OMO ElectronicOMO Electronic
Expand menu
您好，登录我的帐户
0 购物车

FCD380N60E

FCD380N60E
Mfr. #:
FCD380N60E
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET 600V N-Channel MOSFET
生命周期:
制造商新产品。
数据表:
FCD380N60E 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-252-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
650 V
Id - 连续漏极电流：
10.2 A
Rds On - 漏源电阻：
380 mOhms
Vgs th - 栅源阈值电压：
3.5 V
Vgs - 栅源电压：
30 V
Qg - 门电荷：
34 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
106 W
配置：
单身的
商品名：
超级场效应晶体管 II
打包：
卷轴
高度：
2.39 mm
长度：
6.73 mm
产品：
MOSFET
系列：
FCD380N60E
晶体管类型：
1 N-Channel
宽度：
6.22 mm
品牌：
安森美半导体/飞兆半导体
正向跨导 - 最小值：
10 S
秋季时间：
10 ns
产品类别：
MOSFET
上升时间：
9 ns
出厂包装数量：
2500
子类别：
MOSFET
典型关断延迟时间：
64 ns
典型的开启延迟时间：
17 ns
单位重量：
0.009184 oz
Tags
FCD3, FCD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK
***ure Electronics
N-Channel 600 V 380 mO Surface Mount SuperFET II Easy Drive Mosfet -TO-252
***p One Stop Global
Trans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) TO-252 T/R
***ark
SuperFET2 380mohm, TO252 - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
***et Europe
Trans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R
***Components
MOSFET N-Ch SuperFET II 600V 10.2A DPAK
***ical
Trans MOSFET N-CH 600V 10.2A T/R
***i-Key
MOSFET N CH 600V 10.2A DPAK
***et
SUPERFET2 380MOHM, TO252
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 10.2A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:106W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CA-N, 600V 10,2A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:10.2A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.32ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:106W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
型号 制造商 描述 库存 价格
FCD380N60E
DISTI # V72:2272_06337701		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R2500
  • 1000:$0.8777
  • 500:$1.0141
  • 250:$1.1024
  • 100:$1.2248
  • 25:$1.5097
  • 10:$1.5301
  • 1:$1.9742
FCD380N60E
DISTI # V36:1790_06337701		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R0
  • 2500:$0.8567
FCD380N60E
DISTI # FCD380N60ECT-ND		ON SemiconductorMOSFET N CH 600V 10.2A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3735In Stock
  • 1000:$0.9660
  • 500:$1.1659
  • 100:$1.4190
  • 10:$1.7650
  • 1:$1.9700
FCD380N60E
DISTI # FCD380N60EDKR-ND		ON SemiconductorMOSFET N CH 600V 10.2A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3735In Stock
  • 1000:$0.9660
  • 500:$1.1659
  • 100:$1.4190
  • 10:$1.7650
  • 1:$1.9700
FCD380N60E
DISTI # FCD380N60ETR-ND		ON SemiconductorMOSFET N CH 600V 10.2A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 5000:$0.8408
  • 2500:$0.8732
FCD380N60E
DISTI # 32702549		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R2500
  • 9:$1.9742
FCD380N60E
DISTI # 32711099		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$0.8219
FCD380N60E
DISTI # FCD380N60E		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R (Alt: FCD380N60E)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.7139
  • 15000:€0.7649
  • 10000:€0.8239
  • 5000:€0.8919
  • 2500:€1.0709
FCD380N60E
DISTI # FCD380N60E		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R - Tape and Reel (Alt: FCD380N60E)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.7599
  • 15000:$0.7789
  • 10000:$0.7889
  • 5000:$0.7999
  • 2500:$0.8049
FCD380N60E
DISTI # FCD380N60E		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R (Alt: FCD380N60E)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 125000:$1.0098
  • 62500:$1.0267
  • 25000:$1.0621
  • 12500:$1.1000
  • 7500:$1.1407
  • 5000:$1.1846
  • 2500:$1.2320
FCD380N60E
DISTI # 46AC0750		ON SemiconductorMOSFET, N-CH, 600V, 10.2A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes2057
  • 1000:$1.0500
  • 500:$1.2400
  • 250:$1.3200
  • 100:$1.3900
  • 50:$1.4900
  • 25:$1.6000
  • 10:$1.7000
  • 1:$1.9800
FCD380N60E
DISTI # 63W2839		ON SemiconductorSF2 600V 380MOHM E DPAK / REEL0
  • 25000:$0.6730
  • 10000:$0.6930
  • 2500:$0.7190
  • 1:$0.7250
FCD380N60E
DISTI # 512-FCD380N60E		ON SemiconductorMOSFET 600V N-Channel MOSFET
RoHS: Compliant		2416
  • 1:$1.8100
  • 10:$1.5400
  • 100:$1.2300
  • 500:$1.0700
  • 1000:$0.8930
  • 2500:$0.8800
FCD380N60EFairchild Semiconductor Corporation 828
    FCD380N60EFairchild Semiconductor CorporationPower Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Compliant    		1998
      FCD380N60E
      DISTI # 2825202      		ON SemiconductorMOSFET, N-CH, 600V, 10.2A, TO-252-3
      RoHS: Compliant      		2057
      • 5000:$1.1700
      • 1000:$1.2100
      • 500:$1.3100
      • 250:$1.5900
      • 100:$1.9400
      • 25:$2.8400
      • 5:$3.3100
      FCD380N60E
      DISTI # 2825202      		ON SemiconductorMOSFET, N-CH, 600V, 10.2A, TO-252-34577
      • 500:£0.8240
      • 250:£0.8840
      • 100:£0.9440
      • 10:£1.2200
      • 1:£1.5900
      图片 型号 描述
      DP83TC811SWRNDRQ1

