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IRLU3717PBF

IRLU3717PBF
Mfr. #:
IRLU3717PBF
制造商:
Infineon / IR
描述:
MOSFET MOSFT 20V 120A 21nC 4.2mOhm Qg log lvl
生命周期:
制造商新产品。
数据表:
IRLU3717PBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLU3717PBF DatasheetIRLU3717PBF Datasheet (P4-P6)IRLU3717PBF Datasheet (P7-P9)IRLU3717PBF Datasheet (P10-P12)
ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-251-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
20 V
Id - 连续漏极电流：
120 A
Rds On - 漏源电阻：
5.7 mOhms
Vgs - 栅源电压：
20 V
Qg - 门电荷：
21 nC
Pd - 功耗：
89 W
配置：
单身的
打包：
管子
高度：
6.22 mm
长度：
6.73 mm
晶体管类型：
1 N-Channel
宽度：
2.38 mm
品牌：
英飞凌/红外
产品类别：
MOSFET
出厂包装数量：
75
子类别：
MOSFET
第 # 部分别名：
SP001573078
单位重量：
0.139332 oz
Tags
IRLU371, IRLU37, IRLU3, IRLU, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, N Ch., 20V, 120A, 4.2 MOHM, 21 NC QG, I-PAK, Pb-Free
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:120A; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 20V, 120A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:89W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:120A; Junction to Case Thermal Resistance A:1.69°C/W; On State resistance @ Vgs = 10V:4.2mohm; Package / Case:IPAK; Power Dissipation Pd:89W; Power Dissipation Pd:89W; Pulse Current Idm:460A; Termination Type:Through Hole; Voltage Vds Typ:20V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.45V
***emi
Power MOSFET 25 V, 124 A, Single N-Channel
***r Electronics
Power Field-Effect Transistor, 15.7A I(D), 25V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 25V 15.7A/128A IPAK
***emi
Power MOSFET 25 V, 124 A, Single N-Channel
***r Electronics
Power Field-Effect Transistor, 15.7A I(D), 25V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 25V 15.7A/128A IPAK
***i-Key
MOSFET N-CH 20V 35A I-PAK
***ser
MOSFETs 20V,35A,5.5 OHM, NCH, IPAK, PO
***ark
MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:35A; Resistance, Rds On:0.0055ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:I-PAK; Termination ;RoHS Compliant: Yes
***emi
Power MOSFET 24V 85A 5.2 mOhm Single N-Channel DPAK
***et
Trans MOSFET N-CH 24V 17A 3-Pin(3+Tab) IPAK Rail
***ser
MOSFETs- Power and Small Signal 24V 85A N-Channel
***r Electronics
Power Field-Effect Transistor, 85A I(D), 24V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:85A; Drain Source Voltage, Vds:24V; On Resistance, Rds(on):5.2mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.5V; Power Dissipation, Pd:78.1W ;RoHS Compliant: Yes
***ter Electronics
25V,35A,4.0 OHM, NCH, IPAK, POWER TRENCH MOSFET
***i-Key
MOSFET N-CH 25V 35A I-PAK
***r Electronics
Power Field-Effect Transistor, 35A I(D), 25V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ser
MOSFETs LOW_VOLTAGE
***et
MOSFET LOW VOLTAGE
***el Nordic
Contact for details
***(Formerly Allied Electronics)
MOSFET, 20V, 49A, 11 MOHM, 7.2 NC QG, LOGIC LEVEL, I-PAK
***ernational Rectifier
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
*** Electronic Components
IGBT Transistors MOSFET MOSFT 20V 49A 11mOhm 7.2nC Qg log lvl
***et Europe
Trans MOSFET N-CH 20V 49A 3-Pin(3+Tab) IPAK
***S
French Electronic Distributor since 1988
***ment14 APAC
MOSFET, N, 20V, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:20V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:40mW; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Package / Case:IPAK; Power Dissipation Pd:40mW; Pulse Current Idm:200A; SMD Marking:40; Termination Type:Through Hole; Transistor Type:Power MOSFET; Turn Off Time:10ns; Turn On Time:7.8ns; Voltage Vds Typ:20V; Voltage Vgs Rds on Measurement:10V
型号 制造商 描述 库存 价格
IRLU3717PBF
DISTI # IRLU3717PBF-ND		Infineon Technologies AGMOSFET N-CH 20V 120A I-PAK
RoHS: Compliant
Min Qty: 525
Container: Tube		Limited Supply - Call
    IRLU3717PBF
    DISTI # 70017975    		Infineon Technologies AGMOSFET,N Ch.,20V,120A,4.2 MOHM,21 NC QG,I-PAK,Pb-Free
    RoHS: Compliant    		0
    • 1:$0.8600
    IRLU3717PBF
    DISTI # 942-IRLU3717PBF    		Infineon Technologies AGMOSFET MOSFT 20V 120A 21nC 4.2mOhm Qg log lvl
    RoHS: Compliant    		0
      IRLU3717PBFInternational Rectifier 360
        IRLU3717PBFInternational Rectifier 
        RoHS: Compliant        		Europe - 1050
          IRLU3717PBF
          DISTI # 8660310          		Infineon Technologies AGMOSFET, N, 20V, 120A, I-PAK
          RoHS: Compliant          		0
          • 10000:$1.0300
          • 5000:$1.1000
          • 2500:$1.1400
          • 1000:$1.2300
          • 500:$1.3800
          • 100:$1.5500
          • 10:$1.9100
          • 1:$2.3200
          图片 型号 描述
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          IRLU3714ZPBF

          Mfr.#: IRLU3714ZPBF

          OMO.#: OMO-IRLU3714ZPBF

          		 MOSFET MOSFT 20V 37A 15mOhm 4.7nC Qg log lvl
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          Mfr.#: IRLU3303PBF

          OMO.#: OMO-IRLU3303PBF

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          IRLU3715PBF

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          IRLU3715Z

          Mfr.#: IRLU3715Z

          OMO.#: OMO-IRLU3715Z-1190

          		 全新原装
          IRLU3714TR

          Mfr.#: IRLU3714TR

          OMO.#: OMO-IRLU3714TR-VISHAY

          		 MOSFET N-CH 20V 36A I-PAK
          IRLU3714Z

          Mfr.#: IRLU3714Z

          OMO.#: OMO-IRLU3714Z-INFINEON-TECHNOLOGIES

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          IRLU3715

          Mfr.#: IRLU3715

          OMO.#: OMO-IRLU3715-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 20V 54A I-PAK
          IRLU3114ZPBF

          Mfr.#: IRLU3114ZPBF

          OMO.#: OMO-IRLU3114ZPBF-INFINEON-TECHNOLOGIES

          		 IGBT Transistors MOSFET MOSFT 40V 130A 4.9mOhm 40nC Log Lvl
          可用性
          库存:
          Available
          订购:
          5000
          输入数量:
          IRLU3717PBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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