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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.
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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| NE3515S02-A DISTI # NE3515S02-A-ND | California Eastern Laboratories (CEL) | FET RF HFET 12GHZ 2V 10MA S02 RoHS: Compliant Min Qty: 70 Container: Bulk | Limited Supply - Call | |
| NE3515S02-T1C-A DISTI # NE3515S02-T1C-ATR-ND | California Eastern Laboratories (CEL) | FET RF HFET 12GHZ 2V 10MA S02 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| NE3515S02-T1C-A DISTI # NE3515S02-T1C-ACT-ND | California Eastern Laboratories (CEL) | FET RF HFET 12GHZ 2V 10MA S02 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| NE3515S02-T1C-A DISTI # NE3515S02-T1C-ADKR-ND | California Eastern Laboratories (CEL) | FET RF HFET 12GHZ 2V 10MA S02 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| NE3515S02-T1D-A DISTI # NE3515S02-T1D-A-ND | California Eastern Laboratories (CEL) | FET RF HFET 12GHZ 2V 10MA S02 RoHS: Compliant Min Qty: 1 Container: Tape & Reel (TR) | Limited Supply - Call | |
| NE3515S02-T1D-A DISTI # NE3515S02-T1D-A | Renesas Electronics Corporation | HJ-FET N-Channel 4V Surface Mount T/R - Bulk (Alt: NE3515S02-T1D-A) Min Qty: 500 Container: Bulk | Americas - 0 |
|
| NE3515S02-T1C-A DISTI # 551-NE3515S02-T1C-A | California Eastern Laboratories (CEL) | RF JFET Transistors Super Low Noise Pseudomorphic RoHS: Compliant | 0 | |
| NE3515S02-A DISTI # 551-NE3515S02-A | California Eastern Laboratories (CEL) | RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH RoHS: Compliant | 0 | |
| NE3515S02-T1D-A DISTI # 551-NE3515S02-T1D-A | California Eastern Laboratories (CEL) | RF JFET Transistors Super Low Noise Pseudomorphic RoHS: Compliant | 0 | |
| NE3515S02-T1C-A | Renesas Electronics Corporation | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET RoHS: Compliant | 1436 |
|
| NE3515S02-T1D-A | Renesas Electronics Corporation | RoHS: Not Compliant | 1167700 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: NE3515S02-T1D-A OMO.#: OMO-NE3515S02-T1D-A |
RF JFET Transistors Super Low Noise Pseudomorphic |
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Mfr.#: NE3515S02-T1D-A OMO.#: OMO-NE3515S02-T1D-A-CEL |
RF JFET Transistors Super Low Noise Pseudomorphic |
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Mfr.#: NE3514S02-T1D-A OMO.#: OMO-NE3514S02-T1D-A-318 |
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |
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Mfr.#: NE350184C-T1-A OMO.#: OMO-NE350184C-T1-A-1190 |
全新原装 |
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Mfr.#: NE3503M04-T1-A OMO.#: OMO-NE3503M04-T1-A-1190 |
全新原装 |
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Mfr.#: NE3503M04-T2 OMO.#: OMO-NE3503M04-T2-1190 |
全新原装 |
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Mfr.#: NE3503M04-T2 , ELM99501A |
全新原装 |
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Mfr.#: NE3509M04-T2-A/80 OMO.#: OMO-NE3509M04-T2-A-80-1190 |
全新原装 |
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Mfr.#: NE3512S02-T1B OMO.#: OMO-NE3512S02-T1B-1190 |
全新原装 |
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Mfr.#: NE358P OMO.#: OMO-NE358P-1190 |
全新原装 |