      Mfr.#: DP83TC811SWRNDRQ1

      OMO.#: OMO-DP83TC811SWRNDRQ1

      		 Ethernet ICs AUTO ETHERNET PHY
      NTB082N65S3F

      Mfr.#: NTB082N65S3F

      OMO.#: OMO-NTB082N65S3F

      		 MOSFET SUPERFET3 650V D2PAK PKG
      NCP1562ADBR2G

      Mfr.#: NCP1562ADBR2G

      OMO.#: OMO-NCP1562ADBR2G

      		 Switching Controllers HI PERF RESET PWM CONTLR
      TLV62568ADRLR

      Mfr.#: TLV62568ADRLR

      OMO.#: OMO-TLV62568ADRLR

      		 Switching Voltage Regulators 1-A BUCK CONVERTER W FORCED PWM NO PWRGD
      TPS7A3901DSCT

      Mfr.#: TPS7A3901DSCT

      OMO.#: OMO-TPS7A3901DSCT

      		 LDO Voltage Regulators Dual,150mA,Wide-Vin +/-(LDO) Vreg
      INA226AQDGSRQ1

      Mfr.#: INA226AQDGSRQ1

      OMO.#: OMO-INA226AQDGSRQ1

      		 Current & Power Monitors & Regulators AEC-Q100, 36V, Bi-Directional, High Accuracy, Low-/High-Side, I2C Out Current/Power Monitor w/Alert 10-VSSOP -40 to 125
      4946

      Mfr.#: 4946

      OMO.#: OMO-4946

      		 Standoffs & Spacers M/F NYLON STANDOFF 4-40 1.00 L
      INA226AQDGSRQ1

      Mfr.#: INA226AQDGSRQ1

      OMO.#: OMO-INA226AQDGSRQ1-TEXAS-INSTRUMENTS

      		 Current & Power Monitors & Regulators Hi-Side Msmt Bi-Dir Current/Pwr Mon
      DP83TC811SWRNDRQ1

      Mfr.#: DP83TC811SWRNDRQ1

      OMO.#: OMO-DP83TC811SWRNDRQ1-TEXAS-INSTRUMENTS

      		 Low Power Automotive PHY
      NTB082N65S3F

      Mfr.#: NTB082N65S3F

      OMO.#: OMO-NTB082N65S3F-ON-SEMICONDUCTOR

      		 SUPERFET3 650V D2PAK PKG
      可用性
      库存:
      Available
      订购:
      1985
      输入数量:
      FCD380N60E的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$1.81
      US$1.81
      10
      US$1.54
      US$15.40
      100
      US$1.23
      US$123.00
      500
      US$1.07
      US$535.00
      1000
      US$0.89
      US$893.00
      由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
      从...开始
      最新产品
      • Gate Drivers
        Gate Drivers
        The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
      • NCP137 700 mA LDO Regulators
        NCP137 700 mA LDO Regulators
        ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
      • NCP114 Low Dropout Regulators
        NCP114 Low Dropout Regulators
        ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
      • LC717A00AR Touch Sensor
        LC717A00AR Touch Sensor
        These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
      • Compare FCD380N60E
        Compare FCD380N60E
        FCD3400N80Z vs FCD360N65S3R0 vs FCD380N60E
      • FDMQ86530L Quad-MOSFET
        FDMQ86530L Quad-MOSFET
        ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
      More Newest Products
      Top