRoHS Compliant: Yes11852
  • 1000:$0.2670
  • 500:$0.2890
  • 250:$0.3110
  • 100:$0.3330
  • 50:$0.3950
  • 25:$0.4560
  • 10:$0.5170
  • 1:$0.6260
BGA5L1BN6E6327XTSA1
DISTI # 726-BGA5L1BN6E6327XT
Infineon Technologies AGRF Amplifier RF SILICON MMIC
RoHS: Compliant
11325
  • 1:$0.6200
  • 10:$0.5120
  • 100:$0.3300
  • 1000:$0.2640
  • 2500:$0.2230
  • 12000:$0.2150
  • 24000:$0.2070
BGA5L1BN6E6327XTSA1
DISTI # XSKDRABV0030230
Infineon Technologies AGUDFN-8
RoHS: Compliant
36000 in Stock0 on Order
  • 36000:$0.3227
  • 12000:$0.3457
BGA5L1BN6E6327XTSA1
DISTI # 2888779
Infineon Technologies AGLOW NOISE AMP, 18.5DB, 1GHZ, 3.6V, TSNP11854
  • 500:£0.2080
  • 250:£0.2240
  • 100:£0.2410
  • 50:£0.3560
  • 1:£0.4080
BGA5L1BN6E6327XTSA1
DISTI # 2888779
Infineon Technologies AGLOW NOISE AMP, 18.5DB, 1GHZ, 3.6V, TSNP
RoHS: Compliant
11852
  • 1000:$0.3920
  • 500:$0.4970
  • 250:$0.5620
  • 100:$0.6400
  • 25:$0.7320
  • 10:$0.8090
  • 1:$0.9200
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Mfr.#: DF62W-2022SCF

OMO.#: OMO-DF62W-2022SCF

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OMO.#: OMO-QPL9065TR13-1152

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Mfr.#: DF62W-2022SCF

OMO.#: OMO-DF62W-2022SCF-HIROSE

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Mfr.#: RFSW1012TR7

OMO.#: OMO-RFSW1012TR7-285

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可用性
库存:
11
订购:
1994
输入数量:
BGA5L1BN6E6327XTSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.62
US$0.62
10
US$0.51
US$5.12
100
US$0.33
US$33.00
1000
US$0.26
US$264.00
2500
US$0.22
US$557.50
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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